Zobrazeno 1 - 10
of 16
pro vyhledávání: '"D. Greentree, Andrew"'
Autor:
Li, Shuo, Shinichiro, Sato, A. Shimpson, David, Takeshi, Ohshima, D. Greentree, Andrew, C. Gibson, Brant
Nanoscale pillars are important for tailoring optical emission from nanoscale emitters. Here we consider nano pillar geometries designed to enhance photon extraction efficiency from quantum photons sources such as lanthanoid-doped gallium nitride and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=jairo_______::9d6aa5f14569b4205f0e7a68f22570b3
https://repo.qst.go.jp/records/86556
https://repo.qst.go.jp/records/86556
Autor:
Raman Nair, Sarath, J. Rogers, Lachlan, Vidal, Xavier, P. Roberts, Reece, Hiroshi, Abe, Takeshi, Ohshima, Takashi Yatsui, D. Greentree, Andrew, Jeske, Jan, Volz, Thomas
Publikováno v:
Nanophotonics. 9(15):4505-4518
Laser threshold magnetometry using the negatively charged nitrogen-vacancy (NV−) centre in diamond as a gain medium has been proposed as a technique to dramatically enhance the sensitivity of room-temperature magnetometry. We experimentally explore
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=jairo_______::976e9e3606c2b3e088ef6d01e32c7504
https://repo.qst.go.jp/records/81739
https://repo.qst.go.jp/records/81739
Autor:
Guarino, Vincenzo, Iriczalli, Cruz-Maya, Reineck, Philipp, Abe, Hiroshi, Ohshima, Takeshi, Fox, Kate, D. Greentree, Andrew, C. Gibson, Brant, Ambrosio, Luigi, Hiroshi, Abe, Takeshi, Ohshima
Publikováno v:
ACS Applied Nano Materials. 3(11):10814-10822
Fluorescent nanodiamonds (fNDs) are emerging as important tools for imaging and sensing in biology, which enable the optical detection, for example, of temperature and magnetic fields at the nanoscale. At the same time, their unique physicochemical p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=jairo_______::020227da1206eb490c1a29a344ecc102
https://repo.qst.go.jp/records/81565
https://repo.qst.go.jp/records/81565
Autor:
Sato, Shinichiro, Deki, Manato, Watanabe, Hirotaka, Nitta, Shugo, Honda, Yoshio, Nishimura, Tomoaki, C. Gibson, Brant, D. Greentree, Andrew, Amano, Hiroshi, Ohshima, Takeshi
Publikováno v:
Optical Materials Express. 10(10):2614-2623
Wide bandgap semiconductors are increasingly important for bioimaging applications, as they can possess good biocompatibility and host a large range of fluorescent defects spanning the visible to infrared. Gallium nitride is one promising host for ph
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=jairo_______::e6c60a6356b3a6e015b404014ccc809b
https://repo.qst.go.jp/records/80535
https://repo.qst.go.jp/records/80535
Autor:
Sato, Shinichiro, Narahara, Takuma, Onoda, Shinobu, Yamazaki, Yuichi, Hijikata, Yasuto, C. Gibson, Brant, D. Greentree, Andrew, Ohshima, Takeshi
Publikováno v:
Materials Science Forum. 1004:355-360
This paper reports optical properties of negatively charged NcVsi- centers in silicon carbide (a nitrogen substituting for a carbon atom adjacent to a silicon vacancy) whose emission wavelength is 1100-1500 nm at room temperature. High-purity semi-in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=jairo_______::1f9eba3654633fd51bda08083d04678f
https://repo.qst.go.jp/records/80477
https://repo.qst.go.jp/records/80477
固体結晶中の点欠陥や不純物元素におけるスピン共鳴や発光を利用して周辺の温度、磁場、電場などを計測する手法は「量子センシング」とよばれ、ナノスケールの空間を高感度に計測
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=jairo_______::53ef1179003926fbd12dec3cd5e12cd3
https://repo.qst.go.jp/records/83300
https://repo.qst.go.jp/records/83300
窒化ガリウム(GaN)にドープされた希土類イオンは、熱クエンチングが少なく、室温でも狭い線幅で極めて安定した可視～近赤外の発光を示す。GaNは微細加工や電子デバイス作製技術が成
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=jairo_______::77e9b0ad1f4935ef41df1e6f42dd7c1a
https://repo.qst.go.jp/records/81351
https://repo.qst.go.jp/records/81351
Autor:
Sato, Shinichiro, Li, Shuo, Deki, Manato, Nishimura, Tomoaki, Watanabe, Hirotaka, Nitta, Shugo, Honda, Yoshio, C. Gibson, Brant, D. Greentree, Andrew, Amano, Hiroshi, Ohshima, Takeshi, Shinichiro, Sato, Takeshi, Ohshima
We fabricated circular- and square-shaped pillar arrays with sizes ranging from 100 nm to 2 µm on Pr-implanted GaN epilayers using electron beam lithography, metal deposition, and dry etching techniques. The implantation energy and dose were 100 keV
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=jairo_______::33bd06b4f565f89519bd24e77a0d9ea3
https://repo.qst.go.jp/records/81349
https://repo.qst.go.jp/records/81349
窒化ガリウム半導体(GaN)中の孤立したランタノイドは、室温でも狭い線幅で高輝度の発光を示すことから、単一光子源への応用が期待できる。Prイオン注入したGaN上に様々なサイズのナノ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=jairo_______::fcca963bf1abea3e41cd63b1788f23b8
https://repo.qst.go.jp/records/81607
https://repo.qst.go.jp/records/81607
Autor:
Sato, Shinichiro, Narahara, Takuma, Higuchi, Taisei, Onoda, Shinobu, Yamazaki, Yuichi, Hijikata, Yasuto, C. Gibson, Brant, D. Greentree, Andrew, Ohshima, Takeshi
Recently, NCVSi- centers in silicon carbide (SiC), i.e. negatively-charged pairs of silicon vacancy (VSi) and nitrogen (N) atom on an adjacent carbon (C) site, have attracted attention as they are an optically active defect with an electronic structu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=jairo_______::c51c359dd1861054cb9772ad1e7713da
https://repo.qst.go.jp/records/78101
https://repo.qst.go.jp/records/78101