Zobrazeno 1 - 10
of 37
pro vyhledávání: '"D. F. Holcomb"'
Autor:
D. F. Holcomb
Publikováno v:
American Journal of Physics. 67:278-297
The ability to make electrically conducting structures of ever smaller size by nanofabrication techniques (the playground of mesoscopic physics) has brought with it entry into a wonderful new range of unexpected quantum phenomena. Interpretation of t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::318b5b825938a792949546694bdd6436
https://doi.org/10.1119/1.19251
https://doi.org/10.1119/1.19251
Autor:
D. F. Holcomb, U. Thomanschefsky
Publikováno v:
Physical Review B. 45:13356-13362
The results of a continuing investigation of the effects of impurity compensation on the characteristics of the metal-insulator (M-I) transition in Si:P are reported. The system used is Si:(P,B). Most of the information is derived from measurements a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1a44d8aa3160c84767ef56029d1b84ef
https://doi.org/10.1103/physrevb.45.13356
https://doi.org/10.1103/physrevb.45.13356
Autor:
M. J. R. Hoch, D. F. Holcomb
Publikováno v:
Physical Review B. 71
Meintjes, Danielson, and Warren (MDW) have recently reported the results of high-temperature NMR and Hall effect experiments using samples of Si:P with P concentrations at, and above, the metal-insulator transition value of $3.7\ifmmode\times\else\te
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6ebbacd89c986deb722226a0d29598fd
https://doi.org/10.1103/physrevb.71.035115
https://doi.org/10.1103/physrevb.71.035115
Autor:
D. F. Holcomb
Publikováno v:
AIP Conference Proceedings.
A small fraction of our physics major students (about 7%) will be our descendants in the university. Another 7% will take up careers in physics or cognate areas based on their Ph.D. degrees. Most of the remaining graduates will go on to non-physics c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d35173664943a15fa374253484e95b34
https://doi.org/10.1063/1.53145
https://doi.org/10.1063/1.53145
Publikováno v:
Physical review letters. 68(9)
We have studied the ESR properties of three compensated n-type Si:P,B samples near the metal-insulator transition covering the low-temperature regime from 30 mK to 10 K. We find that both the susceptibility and the ESR linewidth increase dramatically
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f218e4ebabf8bd9576e6575da527ae8e
https://pubmed.ncbi.nlm.nih.gov/10046161
https://pubmed.ncbi.nlm.nih.gov/10046161
Publikováno v:
Physica B: Condensed Matter. :305-306
29Si Knight shift measurements have been carried out on samples of Si:P and Si:P,B in the vicinity of the metal-insulator transition at temperatures of 4.3 K and 1.5 K. The Knight shift appears to change in a continuous way through nc. Comparison of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ea4d6fff64be4e36ace243bad1386050
https://doi.org/10.1016/s0921-4526(90)81002-6
https://doi.org/10.1016/s0921-4526(90)81002-6
Autor:
D. F. Holcomb
Publikováno v:
The Physics Teacher. 35:198-198
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::24da7277cb021c0fcb56c527c028895d
https://doi.org/10.1119/1.2344644
https://doi.org/10.1119/1.2344644
Publikováno v:
Journal of Applied Physics. 58:3779-3783
Neutron activation measurements of arsenic concentration have been made on a set of samples cut from melt‐grown crystals of Si:As in the concentration range from 7.8×101 8 cm− 3 to 1.1×101 9 cm− 3. Measurements of electrical resistivity at ro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9691f8a62f380f6ee9503da1669149dc
https://doi.org/10.1063/1.335591
https://doi.org/10.1063/1.335591
Autor:
D. F. Holcomb, G. C. Brown
Publikováno v:
Physical Review B. 10:3394-3401
We present new NMR data on the ${\mathrm{P}}^{31}$ resonance in Si:P and ${\mathrm{B}}^{11}$ resonance in Si:B for samples in the impurity concentration range from 5 \ifmmode\times\else\texttimes\fi{} ${10}^{18}$ to 9 \ifmmode\times\else\texttimes\fi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::659f713ac1a0c4a02924b0a8c738ae2b
https://doi.org/10.1103/physrevb.10.3394
https://doi.org/10.1103/physrevb.10.3394
Publikováno v:
Physical Review B. 37:8257-8261
The zero-temperature electrical conductivity, \ensuremath{\sigma}(0), of samples of Si:(P,B) has been obtained by extrapolation from measurements at temperatures of 100 mK and above. The compensation ratio K, defined as the ratio of acceptor to donor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ee41cd3ff887286233953a07cd100143
https://doi.org/10.1103/physrevb.37.8257
https://doi.org/10.1103/physrevb.37.8257