Zobrazeno 1 - 10
of 12
pro vyhledávání: '"D. F. Rioux"'
Autor:
I. M. Vitomirov, A. Raisanen, S. Chang, R. E. Viturro, L. J. Brillson, D. F. Rioux, P. D. Kirchner, G. D. Pettit, J. M. Woodall
Publikováno v:
Journal of Electronic Materials. 22:111-117
Effects of substrate doping and growth method on interface deep level formation and Schottky barrier height were investigated using low-energy catho doluminescence and soft x-ray photoemission spectroscopy. Our results reveal that for Au/GaAs(100) co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::36671d0771385c89353edc352c7f3244
https://doi.org/10.1007/bf02665732
https://doi.org/10.1007/bf02665732
Autor:
I. M. Vitomirov, Christian Mailhiot, Jerry M Woodall, Leonard J. Brillson, George David Pettit, S. Chang, Y. J. Kime, D. F. Rioux, Peter D. Kirchner
Publikováno v:
Physical Review B. 45:13438-13451
Soft-x-ray photoemission studies of Al and Au on molecular-beam epitaxially grown GaAs(100) vicinal surfaces at low temperature demonstrate orientation-dependent interface electronic properties and chemistry. Misorientation of the substrate introduce
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::910d220ba184ce32deb8a78235157786
https://doi.org/10.1103/physrevb.45.13438
https://doi.org/10.1103/physrevb.45.13438
Autor:
I. M. Vitomirov, Peter D. Kirchner, Shu Chang, Leonard J. Brillson, George David Pettit, Jerry M. Woodall, D. F. Rioux
Publikováno v:
Physical Review B. 44:1391-1394
Les gradins associes aux surfaces intentionnellement desorientees de GaAs (100) produisent des etats de charge d'interface qui peuvent substantiellement modifier la hauteur de barriere de Schottky. Ces etats d'interface sont situes pres du milieu de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ece248acb1a38a847966146c750f060f
https://doi.org/10.1103/physrevb.44.1391
https://doi.org/10.1103/physrevb.44.1391
Autor:
I. M. Vitomirov, George David Pettit, Shu Chang, D. F. Rioux, Jerry M. Woodall, Leonard J. Brillson, Peter D. Kirchner
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 9:902-906
We have used soft x‐ray photoemission spectroscopy to study the chemical and electronic properties of Al on molecular beam epitaxy GaAs(100) vicinal surfaces, specifically with orientations 1°, 2°, and 4° toward [111]B, 2° toward [111]A, as wel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c0e5be9d2c1acbdd00fd4019564b9e66
https://doi.org/10.1116/1.577338
https://doi.org/10.1116/1.577338
Autor:
I. M. Vitomirov, D. F. Rioux, Shu Chang, J. P. Faurie, Sivalingam Sivananthan, Leonard J. Brillson
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 9:966-971
We have used high‐resolution soft x‐ray photoemission spectroscopy (SXPS) to study chemistry, atomic distributions, and Fermi level (EF) movement caused by Au deposition on molecular beam epitaxy (MBE) ‐grown CdTe(111)‐B surfaces. Using etch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::28e81a3f4a726e27d72c26e8114b19ab
https://doi.org/10.1116/1.577557
https://doi.org/10.1116/1.577557
Autor:
I. M. Vitomirov, Peter D. Kirchner, Michael H. Hecht, George David Pettit, D. F. Rioux, Jerry M Woodall, Shu Chang, Leonard J. Brillson
Publikováno v:
Physical Review B. 41:12299-12302
Soft-x-ray photoemission spectroscopy (SXPS) measurements of Fermi-level positions within the band gap of clean, GaAs(100) surfaces demonstrate that photovoltaic charging produces a major shift in the apparent band bending at low (50--100 K) temperat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::06ed905cbb0f905103f3257b6a281717
https://doi.org/10.1103/physrevb.41.12299
https://doi.org/10.1103/physrevb.41.12299
Autor:
D. F. Rioux, M. Capozi, N. G. Stoffel, A. Campo, Carlo Ottaviani, Marshall Onellion, Y. A. Chang, Marino Marsi, C. Quaresima, Antonio Terrasi, Giorgio Margaritondo, P. Perfetti, J. T. McKinley, E. Wang, Yeukuang Hwu
Publikováno v:
Physical Review B. 43:3678-3680
New photoemission data are presented for a series of Ce-doped or undoped, reduced or nonreduced, Nd cuprates. The data, taken with high signal-to-noise level in the constant-initial-state mode, demonstrate the presence of Cu+, in contrast with previo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9602e1638856a0234c2fed20a9d0f0de
https://doi.org/10.1103/physrevb.43.3678
https://doi.org/10.1103/physrevb.43.3678
Autor:
Yeukuang Hwu, U. Debska, Giorgio Margaritondo, J. T. McKinley, Franco Zanini, Antonio Terrasi, D. F. Rioux, Jacek K. Furdyna
We explore the effects of ultrathin Au intralayers at the interfaces of the lattice‐matched heterojunctions ZnSe–Ge and GaP–Si, and compare them to earlier results with Al intralayers. Au intralayers do not chemically react with the semiconduct
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::230c8c0b681bc802cda7246adf2ddd86
http://hdl.handle.net/20.500.11769/42223
http://hdl.handle.net/20.500.11769/42223
Autor:
Shu Chang, I. M. Vitomirov, George David Pettit, Leonard J. Brillson, D. F. Rioux, Jerry M. Woodall, Peter D. Kirchner
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 9:2129
We report a room temperature soft x‐ray photoemission spectroscopic study of electronic barrier formation and chemistry at Al, Ag, and Au contacts with horizontal Bridgman‐grown GaAs(100) surfaces, prepared by etching, heat‐cleaning in situ, an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d47c87b37d603c47288a632f7a8901d1
https://doi.org/10.1116/1.585751
https://doi.org/10.1116/1.585751