Zobrazeno 1 - 10
of 51
pro vyhledávání: '"D. Foty"'
Publikováno v:
IEEE Transactions on Nuclear Science. 50:915-920
Design requirements for high-density detector front-ends and other high-performance analog systems routinely force designers to operate devices in moderate inversion. However, CMOS models have traditionally not handled this operating region very well
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b23fd6fc059452a47cbb549ca4ef0c8
https://doi.org/10.1109/tns.2003.814588
https://doi.org/10.1109/tns.2003.814588
Publikováno v:
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 22:225-237
A computer-aided design (CAD) methodology for optimizing MOS transistor current and sizing is presented where drain current ID, inversion level (represented by inversion coefficient IC), and channel length L are selected as three independent degrees
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::67333c1ee521213c8eab9d9e6c10b4bb
https://doi.org/10.1109/tcad.2002.806606
https://doi.org/10.1109/tcad.2002.806606
Autor:
D. Foty
Publikováno v:
IEEE Circuits and Devices Magazine. 15:23-28
When moving to deep-submicron design, the analog designer faces a number of challenges unique to that regime. Due to the need to decrease the supply voltage V/sub dd/ (due to power dissipation and hot carrier reliability concerns) while the threshold
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0875f1d25e56b97ad595a28110230d26
https://doi.org/10.1109/101.755473
https://doi.org/10.1109/101.755473
Autor:
D. Foty
Publikováno v:
IEEE Circuits and Devices Magazine. 14:26-31
An overview of MOSFET modeling for circuit simulation is presented. After discussing some of the implications of analog and low-power applications, the history of the MOS models commonly used in SPICE-like circuit simulators is presented, followed by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::95fa6fbfcaabc59359bc5e9b2e2d24fa
https://doi.org/10.1109/101.708477
https://doi.org/10.1109/101.708477
Autor:
G. Gildenblat, D. Foty
Publikováno v:
International Journal of High Speed Electronics and Systems. :317-373
We review the modeling of silicon MOS devices in the 10–300 K temperature range with an emphasis on the specifics of low-temperature operation. Recently developed one-dimensional models of long-channel transistors are discussed in connection with e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4fb438ea6397f3711214757b80e805c
https://doi.org/10.1142/s0129156495000092
https://doi.org/10.1142/s0129156495000092
Autor:
D. Foty
Publikováno v:
2008 11th International Biennial Baltic Electronics Conference.
Some critical (but little-recognized) aspects of nanoscale electron device technology are considered. It is noted that, according to history, nanoscale electron devices will have to address some convergence of an abundance and a scarcity. A major imp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9fe97fddcf952b2a413e5f6a62d20a6f
https://doi.org/10.1109/bec.2008.4657479
https://doi.org/10.1109/bec.2008.4657479
Autor:
D. Foty
Publikováno v:
2008 International Semiconductor Conference.
Some critical (but little-recognized) aspects of nanoscale electron device technology are considered. According to history, nanoscale electron devices will have to address some convergence of an abundance and a scarcity. A major impediment to progres
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dc7f17271e500c65ce9303b10f13493d
https://doi.org/10.1109/smicnd.2008.4703317
https://doi.org/10.1109/smicnd.2008.4703317
Autor:
D. Foty
Publikováno v:
AFRICON 2007.
As data content mushrooms and becomes increasingly dispersed, the demand for (and need for) bandwidth - both wired and wireless - continues to increase; however, technology has demonstrably not been up to this task. A major intellectual gap has been
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d2371a3cc3cb75bd1c8c1c2ac86ce504
https://doi.org/10.1109/afrcon.2007.4401584
https://doi.org/10.1109/afrcon.2007.4401584
Autor:
D. Foty
Publikováno v:
Proceedings of the International Conference Mixed Design of Integrated Circuits and System, 2006. MIXDES 2006..
While there is growing demand for wireless bandwidth, the most pressing problem affecting this situation today is the attempt to increase bandwidth by extending the same technologies with tricks - rather than by using innovation. Opportunities for in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::42dff4ebc6257821f12519afd7e21908
https://doi.org/10.1109/mixdes.2006.1706530
https://doi.org/10.1109/mixdes.2006.1706530
Autor:
D. Foty, G. Gildenblat
Publikováno v:
International Symposium on Signals, Circuits and Systems, 2005. ISSCS 2005..
In this paper, the critical importance of scaling theory to the success of CMOS technology will be reviewed and evaluated. The history of CMOS shows that scaling theory has been the dominant theme, but that the evolution of the technology has followe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4549040d10f044ae7f4167aaeb752c2c
https://doi.org/10.1109/isscs.2005.1509835
https://doi.org/10.1109/isscs.2005.1509835