Zobrazeno 1 - 2
of 2
pro vyhledávání: '"D. G. McIntyre"'
Autor:
Milton Feng, D. G. McIntyre, C. R. Ito, R. Bean, K. C. Hsieh, R. W. Kaliski, H. B. Kim, K. Zanio
Publikováno v:
Journal of Applied Physics. 64:1196-1200
GaAs layers grown on misoriented silicon substrates are examined for defect reduction as a function of thermal annealing and degree of misorientation. These GaAs layers (3–4 μm) are grown by a two‐step metalorganic chemical vapor deposition proc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8add24453efc6e294b5bf80f37f62e16
https://doi.org/10.1063/1.341884
https://doi.org/10.1063/1.341884
Publikováno v:
Applied Physics Letters. 51:2211-2212
HgCdTe infrared photovoltaic detectors were fabricated on silicon substrates for the first time by using intermediate CdTe and GaAs epitaxial layers. No cracking or degradation was observed after thermal cycling these devices (cutoff wavelength of 5.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::92e51627f4ea3de79e94d47673eb6c12
https://doi.org/10.1063/1.98943
https://doi.org/10.1063/1.98943