Zobrazeno 1 - 10
of 100
pro vyhledávání: '"D. Garbuzov"'
Autor:
D. Garbuzov
Publikováno v:
Nature and Society: Socio-Natural Interaction in the World-Historical Process.
Publikováno v:
IOP Conference Series: Materials Science and Engineering. 1089:012051
The paper discusses challenges that the present-day electronic industry of the Russian Federation faces today, analyses reasons for lagging in this sector in volume and production scale of the finished products in comparison to the leading in this ar
Autor:
Gregory Belenky, Leon Shterengas, J. Connolly, W. Trussell, D. Garbuzov, D. Donetsky, R. J. Menna
Publikováno v:
Journal of Applied Physics. 88:2211-2214
Broad stripe 1.5 μm InGaAsP/InP multiple-quantum-well graded-index separate-confinement heterostructure lasers with different waveguide widths and doping profiles were designed, fabricated, and characterized. A record value of more than 16 W of puls
Publikováno v:
Chemical Physics Letters. 249:433-437
Absorption, photoexcitation and internal and external luminescence efficiencies for Alq3 films grown by vacuum deposition have been measured accurately for the first time. The absorption spectrum measured at wavelength between λ = 250 and 450 nm is
Publikováno v:
Journal of Crystal Growth. 150:1354-1357
Multiple quantum-well (MQW) lasers with metastable InGaAsSb quantum wells and AlGaAsSb barriers and claddings were grown on n+−GaSb(100) substrates by molecular beam epitaxy. The lasers exhibited a lasing wavelength of 2.78 μm and pulsed operation
Autor:
Manijeh Razeghi, H. J. Yi, E. Bigan, Jacqueline E. Diaz, X. He, D. Garbuzov, M. Erdtmann, E. Kolev
Publikováno v:
Journal of Applied Physics. 76:700-704
Special double‐ and separate‐confinement InGaAsP/GaAs heterostructures intended for photoluminescence measurements have been grown by low‐pressure metal‐organic chemical‐vapor deposition. The band gap of the active region quaternary materia
Publikováno v:
IEEE Photonics Technology Letters. 9:569-571
We demonstrate a monolithically integrated 1.55-/spl mu/m wavelength InGaAsP-InP multiple-quantum-well (MQW) laser with a passive Y-branch waveguide in a vertical twin-waveguide structure. To reduce the sensitivity of the device performance character
Publikováno v:
CLEO/Europe Conference on Lasers and Electro-Optics.
Autor:
Nancy A. Morris, D. Botez, D. Garbuzov, Ramon U. Martinelli, B. Odubanjo, C. Dries, S.R. Forrest, John C. Connolly, A. Bhattacharya, Luke J. Mawst
Publikováno v:
CLEO '97., Summaries of Papers Presented at the Conference on Lasers and Electro-Optics.
High-power continuous wave operation from broadened waveguide (BW) graded-index-separate-confinement-heterostructure (GRINSCH) GaAs/AlGaAs single quantum well (SQW)λ=0.81 μm diodes and SCH double quantum well (DQW) Al-free, strained InGaAs/InGaAsP
Publikováno v:
Applied Physics Letters. 66:1307-1309
Photoluminescence of 1.3 μm wavelength strained multiple quantum well InGaAsP/InP laser structures has been used to understand the excess carrier redistribution between the quantum well and waveguide regions at a high level of excitation. A model is