Zobrazeno 1 - 10
of 55
pro vyhledávání: '"D. Girginoudi"'
Publikováno v:
Active and Passive Electronic Components, Vol 19, Iss 1, Pp 59-71 (1996)
The electrical and optical characteristics of the new high-speed Al/a-Si/c-Si(p)/c-Si(n+)/Al and Al/a- SiC/c-Si(p)/c-Si(n+)/Al optically controlled switches are presented in this paper. These switches exhibit the lowest ever reported values of rise a
Externí odkaz:
https://doaj.org/article/47341c9cf91c4055863af63aec5e63f1
Publikováno v:
Microelectronic Engineering. 133:120-128
Display Omitted a-SiC/c-Si(p) based switches electrical characteristics simulation for the first time.Exhibition of very good agreement among simulated and experimental results.Simulated based model proposition describing satisfactorily switching beh
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::125e020e40ee6cdb032afc381c48d201
https://doi.org/10.1016/j.mee.2014.11.006
https://doi.org/10.1016/j.mee.2014.11.006
Publikováno v:
Superlattices and Microstructures. 75:171-182
The electrical characteristics and the deep level traps of Au Schottky contacts on ZnO:H films have been investigated by temperature-dependent current–voltage ( I – V ) and deep level transient spectroscopy (DLTS) measurements. The films were dep
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::40efa94405cedcbb230dc4a41c48b59a
https://doi.org/10.1016/j.spmi.2014.07.041
https://doi.org/10.1016/j.spmi.2014.07.041
Publikováno v:
Materials Science in Semiconductor Processing. 17:199-206
The electrical characteristics of Pd Schottky contacts on ZnO films have been investigated by current-voltage (I–V) and capacitance–voltage (C–V) measurements at different temperatures. ZnO films of two thicknesses (400 nm and 1000 nm) were gro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ef2ee1750417135e7a002b9fa418e394
https://doi.org/10.1016/j.mssp.2013.09.010
https://doi.org/10.1016/j.mssp.2013.09.010
Publikováno v:
Applied Surface Science. 257:3898-3903
In this work we have investigated the dependence of optical and electrical properties of RF sputtered undoped a-Si:H films and B or P doped a-Si:H films on hydrogen flow rate ( F H ). Low deposition temperature of 95 °C was used, a process compatibl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ce8eb0a0e5d00da77060b6b45ac7c2c1
https://doi.org/10.1016/j.apsusc.2010.11.115
https://doi.org/10.1016/j.apsusc.2010.11.115
Autor:
C. Tsiarapas, D. Girginoudi
Publikováno v:
Materials Science and Engineering: B. :268-274
The impact of fluorine (F) co-implantation on boron (B) deactivation and B TED, as well as on the I – V characteristics of p + n shallow junctions, have been studied for low (10 keV) and high (70 keV) energy Ge preamorphised (PAI) n-type Si samples
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e24b88dda303a81f525237fd687ae874
https://doi.org/10.1016/j.mseb.2008.09.040
https://doi.org/10.1016/j.mseb.2008.09.040
Publikováno v:
Materials Science and Engineering: B. :381-385
The generation and the evolution of extended defects in ultra-shallow n + –p junctions, formed by As ion implantation into silicon at low energies of 15, 10 and 5 keV and a dose of 1 × 10 15 cm −2 , and rapid thermal annealing (RTA) at temperatu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f7e169ac390f021e49774d2018b3e458
https://doi.org/10.1016/j.mseb.2004.07.068
https://doi.org/10.1016/j.mseb.2004.07.068
Autor:
Nikolaos Georgoulas, A. Mitsinakis, V. C. Stergiou, D. Girginoudi, Adonios Thanailakis, Athanassios G. Kontos, M. Kotsani, Yannis S. Raptis
Publikováno v:
Journal of Non-Crystalline Solids. 343:54-60
The mechanical and structural properties of as-deposited polycrystalline Si films, grown by rapid thermal processing low-pressure chemical vapor deposition at a high deposition rate of 0.4 μm/min on oxidized Si wafer substrates, were investigated us
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::84e9e34d03f795cbcb0585e711506b5e
https://doi.org/10.1016/j.jnoncrysol.2004.07.007
https://doi.org/10.1016/j.jnoncrysol.2004.07.007
Publikováno v:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 35:031203
Deep level traps detection and characterization in polycrystalline ZnO thin films have been investigated by deep level transient spectroscopy (DLTS) on Pd/ZnO Schottky contacts. Τhe influence of different amounts of incorporated hydrogen in ZnO laye
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::757a34ba192b58b5d2a0afe73d03fb42
https://doi.org/10.1116/1.4979691
https://doi.org/10.1116/1.4979691
Publikováno v:
Materials Science in Semiconductor Processing. 1:287-292
The deposition and crystallization of a-Si thin films grown by rapid thermal processing have been studied, using transmission electron microscopy. The a-Si films were deposited in a rapid thermal processor at reduced pressures in the temperature rang
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5f0f24a71b95067f3f4068d8aea34a70
https://doi.org/10.1016/s1369-8001(98)00034-1
https://doi.org/10.1016/s1369-8001(98)00034-1