Zobrazeno 1 - 10
of 26
pro vyhledávání: '"D. Gogl"'
Autor:
S. M. Alam, D. Houssameddine, F. Neumeyer, I. Rahman, M. DeHerrera, S. Ikegawa, P. Sanchez, X. Zhang, Y. Wang, J. Williams, D. Gogl, H. Xu, M. Farook, D. Aceves, H. K. Lee, F. B. Mancoff, M. Chou, CH. Tan, B. Huang, S. Mukherjee, M. Lu, A. Shah, K. Nagel, Y. Kim, S. Aggarwal
Publikováno v:
2022 IEEE International Memory Workshop (IMW).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fcfa907ea5d9429cd8f6bfaf153e7f36
https://doi.org/10.1109/imw52921.2022.9779276
https://doi.org/10.1109/imw52921.2022.9779276
Autor:
Michael Kund, Heinz Hoenigschmid, L. Altimime, Ralf Symanczyk, D. Gogl, G. Mueller, Michael Markert, Corvin Liaw, S. Bournat, Stefan Dietrich, Michael Angerbauer, Milena Ivanov
Publikováno v:
IEEE Journal of Solid-State Circuits. 42:839-845
A 2-Mbit CBRAM (Conductive Bridging Random Access Memory) core has been developed utilizing a 90 nm, VDD=1.5 V process technology. The presented design uses an 8F2 (0.0648 mum2) 1T1CBJ (1-Transistor/1-Conductive Bridging Junction) cell and introduces
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::41cb722e03cf911a997612774aadb503
https://doi.org/10.1109/jssc.2007.892207
https://doi.org/10.1109/jssc.2007.892207
Autor:
E. Gow, K. Maloney, Andre Sturm, Malissa J. Wood, J. DeBrosse, W. Obermeyer, C. Barwin, William J. Gallagher, Heinz Hoenigschmid, Gerhard Mueller, A.R. Sitaram, D. Willmott, Stefan Lammers, Hans-Heinrich Viehmann, Thomas M. Maffitt, C. Arndt, D. Gogl, Mark C. H. Lamorey, Yu Lu, A. Bette
Publikováno v:
IEEE Journal of Solid-State Circuits. 40:902-908
A 16-Mb magnetic random access memory (MRAM) is demonstrated in 0.18-/spl mu/m three-Cu-level CMOS with a three-level MRAM process adder. The chip, the highest density MRAM reported to date, utilizes a 1.42/spl mu/m/sup 2/ 1-transistor 1-magnetic tun
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5038456bec413d62e3b72e9fea64a323
https://doi.org/10.1109/jssc.2004.842856
https://doi.org/10.1109/jssc.2004.842856
Autor:
Stefan Lammers, Gerhard Müller, R. P. Robertazzi, W. Obermaier, William J. Gallagher, William Robert Reohr, Hans-Heinrich Viehmann, Daniel Braun, C. Arndt, D. Gogl, J. DeBrosse, A. Bette, Heinz Hoenigschmid, R.P. Havreluk, D. Casarotto
Publikováno v:
IEEE Journal of Solid-State Circuits. 39:678-683
A 128-kb magnetic random access memory (MRAM) test chip has been fabricated utilizing, for the first time, a 0.18-/spl mu/m V/sub DD/=1.8 V logic process technology with Cu metallization. The presented design uses a 1.4-/spl mu/m/sup 2/ one-transisto
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb66c10fa56dc4f37d6218a1498ecf12
https://doi.org/10.1109/jssc.2004.825251
https://doi.org/10.1109/jssc.2004.825251
Publikováno v:
IEEE Journal of Solid-State Circuits. 35:1387-1395
A 1-Kbit high-temperature EEPROM memory module has been developed in a 1.6-/spl mu/m thin-film SIMOX technology. The memory array is based on single-poly EEPROM cells, which are erased and programmed by Fowler-Nordheim tunneling. Operation at elevate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8a1280ed1e9aba744952a3caf0c5e131
https://doi.org/10.1109/4.871314
https://doi.org/10.1109/4.871314
Autor:
X. Zhang, N. D. Rizzo, D. Gogl, Jon M. Slaughter, Thomas W. Andre, J. Janesky, Dimitri Houssameddine, Syed M. Alam, W. Meadows, Chitra K. Subramanian, H. Lin
Publikováno v:
CICC
Magnetoresistive Random Access Memory (MRAM) technology emerged from research and development into volume production within the last decade in the form of Toggle MRAM. The latest Magnetic Tunnel Junction (MTJ) based memory technology, Spin-Torque MRA
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a32cb1522c3fd4bdb06f0ca9e92e5836
https://doi.org/10.1109/cicc.2013.6658449
https://doi.org/10.1109/cicc.2013.6658449
Autor:
Heinz Hönigschmid, L. Altimime, Michael Angerbauer, D. Gogl, G. M¿ller, M. Markert, Corvin Liaw, Milena Dimitrova, S. Bournat, R. Symanczyk, S. Dietrich
Publikováno v:
2006 Symposium on VLSI Circuits, 2006. Digest of Technical Papers..
A 2Mbit CBRAM (conductive bridging random access memory) core has been developed utilizing a 90nm, VDD = 1.5V process technology. The presented design uses an 8F2 (0.0648mum2) 1T1CBJ (1-transistor/1-conductive bridging junction) cell and introduces a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f943cd3619d8db51d515b2dc0509f76c
https://doi.org/10.1109/vlsic.2006.1705334
https://doi.org/10.1109/vlsic.2006.1705334
Autor:
Rok Dittrich, A. Bette, P. Beer, G. Muller, J. Schmid, S. Bournat, L. Altimime, S. Lammers, H. Honigschmid, D. Gogl, R. Gardic
Publikováno v:
ISSCC
As MRAM technology is maturing, the need for developing a strategy to identify and replace marginal bits during read/write operation becomes necessary. The methodology and circuit techniques for read/write signal-margin screening implemented in a 0.1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2085da7cec039a61d8c853f6a218c043
https://doi.org/10.1109/isscc.2006.1696079
https://doi.org/10.1109/isscc.2006.1696079
Publikováno v:
IEEE Electron Device Letters. 18:541-543
A thin-film SIMOX technology has been used for fabrication of a single-polysilicon EEPROM cell suitable for high-temperature applications. The two transistor cell is composed of a select transistor and a floating gate transistor with 10 nm tunnel oxi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::30c286696db5822fb8e7318a1c72e065
https://doi.org/10.1109/55.641439
https://doi.org/10.1109/55.641439
Publikováno v:
1994 IEEE MTT-S International Microwave Symposium Digest (Cat. No.94CH3389-4).
This work presents an easy-to-implement and fast lumped-element circuit model for the parasitics of complex low-loss surface acoustic wave (SAW) devices such as interdigitated interdigital transducer (IIDT) and image impedance connected (IIC) filters
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a284767067e027b30dae8c70b4a874e1
https://doi.org/10.1109/mwsym.1994.335563
https://doi.org/10.1109/mwsym.1994.335563