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Autor: D. E. Sykes

Publikováno v: Springer Handbook of Electronic and Photonic Materials ISBN: 9783319489315

The physical bases of surface chemical analysis techniques are described in the context of semiconductor analysis. Particular emphasis is placed on the SIMS (secondary ion mass spectrometry) technique, as this is one of the more useful tools for rout

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::343aeaf702bfead7e355ed3538eaf540
https://doi.org/10.1007/978-3-319-48933-9_18

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VAMAS round-robin study to evaluate a correction method for saturation effects in D-SIMS

Autor: Akio Takano, Mitsuhiro Tomita, Charles W. Magee, K. J. Kim, Joe Bennett, Mario Barozzi, D. E. Sykes, Hidehiko Nonaka, Atsushi Murase, David S. Simons, S. Hayashi, Yoshikazu Homma

Publikováno v: Surface and Interface Analysis. 46:244-248

Recently, dynamic SIMS (D-SIMS) is being used to analyze ions simultaneously over a wide range of concentrations, from matrix level to extremely low (ng g−1). However, D-SIMS detectors, which are mostly used in pulse counting systems, have problems

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1e3cade864649805e8dc253f9a3bd3bf
https://doi.org/10.1002/sia.5537

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HIV pathogenesis and immunity (PP-074)

Autor: S. Kutscher, L. W. Thørner, K. Kobayashi, S. Tcheung, S. D. Mahajan, L. Díaz Muñoz, M. Baseler, V. Erfle, M. T. M. Giret, P. M. Mwimanzi, C. Vandergeeten, C. Lane, I. I. Generalov, T. Amet, L. H. Harritshøj, M. Leal Noval, R. Aalinkeel, C. Erikstrup, R. Tanaka, S. J. Kent, I. Mangeot-Méderlé, K. Nayak, L. Gudmundsdotter, Z. Bernstein, M. Takiguchi, J. Hinkula, S. Hu, S. E. Johansson, A. Iwamoto, Shafiqur Rahman, N. Singh, J. L. Reynolds, Z. Nan, M. Moutschen, A. Corneau, S. Watanabe, T. Friesen, A. Kawana-Tachikawa, D. Byrd, H. Fausther-Bovendo, S. Sammicheli, P. Tantivorasit, K. Kärre, M. Takeda, M. Ishige, R. Davey, Elbert Reyes, S. Sharma, M. Ghabril, K. Ruxrungtham, M. Kannagi, T. Fujii, S. Allgayer, S. Subramanayam, T. A. Parhomenko, M. Raska, Sajib Chakraborty, H. Ullum, P. Debré, Q. Yu, S. Brighenti, J. Andersson, C. Thielen, J. Chandrabose, A. García Torre, J. Martinez, B. Saha, J. D. Rosales, M. Vajpayee, N. Ahmed, L. Berg, B. Wahren, M. Svensson, K. Imai, S. Rahmouni, J. D. Lifson, T. Miura, Y. Takahashi, N. Mehra, N. Tachikawa, C. Gilbert, R. C. Succi, S. Grutzmeier, H. Furukawa, P. Chatkulkawin, R. Brown, A. Busca, V. Vieillard, T. Chikata, Z. I. Akhmedjanova, H. Nakamura, M. C. Elliott, J. Adams, N. Obel, S. Hall, A. W. Chung, K. Honda, T. Masuda, K. Ochiai, E. M. Shankar, G. Roby, A. Shajiei, J. Adelsberger, S. A. Schwartz, M. Hashimoto, D. Hoffmann, T. Okamoto, C. Wilhelm, M. Singh, E. S. Odintsova, S. Nowroozalizadeh, K. Nakayama, C. J. Dembek, S. Sirivichayakul, Y. Mitsuki, M. J. Tremblay, S. Swaminathan, M. Larsson, S. Bayanolhagh, P. Singh, M. Tamura, K. Shibusawa, Y. Tamura, Melisa Colmenares, T. Ueno, V. N. Buneva, H. Gatanaga, Darrell L. Peterson, A. Hasegawa, S. Buranapraditkun, E. Rollman, Ashish Kumar, Y. Suzuki, N. Vivar, Aneesa Ansari, P. Ammaranond, H. Gaines, K. Sakai, Henry Montes, R. Le Grand, Y. Tanaka, A. Agosto-Mojica, G. A. Nevinsky, D. F. Nixon, M. Saxena, H. Park, B. Réthi, L. Czernekova, I. Stratov, Z. Moldoveanu, M. Jansson, F. Chiodi, Siham Salmen, J. Mestecky, M. Proschan, E. G. Kallas, M. Catalfamo, N. Dereuddre-Bosquet, M. Muñoz Fernández, G. Kaur, D. E. Sykes, T. Chida, K. Terahara, Y. Kiyoshi, N. Chalasani, C. J. Gouveia, A. Cosma, N. Ruffin, Lisbeth Berrueta, C. Rehm, C. Hsiao, Y. Yanagi, B. M. Ali, K. F. Che, S. Oka, Y. Tsunetsugu-Yokota, F. Maldarelli, N. Okamura, T. Koibuchi, R. Correa Rocha, A. A. Lambert, J. Novak, L. P. Sizyakina, S. Okada, Mustafizur Rahman, L. E. Hanna, L. Andersson, B. B. Nair, K. Zachova, F. D. Goebel, E. Sandström, J. R. Bogner, B. Hejdeman, T. Hayashi, G. Sharma

