Zobrazeno 1 - 8
of 8
pro vyhledávání: '"D. E. Vázquez Valerdi"'
Autor:
J. A. Luna López, A. Benítez Lara, A. Morales Sánchez, A. D. Hernández-de la Luz, D. E. Vázquez Valerdi, G. García Salgado, Miguel A. Dominguez, F. Flores Gracia
Publikováno v:
Journal of Electronic Materials. 46:2309-2322
In this work, the effect of hydrogen flow and thermal annealing on the compositional and optical properties of non-stoichiometric silicon oxide (SiOx) films with embedded silicon nanocrystals is reported. The SiO x films are obtained by hot filament
Autor:
Godofredo Garcia Salgado, D. E. Vázquez Valerdi, A. D. Hernández de la Luz, Z. J. Hernández Simón, G. Mendoza Conde, J. A. Luna López, A. Morales Sánchez, F. Flores Gracia, Miguel A. Dominguez
Publikováno v:
Procedia Engineering. 168:1296-1299
Actually, optical and electrical characteristics of the SiOx films need to be understood in order to improve and propose optoelectronics devices. Non-stoichiometric silicon oxide (SiOx) films with embedded silicon nanocrystals (Si-ncs) were obtained
Autor:
G. García Salgado, D. E. Vázquez Valerdi, M. García Ortega, A. Morales Sánchez, J. A. Luna López, J. Carrillo López
Publikováno v:
Sensors and Actuators A: Physical. 186:178-183
The optical and electrical properties of twofold SRO films were analyzed. MOS-like structures with twofold SRO films as the active layer were fabricated. The twofold SRO layer is composed by a silicon rich and a near stoichiometric silicon oxide film
Autor:
A. Ponce Pedraza, T. Díaz Becerril, H. Juárez Santiesteban, J. A. Luna López, D. E. Vázquez Valerdi, Godofredo Garcia Salgado, J. Carrillo López, A. Morales Sánchez, E. Rosendo Andrés
Publikováno v:
Procedia Engineering. 25:304-308
Room-temperature photoluminescence (PL) of non-stoichiometric silicon oxide (SiOx, x
Autor:
J. Alberto Luna López, T. Díaz-Becerril, Godofredo Garcia Salgado, D. E. Vázquez Valerdi, F. Flores Gracia, J. Carrillo López, A. Ponce Pedraza
Publikováno v:
Nanoscale Research Letters
Structural, compositional, morphological, and optical properties of silicon nanocrystal (Si-nc) embedded in a matrix of non-stoichiometric silicon oxide (SiOx) films were studied. SiOx films were prepared by hot filament chemical vapor deposition tec
Autor:
D. E. Vázquez-Valerdi, J. A. Luna-López, G. García-Salgado, J. Carrillo-López, T. Díaz-Becerril, E. Rosendo, H. Juárez-Santiesteban
Publikováno v:
Benemérita Universidad Autónoma de Puebla
BUAP
Redalyc-BUAP
BUAP
Redalyc-BUAP
En el presente trabajo se estudian las propiedades morfológicas, de composición y ópticas de películas de óxido de silicio fuera de estequiometría (SiOx) mediante Microscopía de Fuerza Atómica (AFM), Espectroscopia Infrarroja por Transformada
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______3056::1f38e46e009fbb48eb6b6f25316ee6b2
http://www.redalyc.org/articulo.oa?id=94219281004
http://www.redalyc.org/articulo.oa?id=94219281004
Autor:
Godofredo Garcia Salgado, J. A. Luna López, A. Benítez Lara, D. E. Vázquez Valerdi, N. D. Espinosa Torres, J. Carrillo López
Publikováno v:
Procedia Engineering. :168-171
Twofold non-stoichiometric silicon oxide (SiOx) films before and after of a thermal annealing are characterized by different techniques. The twofold SiOx films are obtained by hot filament chemical vapor deposition technique in the range of temperatu
Autor:
A. Morale Sánchez, J. A. Luna López, Mariano Aceves-Mijares, J. Carrillo López, Godofredo Garcia Salgado, T. Díaz Becerril, M. García Ortega, D. E. Vázquez Valerdi
Publikováno v:
Procedia Engineering. :329-333
The optical properties of silicon rich oxide (SRO) have been deeply studied because, between other reasons, they emit an intense photoluminescence (PL) from visible to the near infrared range when excited with UV light. MOS-like structures with SRO f