Výsledky vyhledávání - "D. F. Downey"

Low Resistance, Low-Leakage Ultrashallow p$^+$-Junction Formation Using Millisecond Flash Anneals

Autor: T. Selinger, Peter B. Griffin, J. Gelpey, S. H. Jain, D. F. Downey, James D. Plummer, S. McCoy

Publikováno v: IEEE Transactions on Electron Devices. 52:1610-1615

Junction formation using solid phase epitaxial (SPE) regrowth has been gaining popularity due to its high activation and low thermal budget which results in lower diffusion. Recently, it was shown that by carrying out the SPE regrowth at 1050/spl deg

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d61af9c76d4c781fe76ec36f84bb808c
https://doi.org/10.1109/ted.2005.850621

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Metastable boron active concentrations in Si using flash assisted solid phase epitaxy

Autor: James D. Plummer, T. Selinger, J. Gelpey, S. McCoy, Peter B. Griffin, D. F. Downey, S. H. Jain

Publikováno v: Journal of Applied Physics. 96:7357-7360

There has been considerable interest recently, in the formation of the source drain junctions of metal oxide semiconductor transistors using solid phase epitaxy (SPE) to activate the dopants rather than a traditional high temperature anneal. Previous

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3580d7651593bf893bdcca6c670e797b
https://doi.org/10.1063/1.1814792

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Depth Profiles of Medium Energy Phosphorus Implants into Silicon

Autor: James P. Lavine, L. R. Zheng, D. F. Downey, P. M. Whalen

Publikováno v: MRS Proceedings. 396

Secondary ion mass spectrometry (SIMS) is used to produce depth profiles of ion-implanted phosphorus in silicon. The implant energies are 250, 500, and 750 keV, and there is a 0.06-μm thick oxide on the silicon. The experimental profiles are compare

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2b8f14cbf813c087b0c5ae82a818abe1
https://doi.org/10.1557/proc-396-51

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Akademický článek

Number of Siblings and Mental Health Among Adolescents: Evidence From the U.S. and China.

Autor: Downey, Douglas B., Cao, Rui

Publikováno v: Journal of Family Issues; Nov2024, Vol. 45 Issue 11, p2822-2850, 29p

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Rapid Annealing of Implant Damage Using Thermal Radiation

Autor: C. J. Russo, R. T. Fulks, W. T. Stacy, P. R. Hanley, D. F. Downey

Publikováno v: MRS Proceedings. 7

The rapid annealing of implant damage using thermal radiation has been shown to be a production-worthy method of achieving good activation and minimal dopant redistribution of implanted species. The method involves the shuttered exposure of a standar

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::19cfe3b8860880c3ba69773d70c4db62
https://doi.org/10.1557/proc-7-395

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Rapid Isothermal Annealing for Semiconductor Applications: Aspects of Equipment Design

Autor: S. C. Holden, D. F. Downey, C. J. Russo, R. T. Fulks

Publikováno v: Ion Implantation: Equipment and Techniques ISBN: 9783642691584

Today, ion implantation is used where precise control of the dopant distribution in the device is important. In the future, rapid annealing will be used where dimensional control for very small geometry circuits is important. Rapid annealing techniqu

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::93e82b00ec29df1c5f4b491396b6dec0
https://doi.org/10.1007/978-3-642-69156-0_59