Zobrazeno 1 - 10
of 594
pro vyhledávání: '"D. Gollub"'
Autor:
Fekih-Romdhane, Feten1,2 (AUTHOR) feten.fekih@gmail.com, Kerbage, Georges3 (AUTHOR), Hachem, Nagham4 (AUTHOR), El Murr, Michelle4 (AUTHOR), Haddad, Georges3,5 (AUTHOR), Loch, Alexandre Andrade6,7 (AUTHOR), Abou Khalil, Rony4 (AUTHOR), El Hayek, Elissar4 (AUTHOR), Hallit, Souheil3,8,9 (AUTHOR) souheilhallit@usek.edu.lb
Publikováno v:
BMC Psychiatry. 11/20/2024, Vol. 24 Issue 1, p1-11. 11p.
Publikováno v:
physica status solidi (a). 202:1255-1262
Photoreflectance (PR) spectroscopy has been applied to study of step-like GaInNAs/GaInNAs/GaAs double quantum well (DQW) structures grown by molecular beam epitaxy. PR features related to optical transitions in the active part of the step-like QW str
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::700975344dbe73f60cde6108709f7c27
https://doi.org/10.1002/pssa.200460911
https://doi.org/10.1002/pssa.200460911
Publikováno v:
Microelectronics Journal. 36:446-449
Step-like GaInNAs/Ga(In)NAs/GaAs double quantum well (DQW) structures tailored at 1.3 μm have been studied in photoreflectance (PR) and contactless electroreflectance (CER) spectroscopies. Spectral features related to absorption in the active part o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c3b6b2605fac816c7b32ec50aa216b93
https://doi.org/10.1016/j.mejo.2005.02.043
https://doi.org/10.1016/j.mejo.2005.02.043
Publikováno v:
IEE Proceedings - Optoelectronics. 151:313-316
GaInNAs-based quantum well (QW) structures tailored at 1.55 μm are investigated by photoreflectance (PR) and photoluminescence (PL) spectroscopies. The PL intensity and the energy level structure are compared for two types of QWs: GaInNAs/GaAs singl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c2bd82951068696ee400e25ae58238d
https://doi.org/10.1049/ip-opt:20040931
https://doi.org/10.1049/ip-opt:20040931
Publikováno v:
IEEE Journal of Quantum Electronics. 40:337-342
We have investigated GaInNAs-GaAsN multiquantum-well (MQW) lasers with two-QW (DQW), three-QW (TQW), and five-QW (5QW) active regions and emission in the 1.3-/spl mu/m range. A solid-source molecular beam epitaxy system has been used to grow the stru
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5392adcac99186c490d67612383d014f
https://doi.org/10.1109/jqe.2004.825112
https://doi.org/10.1109/jqe.2004.825112
Autor:
D. Gollub, Jordi Ibáñez, Amalia Patanè, R. J. Airey, Mark Hopkinson, Laurence Eaves, J. Endicott, Alfred Forchel, G. Hill, M. Bissiri
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 21:892-896
We use a combination of magneto-tunnelling and photoluminescence spectroscopy techniques to explore the admixing of the extended GaAs conduction band states with the localised N-impurity states in dilute GaAs 1 - y N y quantum wells (QWs) incorporate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fea8a5ce87ce4639a69202c929999915
https://doi.org/10.1016/j.physe.2003.11.145
https://doi.org/10.1016/j.physe.2003.11.145
Publikováno v:
Journal of Crystal Growth. 251:353-359
We have investigated GaInAsN/GaAsN/AlGaAs quantum well lasers with emission wavelengths ranging from 1.3 to 1.5 μm grown by solid source molecular beam epitaxy using a radio-frequency source for nitrogen. P-doping is realized by carbon. In order to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c3d2b7c59c66b5bef6f557816203f1eb
https://doi.org/10.1016/s0022-0248(02)02435-1
https://doi.org/10.1016/s0022-0248(02)02435-1
Autor:
Alfred Forchel, Mario Capizzi, G. Baldassarri Höger von Högersthal, Massimo Bersani, M. Barozzi, Michael Fischer, Antonio Polimeni, D. Gollub, Damiano Giubertoni, M. Bissiri
Publikováno v:
Solid-State Electronics. 47:447-453
We report on the effects of N incorporation on the electronic properties of (InGa)(AsN)/GaAs heterostructures as investigated by photoluminescence (PL) spectroscopy. PL under a magnetic field shows an increase in the electron effective mass in the N-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::55800e261b8f88b52db93b68cee76a4e
https://doi.org/10.1016/s0038-1101(02)00387-8
https://doi.org/10.1016/s0038-1101(02)00387-8
Publikováno v:
IEEE Photonics Technology Letters. 17:2247-2249
We present results of tunable GaInNAs lasers with photonic crystal (PhQ mirrors, fabricated from GaAs-AlGaAs layers with a double GaInNAs quantum well emitting at IR wavelength. The devices are realized as ridge waveguide lasers with two coupled segm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fd31857b12aaa020fad5185f194f59fc
https://doi.org/10.1109/lpt.2005.857989
https://doi.org/10.1109/lpt.2005.857989
Publikováno v:
Applied Physics Letters. 84:203-205
We have studied the morphology and the composition of highly strained InGaAs and InGaAsN quantum wells (QWs) by transmission electron microscopy. 002 dark-field images show that two symmetrical interfacial layers of about 1.5 nm border the QWs. The s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d5ff4bee17c86458bfc5cc0e01e282bb
https://doi.org/10.1063/1.1639510
https://doi.org/10.1063/1.1639510