Zobrazeno 1 - 10
of 43
pro vyhledávání: '"D. Gotthold"'
Autor:
Austin M. Adkins, Zachary N. M. Luyo, Alayna J. Gibbs, Alea F. Boden, Riley S. Heerbrandt, Justin D. Gotthold, Richard A. Britten, Laurie L. Wellman, Larry D. Sanford
Publikováno v:
Life, Vol 14, Iss 5, p 636 (2024)
The proposed Mars missions will expose astronauts to long durations of social isolation (SI) and space radiation (SR). These stressors have been shown to alter the brain’s macrostructure and microenvironment, including the blood–brain barrier (BB
Externí odkaz:
https://doaj.org/article/8c1eb061cbca4d91b0e433fcb5310e4e
Autor:
Larry D. Sanford, Austin M. Adkins, Alea F. Boden, Justin D. Gotthold, Ryan D. Harris, Dorela Shuboni-Mulligan, Laurie L. Wellman, Richard A. Britten
Publikováno v:
Life, Vol 13, Iss 4, p 1002 (2023)
Sleep problems in astronauts can arise from mission demands and stress and can impact both their health and ability to accomplish mission objectives. In addition to mission-related physical and psychological stressors, the long durations of the propo
Externí odkaz:
https://doaj.org/article/e10f3105dde04cd887ab12ff91c0e595
Autor:
Austin M. Adkins, Emily M. Colby, Alea F. Boden, Justin D. Gotthold, Ryan D. Harris, Richard A. Britten, Laurie L. Wellman, Larry D. Sanford
Publikováno v:
Life, Vol 13, Iss 3, p 826 (2023)
Future missions to Mars will expose astronauts to several physical and psychological challenges, including exposure to space radiation (SR) and periods of social isolation (SI). Each of these stressors, in addition to mission demands, can affect phys
Externí odkaz:
https://doaj.org/article/948e16ff187b44f49de54f3f35da706b
Autor:
Yu. Makarov, Lev Kadinski, B. Albert, A.V. Lobanova, K.M. Mazaev, D. Gotthold, A.O. Galyukov, B. Peres, E.V. Yakovlev, Roman Talalaev
Publikováno v:
Journal of Crystal Growth. 266:354-362
A comprehensive analysis is made of III-nitride epitaxial growth to reveal possible effect of operating conditions on the flow pattern and growth rate uniformity in vertical high-speed rotating disk reactors. A number of three-dimensional computation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::88c7a32b5dd52af83b07d5300dea314e
https://doi.org/10.1016/j.jcrysgro.2004.02.066
https://doi.org/10.1016/j.jcrysgro.2004.02.066
Autor:
A.O. Galyukov, Yu.N. Makarov, E.V. Yakovlev, K.M. Mazaev, Roman Talalaev, Lev Kadinski, B. Albert, B. Peres, D. Gotthold, A.V. Lobanova
Publikováno v:
Journal of Crystal Growth. 261:190-196
A combined modeling and experimental analysis of GaN/AlGaN deposition in the commercial vertical high-speed rotating-disk reactors produced by EMCORE is performed with reference to the optimization of the growth rate and layer composition uniformity.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e12aa6d8db74400ad2794426f7045e4a
https://doi.org/10.1016/j.jcrysgro.2003.11.011
https://doi.org/10.1016/j.jcrysgro.2003.11.011
Autor:
Robert C. Fitch, T.J. Jenkins, James K. Gillespie, Fan Ren, B. Luo, Neil Moser, Brent P. Gila, Glen D. Via, D. Gotthold, Steve Pearton, Gregg H. Jessen, R. Mehandru, A. H. Onstine, M.J. Yannuzi, R. Birkhahn, C. R. Abernathy, Antonio Crespo, Jihyun Kim, B. Peres
Publikováno v:
Solid-State Electronics. 47:1781-1786
The dc and power characteristics of AlGaN/GaN MOS-HEMTs with Sc2O3 gate dielectrics were compared with that of conventional metal-gate HEMTs fabricated on the same material. The MOS-HEMT shows higher saturated drain–source current (∼0.75 A/mm) an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c89c2fbac16bf1e3f23265e9029f250
https://doi.org/10.1016/s0038-1101(03)00138-2
https://doi.org/10.1016/s0038-1101(03)00138-2
Publikováno v:
Journal of Applied Physics. 93:5824-5826
Phonon modes of GaN/AlN heterojunction field-effect transistor (HFET) structures were investigated using Fourier-transform infrared spectroscopy. The HFET structure was grown on Si(111) substrate with AlN-based buffer layers. The phonon modes were al
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::791158d61a46ab8cd0dfafc16473ec10
https://doi.org/10.1063/1.1561583
https://doi.org/10.1063/1.1561583
Autor:
Vinit Kumar, R. Schwindt, D. Gotthold, B. Albert, Jong-Wook Lee, Ilesanmi Adesida, R. Birkhahn, S. Guo, A. Kuliev
Publikováno v:
Electronics Letters. 40:80
High-performance, low-noise AlGaN/GaN high electron mobility transistors (HEMTs) with 0.25 µm gate-length have been fabricated on semi-insulating 6H‐SiC substrates. The devices exhibited a unity current gain cutoff frequency (fT) of 52.3 GHz, and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e1b7524b1b6775bcdaefb70ee67f35dc
https://doi.org/10.1049/el:20040012
https://doi.org/10.1049/el:20040012
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Autor:
O. Aktas, Vinit Kumar, Ilesanmi Adesida, D. Gotthold, A. Kuliev, R. Birkhahn, B. Albert, R. Schwindt, Jong-Wook Lee, S. Guo
Publikováno v:
Electronics Letters. 39:1609
MOCVD-grown 0.25 µm gate-length AlGaN/GaN high electron mobility transistors (HEMTs) have been fabricated on 6H-SiC substrates. These 0.25 µm gate-length devices exhibited maximum drain current density as high as 1.28 A/mm, peak extrinsic transcond
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::194860f8623254709cb91620620a62fd
https://doi.org/10.1049/el:20030985
https://doi.org/10.1049/el:20030985