Zobrazeno 1 - 10
of 392
pro vyhledávání: '"D. Guggi"'
Publikováno v:
Thin Solid Films. 368:15-21
Epitaxial, textured Ru 2 Si 3 films were grown by the template technique, a special molecular beam epitaxy method, on Si(111) and Si(001). Epitaxial relationships of the films with respect to the substrate were determined by X-ray diffraction. Two co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::01c62a2a4a635b6499a8ad91293d0fe3
https://doi.org/10.1016/s0040-6090(00)00737-9
https://doi.org/10.1016/s0040-6090(00)00737-9
Publikováno v:
Microelectronic Engineering. 50:243-248
Recent band structure calculations indicate, that ruthenium silicide (Ru2Si3) is semiconducting with a direct band gap. Electrical measurements lead to a band gap around 0.8 eV which is technologically important for fiber communications. This makes R
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cfbb99508374c164955281233d9d0809
https://doi.org/10.1016/s0167-9317(99)00288-9
https://doi.org/10.1016/s0167-9317(99)00288-9
Publikováno v:
Journal of Luminescence. 80:461-465
Recent band structure calculations indicate that ruthenium silicide (Ru 2 Si 3 ) is semiconducting with a direct band gap. Electrical measurements lead to a band gap around 0.8 eV which is technologically important for fiber communications. This make
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a0c3d9b9d9af1bd17c083c886bf56982
https://doi.org/10.1016/s0022-2313(98)00148-3
https://doi.org/10.1016/s0022-2313(98)00148-3
Autor:
S. Mesters, S. Mantl, W. Michelsen, Bernd Kabius, Bernhard Holländer, M. Hacke, D. Guggi, U. Tisch
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. :324-327
Single crystalline metal/silicon heterostructures, such as CoSi 2 on Si (100), are promising materials for microelectronic and optoelectronic applications. The crystalline perfection of epitaxial CoSi 2 /Si (100) heterostructures is limited by the la
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b3f449f98db8a89af6f3706b48dce1c0
https://doi.org/10.1016/s0168-583x(96)00949-4
https://doi.org/10.1016/s0168-583x(96)00949-4
Publikováno v:
Journal of Applied Physics. 81:3069-3072
Large-area (001) oriented epitaxial CeO2 films with extremely high crystalline perfection characterized by x-ray diffraction rocking curves of the (002) CeO2 reflection with a full width at half maximum (FWHM) Δω⩽0.013° and thickness dependent o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::095b8a9918e7c826b7cc14c8d491d8d1
https://doi.org/10.1063/1.364342
https://doi.org/10.1063/1.364342
Publikováno v:
Journal of Crystal Growth. 145:440-446
The carbon doping behavior of trimethylarsenic (TMAs) in low-pressure metalorganic vapor phase epitaxy (LP-MOVPE) of GaAs was studied in the temperature range of 550 to 700°C and at various trimethylarsenic/trimethylgallium (TMAs/TMGa) ratios using
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6eb772800d4403f5e318103ec609cbe2
https://doi.org/10.1016/0022-0248(94)91089-8
https://doi.org/10.1016/0022-0248(94)91089-8
Autor:
Dieter Weller, Burkard Hillebrands, Gernot Güntherodt, C. H. Lee, J. V. Harzer, I. S. Pogosova, R. F. C. Farrow, D. Guggi
Publikováno v:
Journal of Applied Physics. 76:908-913
We report on studies of the profiles of the strain field components in epitaxially grown (110)‐oriented Co/Pt superlattices with fixed Pt layer thickness (nominally 18 A) and varying Co layer thickness. The strain profiles in the growth direction a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f2dc10305453e677125d607665460c51
https://doi.org/10.1063/1.357768
https://doi.org/10.1063/1.357768
Publikováno v:
Applied Surface Science. 73:102-107
Molecular beam allotaxy is capable of growing buried single crystalline CoSi 2 layers in Si(100). Buried layers are formed by growing first a precipitate layer embedded in epitaxial Si by molecular beam epitaxy and by subsequent high temperature anne
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::072b11faa186931f90e94d346e7d8b72
https://doi.org/10.1016/0169-4332(93)90152-2
https://doi.org/10.1016/0169-4332(93)90152-2
Publikováno v:
IEEE Transactions on Applied Superconductivity. 3:2197-2200
The authors have deposited Nb/Al-AlO/sub x//Nb multilayers on Si substrates by DC and RF magnetron sputtering. To assist the fabrication of stacked tunnel junctions they investigated the layers by transmission electron microscopy and anodization spec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d9dc079d4bbdc2cf0a0fca2956ed5cc2
https://doi.org/10.1109/77.233939
https://doi.org/10.1109/77.233939
Publikováno v:
Journal of Applied Physics. 71:5560-5564
Thin epitaxial films of monoclinic pure and cubic yttria‐stabilized (YSZ) ZrO2 were deposited onto Si(100) by electron‐beam evaporation. The degree of crystalline perfection was controlled by the growth temperature. Epitaxial YBa2Cu3O7−x films
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::123569b984ba603ce5de0c05cfffd0a6
https://doi.org/10.1063/1.350532
https://doi.org/10.1063/1.350532