Zobrazeno 1 - 10
of 367
pro vyhledávání: '"D. F. Holcomb"'
Autor:
D. F. Holcomb
Publikováno v:
American Journal of Physics. 67:278-297
The ability to make electrically conducting structures of ever smaller size by nanofabrication techniques (the playground of mesoscopic physics) has brought with it entry into a wonderful new range of unexpected quantum phenomena. Interpretation of t
Autor:
Han, Liuliu1, Sun, Zhongji2 sun_zhongji@imre.a-star.edu.sg, Xia, Wenzhen3, Tsai, Shao‐Pu4, Zhang, Xukai1, Rao, Jing1, Wang, Pei2, Ngo, Andrew Chun Yong2, Li, Zhiming5, Liu, Yong6 yonliu@csu.edu.cn, Raabe, Dierk1
Publikováno v:
Advanced Science. 8/21/2024, Vol. 11 Issue 31, p1-9. 9p.
Autor:
D. F. Holcomb, U. Thomanschefsky
Publikováno v:
Physical Review B. 45:13356-13362
The results of a continuing investigation of the effects of impurity compensation on the characteristics of the metal-insulator (M-I) transition in Si:P are reported. The system used is Si:(P,B). Most of the information is derived from measurements a
Autor:
M. J. R. Hoch, D. F. Holcomb
Publikováno v:
Physical Review B. 71
Meintjes, Danielson, and Warren (MDW) have recently reported the results of high-temperature NMR and Hall effect experiments using samples of Si:P with P concentrations at, and above, the metal-insulator transition value of $3.7\ifmmode\times\else\te
Autor:
D. F. Holcomb
Publikováno v:
AIP Conference Proceedings.
A small fraction of our physics major students (about 7%) will be our descendants in the university. Another 7% will take up careers in physics or cognate areas based on their Ph.D. degrees. Most of the remaining graduates will go on to non-physics c
Publikováno v:
Physical review letters. 68(9)
We have studied the ESR properties of three compensated n-type Si:P,B samples near the metal-insulator transition covering the low-temperature regime from 30 mK to 10 K. We find that both the susceptibility and the ESR linewidth increase dramatically
Publikováno v:
Physica B: Condensed Matter. :305-306
29Si Knight shift measurements have been carried out on samples of Si:P and Si:P,B in the vicinity of the metal-insulator transition at temperatures of 4.3 K and 1.5 K. The Knight shift appears to change in a continuous way through nc. Comparison of
Autor:
D. F. Holcomb
Publikováno v:
The Physics Teacher. 35:198-198
Autor:
Inyushkin, A. V.
Publikováno v:
Journal of Applied Physics; 12/14/2023, Vol. 134 Issue 22, p1-28, 28p
Publikováno v:
Journal of Applied Physics. 58:3779-3783
Neutron activation measurements of arsenic concentration have been made on a set of samples cut from melt‐grown crystals of Si:As in the concentration range from 7.8×101 8 cm− 3 to 1.1×101 9 cm− 3. Measurements of electrical resistivity at ro