Zobrazeno 1 - 10
of 10
pro vyhledávání: '"D. G. McCulloch"'
Autor:
L. Yang, A. Karandikar, T. B. Shiell, B. A. Cook, S. Wong, M. R. Field, J. E. Bradby, B. Haberl, D. G. McCulloch, R. Boehler
Publikováno v:
High Pressure Research. 43:1-14
Autor:
A. G. Salek, P. Y. Le, J. G. Partridge, T. J. Raeber, B. Haberl, R. Boehler, B. J. Murdoch, J. E. Bradby, T. Ratcliff, R. G. Elliman, D. R. McKenzie, D. G. McCulloch
Publikováno v:
Applied Physics Letters. 122
We have synthesized hydrogenated and deuterated amorphous carbon materials that have a density, 2.7 ± 0.1 g/cm3, consistent with almost entirely tetrahedral bonding. In hydrogen-free tetrahedral amorphous carbon, the presence of a minority of sp2 bo
Autor:
H N Tran, E L H Mayes, B J Murdoch, D G McCulloch, D R McKenzie, M M M Bilek, A S Holland, J G Partridge
Publikováno v:
Semiconductor Science & Technology; Apr2017, Vol. 32 Issue 4, p1-1, 1p
Autor:
R Ganesan, B Treverrow, B Murdoch, D Xie, A E Ross, J G Partridge, I S Falconer, D G McCulloch, D R McKenzie, M M M Bilek
Publikováno v:
Journal of Physics D: Applied Physics; 6/22/2016, Vol. 49 Issue 24, p1-1, 1p
Publikováno v:
Journal of Physics D: Applied Physics; 11/11/2015, Vol. 48 Issue 44, p1-1, 1p
Autor:
R Ganesan, B J Murdoch, B Treverrow, A E Ross, I S Falconer, A Kondyurin, D G McCulloch, J G Partridge, D R McKenzie, M M M Bilek
Publikováno v:
Plasma Sources Science & Technology; Jun2015, Vol. 24 Issue 3, p1-1, 1p
Publikováno v:
Journal of Physics D: Applied Physics; 4/10/2015, Vol. 48 Issue 13, p1-1, 1p
Publikováno v:
Semiconductor Science & Technology; Feb2015, Vol. 30 Issue 2, p1-1, 1p
Publikováno v:
Semiconductor Science & Technology; Dec2014, Vol. 29 Issue 12, p1-1, 1p
Publikováno v:
Nanotechnology; Mar2008, Vol. 19 Issue 12, p25504-25504, 1p