Zobrazeno 1 - 10
of 13
pro vyhledávání: '"D. G. Ballegeer"'
Publikováno v:
IEEE Transactions on Electron Devices. 44:2136-2142
The DC and microwave characteristics of two sets of AlGaAs/InGaAs PHEMTs having a gate length of 0.2 /spl mu/m are compared. The first set is composed of devices fabricated using a trilayer electron beam resist process for T-gate recess and metalliza
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::43ac253202f9ca61b3a93a9299c51235
https://doi.org/10.1109/16.644626
https://doi.org/10.1109/16.644626
Publikováno v:
Journal of Electronic Materials. 22:375-381
The effects of selective reactive ion etching (SRIE) using SiCl4/SiF4 plasma on delta-doped GaAs/Al0.3Ga0.7As modulation-doped field-effect transistor (MODFET) structures and devices have been investigated. The results are compared with those of corr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::693f5146c8599ca05fd91ec5275c5ee9
https://doi.org/10.1007/bf02661665
https://doi.org/10.1007/bf02661665
Autor:
D. G. Ballegeer, C. Caneau, Paul W. Bohn, Ilesanmi Adesida, Rajaram Bhat, J. E. Maslar, E. Andideh
Publikováno v:
Journal of Applied Physics. 73:2983-2994
Structural and electrical property modifications in i‐InP and n+‐InP by reactive ion etching have been characterized by using Raman scattering to observe changes in the positions and intensities of intrinsic phonons and coupled phonon‐plasmon b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8bff577d0c495cf3c970dd1d5d889f45
https://doi.org/10.1063/1.353031
https://doi.org/10.1063/1.353031
Publikováno v:
Journal of Electronic Materials. 21:9-15
The etching characteristics of AlxGa1-xAs in citric acid/H2O2 solutions and SiCl4/SiF4 plasmas have been studied. Using a 4:1 solution of citric acid/H2O2 at 20° C, selectivities of 155, 260, and 1450 have been obtained for GaAs on AlxGa1-xAs withx
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a33c4e7f6d46163bc0d7a1ce70074351
https://doi.org/10.1007/bf02670914
https://doi.org/10.1007/bf02670914
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. :1011-1014
The effects of selective reactive ion etching (SRIE) in SiCl4: SiF4 plasmas on modulation-doped GaAs/Al0.3Ga0.7 As heterostructures have been investigated. Hall effect measurements were conducted to determine SRIE effects on carrier mobility and elec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f894f40ca500d44445ad50437196eed8
https://doi.org/10.1016/0168-583x(91)95753-z
https://doi.org/10.1016/0168-583x(91)95753-z
Publikováno v:
Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM).
Despite their superior high frequency performance, InAlAs/InGaAs modulation-doped field effect transistors (MODFETs) consistently exhibit high output conductances and low gain-to-drain breakdown voltages. Two main cap designs have been used when fabr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c429c18001405158c2160c4492e99ca
https://doi.org/10.1109/iciprm.1994.328237
https://doi.org/10.1109/iciprm.1994.328237
Autor:
Timothy A. Gessert, J.-W. Seo, Xiaonan Li, K.Y. Cheng, A. A. Ketterson, D. G. Ballegeer, Ilesanmi Adesida
Publikováno v:
IEEE Photonics Technology Letters. 4:888-890
Metal-semiconductor-metal (MSM) photodiodes with interdigitated indium-tin-oxide (ITO) electrodes have been fabricated on undoped GaAs using reactive-ion-etching in a methane plasma. The responsivity of ITO MSMs is measured to be approximately 0.8 A/
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0dc12c5ea9d000ef83a424df42f69bf0
https://doi.org/10.1109/68.149898
https://doi.org/10.1109/68.149898
Autor:
S. Agarwala, M. Spencer, M. Tong, A. A. Ketterson, J. Griffin, D. G. Ballegeer, Ilesanmi Adesida
Publikováno v:
MRS Proceedings. 240
The effects of selective reactive ion etching (SRIE) in SiCl4/SiF4 plasmas on GaAs/AlxGai-xAs heterostructures have been studied. Auger electron spectroscopy (AES) and Schottky diode measurements were performed to determine the effects of SRIE and po
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b16cf7768570efe5e2f32aa71b15cdc1
https://doi.org/10.1557/proc-240-335
https://doi.org/10.1557/proc-240-335
Autor:
K. Nummila, M. Tong, Ilesanmi Adesida, Kangguo Cheng, A.A. Ketterson, J.-W. Seo, D. G. Ballegeer, Sung-Mo Kang
Publikováno v:
IEEE Transactions on Electron Devices. 39:2676-2677
Summary form only given. High-performance quarter-micrometer pseudomorphic modulation-doped field-effect transistors (MODFETs) and a metal-semiconductor-metal (MSM) photodetector have been used in the design of a 0.85- mu m wavelength sensitive high-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b012232f42900b9ce718b281f95274c5
https://doi.org/10.1109/16.163552
https://doi.org/10.1109/16.163552
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 11:2560
A multilayer electron beam resist process for asymmetric gate recess for field‐effect transistors (FETs) in compound semiconductors is presented. With this process, it is possible to decrease the drain conductance while maintaining a large source c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::82edc14530ad363db74e9f5322b7ae8f
https://doi.org/10.1116/1.586624
https://doi.org/10.1116/1.586624