Zobrazeno 1 - 6
of 6
pro vyhledávání: '"D. E. Seeger"'
Publikováno v:
Microelectronic Engineering. 13:165-172
Proximity effects can be reduced when exposing x-ray mask membranes by increasing the electron-beam accelerating voltage. Forward scattering in the resist is reduced and exposure due to backscattered electrons is also reduced since the more energetic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4e5f336d31346d9e60d6c9f166b2b1a
https://doi.org/10.1016/0167-9317(91)90069-p
https://doi.org/10.1016/0167-9317(91)90069-p
Autor:
S. J. Kirch, D. E. Seeger
Publikováno v:
Applied Physics Letters. 57:49-51
Ion beam induced deposition of carbon films has been studied as a function of temperature and pressure for both 2‐bromo vinyl benzene and 2‐bromo ethyl benzene. In contrast to recently published results involving vinyl and ethyl benzene, depositi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8354d94b20299d03f3baacd376dc120f
https://doi.org/10.1063/1.104100
https://doi.org/10.1063/1.104100
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 8:1763
Proximity effects can be reduced when exposing x‐ray mask membranes by increasing the electron‐beam accelerating voltage. Forward scattering in the resist is reduced and exposure due to backscattered electrons is also reduced since the more energ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2800919b747c688ac7d29f1dd982841a
https://doi.org/10.1116/1.585155
https://doi.org/10.1116/1.585155
Autor:
D. E. SEEGER, J. A. BERSON
Publikováno v:
Chemischer Informationsdienst. 14
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c836fd1ab15b27a3c34596b04e3ee96b
https://doi.org/10.1002/chin.198345117
https://doi.org/10.1002/chin.198345117
Publikováno v:
Chemischer Informationsdienst. 12
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::560c66fecb846a7a6eaf797120595909
https://doi.org/10.1002/chin.198121132
https://doi.org/10.1002/chin.198121132
Autor:
D. E. Seeger, M. G. Rosenfield
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 6:399
An increasingly important problem in various lithographies is accurate alignment. Detection of alignment marks can be obscured by different resist coatings covering the marks. To circumvent this problem, a technique has been developed to clear resist
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4c2b70abeba704477176c3242dc5e8fb
https://doi.org/10.1116/1.583962
https://doi.org/10.1116/1.583962