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Akademický článek

Germanium on Glass: A Novel Platform for Light-Sensing Devices

Autor: L. Colace, V. Sorianello, G. Assanto, D. Fulgoni, L. Nash, M. Palmer

Publikováno v: IEEE Photonics Journal, Vol 2, Iss 5, Pp 686-695 (2010)

Using layer transfer and wafer bonding followed by epitaxial regrowth, we design, realize, and characterize a novel generation of Germanium-on-Glass (GoG) near-infrared light sensors. In particular, we demonstrate GoG p-n junction photodetectors and

Externí odkaz: https://doaj.org/article/9f73686fe4f94a42bb4afb694f9ac1e4

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Germanium on insulator near-infrared photodetectors fabricated by layer transfer

Autor: A. De Iacovo, D. Fulgoni, M. Palmer, Gaetano Assanto, Lorenzo Colace, Vito Sorianello, L. Nash

Publikováno v: Thin Solid Films. 518:2501-2504

We report oil novel pn Ge photodetectors fabricated oil glass The fabrication consists of wafer bonding and layer splitting. followed by a low-temperature epitaxial growth of Ge The photodiodes are characterized in terms of dark current and responsiv

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::145b51df96390a11109148aa352c6e3b
https://doi.org/10.1016/j.tsf.2009.09.134

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Germanium-on-glass solar cells

Autor: Lorenzo Colace, Vito Sorianello, M. Palmer, Gaetano Assanto, D. Fulgoni, L. Nash, Carlo Maragliano

Publikováno v: 8th IEEE International Conference on Group IV Photonics.

We report on the fabrication and characterization of Ge solar cells on glass realized by layer transfer and epitaxial regrowth. These devices exhibit typical conversion efficiency exceeding 2.4% under AM1.5 irradiation and maximum efficiency of 3.7%

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4e755b63d8fbf5db168db23da0856464
https://doi.org/10.1109/group4.2011.6053781

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Germanium-on-Glass solar cells: fabrication and characterization

Autor: Vito Sorianello, D. Fulgoni, Carlo Maragliano, Lorenzo Colace, L. Nash, Gaetano Assanto

We report on Germanium on Glass solar cells realized by wafer bonding, layer splitting and epitaxial regrowth. We provide a detailed description of the layer transfer process and discuss the material characterization. The solar cells are fabricated a

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bfdd0e99d71541d9bbe2ca59e971f13c
https://hdl.handle.net/11590/267416

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Inverted thin film InGaP/GaAs tandem solar cells for CPV applications using epitaxial lift off

Autor: L. Nash, Ian Ballard, Gerard Bauhuis, E.J. Haverkamp, D. Fulgoni, Geoffrey Duggan, John J. Schermer, Peter Mulder

Publikováno v: 35th IEEE Photovoltaic Specialists Conference, Hawaiian Convention Center Honolulu, Hawaii, June 20-25, 2010. Conference Proceedings, pp. 001243-001247
35th IEEE Photovoltaic Specialists Conference, Hawaiian Convention Center Honolulu, Hawaii, June 20-25, 2010. Conference Proceedings, 001243-001247. S.l. : IEEE
STARTPAGE=001243;ENDPAGE=001247;TITLE=35th IEEE Photovoltaic Specialists Conference, Hawaiian Convention Center Honolulu, Hawaii, June 20-25, 2010. Conference Proceedings

Contains fulltext : 174583.pdf (Publisher’s version ) (Closed access) Contains fulltext : 174583.pdf (Author’s version preprint ) (Open Access) 35th IEEE Photovoltaic Specialists Conference, Hawaiian Convention Center Honolulu, Hawaii, June 20-25

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c52f32fd8b33a37291da6a5f66cd557f
https://hdl.handle.net/2066/174583

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Germanium-on-glass near-infrared detectors

Autor: Gaetano Assanto, Vito Sorianello, D. Fulgoni, L. Nash, Lorenzo Colace, A. De Iacovo

Ge-on-glass photodetectors is fabricated by wafer bonding and layer splitting, followed by the epitaxial growth of pn structures. The detectors exhibit a remarkably low dark current density of 50 muA/cm 2 at 1 V reverse bias and responsivities as hig

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::245928a19741353704e8f7092b5b11e1
https://hdl.handle.net/11590/149062

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Near-Infrared p-i-n Ge-on-Si Photodiodes for Silicon Integrated Receivers

Autor: Lorenzo Colace, L. Nash, Gaetano Assanto, D. Fulgoni

We investigate and characterize p-i-n near-infrared photodiodes fabricated in Ge-on-Si by reduced-pressure chemical vapor deposition, a technology compatible with silicon processing. The detectors exhibit remarkably low dark current densities of 1mA/

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fec103a69c170eebb60d7921846c3f1a
https://hdl.handle.net/11590/120430

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Low dark-current germanium-on-silicon near-infrared detectors

Autor: Lorenzo Colace, P. Ferrara, D. Fulgoni, Gaetano Assanto, L. Nash

We demonstrate near-infrared Ge-on-Si photodiodes designed to minimize the dark current density and fabricated by chemical vapor deposition. The p-i-n detectors exhibit record low dark currents of 7 nA at 1-V reverse bias with responsivities close to

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cc2f41e569a68d20db2e1af54c406ed9
https://hdl.handle.net/11590/149073

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