Zobrazeno 1 - 5
of 5
pro vyhledávání: '"D. F. Downey"'
Autor:
T. Selinger, Peter B. Griffin, J. Gelpey, S. H. Jain, D. F. Downey, James D. Plummer, S. McCoy
Publikováno v:
IEEE Transactions on Electron Devices. 52:1610-1615
Junction formation using solid phase epitaxial (SPE) regrowth has been gaining popularity due to its high activation and low thermal budget which results in lower diffusion. Recently, it was shown that by carrying out the SPE regrowth at 1050/spl deg
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d61af9c76d4c781fe76ec36f84bb808c
https://doi.org/10.1109/ted.2005.850621
https://doi.org/10.1109/ted.2005.850621
Autor:
James D. Plummer, T. Selinger, J. Gelpey, S. McCoy, Peter B. Griffin, D. F. Downey, S. H. Jain
Publikováno v:
Journal of Applied Physics. 96:7357-7360
There has been considerable interest recently, in the formation of the source drain junctions of metal oxide semiconductor transistors using solid phase epitaxy (SPE) to activate the dopants rather than a traditional high temperature anneal. Previous
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3580d7651593bf893bdcca6c670e797b
https://doi.org/10.1063/1.1814792
https://doi.org/10.1063/1.1814792
Publikováno v:
MRS Proceedings. 396
Secondary ion mass spectrometry (SIMS) is used to produce depth profiles of ion-implanted phosphorus in silicon. The implant energies are 250, 500, and 750 keV, and there is a 0.06-μm thick oxide on the silicon. The experimental profiles are compare
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2b8f14cbf813c087b0c5ae82a818abe1
https://doi.org/10.1557/proc-396-51
https://doi.org/10.1557/proc-396-51
Publikováno v:
MRS Proceedings. 7
The rapid annealing of implant damage using thermal radiation has been shown to be a production-worthy method of achieving good activation and minimal dopant redistribution of implanted species. The method involves the shuttered exposure of a standar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::19cfe3b8860880c3ba69773d70c4db62
https://doi.org/10.1557/proc-7-395
https://doi.org/10.1557/proc-7-395
Publikováno v:
Ion Implantation: Equipment and Techniques ISBN: 9783642691584
Today, ion implantation is used where precise control of the dopant distribution in the device is important. In the future, rapid annealing will be used where dimensional control for very small geometry circuits is important. Rapid annealing techniqu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::93e82b00ec29df1c5f4b491396b6dec0
https://doi.org/10.1007/978-3-642-69156-0_59
https://doi.org/10.1007/978-3-642-69156-0_59
