Zobrazeno 1 - 10
of 66
pro vyhledávání: '"D. Gryglewski"'
Publikováno v:
2020 23rd International Microwave and Radar Conference (MIKON).
In the paper RF performances and thermal features of GaN HEMTs grown on Si substrate for the design of microwave high-power amplifiers have been briefly presented referring also to the state of the art of the dominant GaN-on-SiC HEMT technology. As G
Autor:
M. Góralczyk, D. Gryglewski
Publikováno v:
ELEKTRONIKA - KONSTRUKCJE, TECHNOLOGIE, ZASTOSOWANIA. 1:22-25
Publikováno v:
Micromachines
Micromachines, Vol 11, Iss 398, p 398 (2020)
Volume 11
Issue 4
Micromachines, Vol 11, Iss 398, p 398 (2020)
Volume 11
Issue 4
Power amplifiers applied in modern active electronically scanned array (AESA) radars and 5G radios should have similar features, especially in terms of phase distortion, which dramatically affects the spectral regrowth and, moreover, they are difficu
Publikováno v:
2018 22nd International Microwave and Radar Conference (MIKON).
The paper presents the test results of transmittance deviation during pulses of GaN HEMT and GaAs MESFET power amplifiers designed for T/R modules of Active Electronically Scanned Array (AESA). The study is based on pulsed measurements of transmittan
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Publikováno v:
2016 21st International Conference on Microwave, Radar and Wireless Communications (MIKON).
This paper is related to the project of an ultrawideband radio receiver operating between 1 and 6 GHz with instantaneous bandwidth of 500 MHz. A single frequency conversion (0-IF) architecture is based on analog I/Q demodulator (ADL5380) and two chan
Publikováno v:
2016 21st International Conference on Microwave, Radar and Wireless Communications (MIKON).
The paper presents the results of a project leading to design and fabrication of a transmitting-receiving module destined for application in an active electronically scanned array (AESA). The module is supposed to operate in the band from 9 GHz to 10
Autor:
Marcin Goralczyk, D. Gryglewski
Publikováno v:
2016 21st International Conference on Microwave, Radar and Wireless Communications (MIKON).
Under PolHEMT project focused on AlGaN/GaN HEMT on truly bulk semi-insulating GaN substrate technology development a power amplifier using this type of polish transistor was designed and fabricated. The amplifier achieves the parameters as follow: ou
Publikováno v:
International Journal of Electronics and Telecommunications. 57:121-126
A Computer-controlled System of High-power Microwave Sources The paper presents the design and hardware implementation of a computer controlled system composed of up to four high-power microwave sources. Each source provides up to 200 W of continuous
Autor:
Wojciech Wojtasiak, D. Gryglewski
Publikováno v:
International Journal of Electronics and Telecommunications. 57:135-140
A 100 W SiC MESFET Amplifier for L-band T/R Module of APAR In the paper, a 100W SiC MESFET amplifier design dedicated for a L-band T/R module of APAR is presented. The output power higher than 100 W has been achieved by combining in a balanced config