Publikováno v: International Immunology. 22:iv63-iv69

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::791b0bdb5f2e741a4589ab42a0c6d408
https://doi.org/10.1093/intimm/dxq254

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Round-robin study of arsenic implant dose measurement in silicon by SIMS

Publikováno v: Applied Surface Science. 252:7232-7235

An international round-robin study was undertaken under the auspices of ISO TC201/SC6 to determine the best analytical conditions and the level of interlaboratory agreement for the determination of the implantation dose of arsenic in silicon by secon

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::11698b9a6c91acf3565d668fed865048
https://doi.org/10.1016/j.apsusc.2006.02.152

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Atomic force microscopy investigation of polysilicon films before and after SIMS analysis: the effects of sample rotation

Autor: S J Guilfoyle, M Petty, A Chew, N E Moiseiwitsch, D E Sykes

Publikováno v: Journal of Physics: Condensed Matter. 10:1699-1706

Differences have been found in the depth resolution of dynamic SIMS profiles from polysilicon films on silicon carried out with and without sample rotation. Corresponding differences in the surface topography have been observed using atomic force mic

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2e8a984945b602a286ac4ca7158ad2e9
https://doi.org/10.1088/0953-8984/10/8/006

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Secondary ion mass spectrometry round-robin study of relative sensitivity factors in gallium arsenide

Publikováno v: Surface and Interface Analysis. 26:144-154

Round-robin studies on relative sensitivity factors (RSFs) in secondary ion mass spectrometry (SIMS) were conducted using bulk GaAs samples uniformly doped with various impurity elements. A total of 31 laboratories participated in two round-robins. M

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c2208f3be5560cd9a9234b17c16ee367
https://doi.org/10.1002/(sici)1096-9918(199802)26:2<144::aid-sia351>3.0.co

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SIMS without sums

Autor: D. E. Sykes, Alison Chew

Publikováno v: III-Vs Review. 10:41-44

Secondary Ion Mass Spectrometry (SIMS) is probably the most powerful analytical technique for the characterization of semiconductor materials. Its strength lies in its ability to perform high sensitivity chemical analysis directly on semiconductor ma

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::eb8dd38c183d8e398ef460cf2b2fab7a
https://doi.org/10.1016/s0961-1290(97)86175-3

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XPS of oxidized wool fibre surfaces

Autor: I. L. Clackson, D. E. Sykes, R. H. Bradley

Publikováno v: Surface and Interface Analysis. 22:497-501

Oxygen plasma and ultra violet (UV) ozone treatments have been used to oxidize the surfaces of batches of natural wool fibres and woven cloths. The changes in surface composition and chemistry induced by these treatments have been followed using X-ra

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d1a5dea9b865c381f66a83fadb9d0b24
https://doi.org/10.1002/sia.7402201105

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SIMS depth profiling with sample rotation in a cameca IMS 3F

Autor: A. Chew, D. E. Sykes

Publikováno v: Surface and Interface Analysis. 21:231-237

The improvements in depth resolution and the suppression of sputter-induced surface topography obtained using sample rotation during SIMS depth profiling in a Cameca IMS 3F are described. The sample rotation was achieved using a stage that maintains

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f04bb3857cd772b99090b293276b5de0
https://doi.org/10.1002/sia.740210404

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