Zobrazeno 1 - 3
of 3
pro vyhledávání: '"D. E. Arbenin"'
Publikováno v:
Тонкие химические технологии, Vol 4, Iss 2, Pp 61-66 (2009)
The algorithm was worked out, witch allows to define obtained GaAs-based layers characteristics and the most significant epitaxy process technological parameters on the base of half-empiric dependences, if MOCVD process carriage conditions are known.
Externí odkaz:
https://doaj.org/article/184953b438d24561b79cdbf28732d62f
Publikováno v:
Inorganic Materials. 46:1-5
We present semiempirical relations that quantify the influence of metalorganic vapor phase epitaxy (MOVPE) conditions on the parameters of GaAs-based epitaxial layers. These relations have been used to create a MOVPE training simulator system.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fed95e8bcb41dbf497c8905a01931d98
https://doi.org/10.1134/s0020168510010012
https://doi.org/10.1134/s0020168510010012
Publikováno v:
Inorganic Materials. 44:1278-1284
A program package is developed for simplex-lattice-design processing of the data on etching of solid systems in multicomponent etchants. The procedure suggested is implemented in studying the processes of etching of metallization layers on GaAs/Al x
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::981b9364f3e58989758600a6ef8d7b9c
https://doi.org/10.1134/s0020168508120029
https://doi.org/10.1134/s0020168508120029