Zobrazeno 1 - 10
of 39
pro vyhledávání: '"D. Drygiannakis"'
Publikováno v:
Microbiologia Medica, Vol 21, Iss 3 (2006)
Externí odkaz:
https://doaj.org/article/0ab43633780f4e978a706866ee28f7c4
Autor:
Sotirios E. Kakabakos, D. Drygiannakis, Dimitrios Goustouridis, Konstantinos Misiakos, Panagiota S. Petrou, Ioannis Raptis, Georgios Koukouvinos
Publikováno v:
Sensors and Actuators B: Chemical. 209:1041-1048
A label-free immunosensor based on white-light reflectance spectroscopy for the determination of total- and free-PSA in human serum is presented. The sensor consists of a silicon die with an overlayer of transparent material. Thermally grown silicon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de698742427eac0d0305f79ad0032dfc
https://doi.org/10.1016/j.snb.2014.11.104
https://doi.org/10.1016/j.snb.2014.11.104
Publikováno v:
European Polymer Journal. 46:1988-1999
Polymeric photosensitive materials due to their vital role as imaging films in lithography should have low line-edge roughness (LER) in order to assist in continuous device shrinking. Through stochastic 2 dimensional simulations, it is indicated that
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ca6fa64393b9eba7076a91c2aa696b44
https://doi.org/10.1016/j.eurpolymj.2010.07.002
https://doi.org/10.1016/j.eurpolymj.2010.07.002
Publikováno v:
Microelectronic Engineering
Modeling the lithography process with stochastic principles enables the consideration of resist material and process effects variability on critical dimensions and line-edge or line-width roughness of printed features. These principles are applied fo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7b4b08b82f39ea1fb2eea44986fcb997
https://doi.org/10.1016/j.mee.2009.11.122
https://doi.org/10.1016/j.mee.2009.11.122
Publikováno v:
Microelectronic Engineering. 85:955-958
Resist film thickness is anticipated to be 60nm in the 22nm technology node setting significant processing challenges due to resist non-bulk behavior. The changes in the dissolution rate of a positive DUV polymer based chemically amplified resist due
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::85fb2cbc0449db747f86a786cd95c903
https://doi.org/10.1016/j.mee.2007.12.071
https://doi.org/10.1016/j.mee.2007.12.071
Autor:
N. Tsikrikas, George Kokkoris, George P. Patsis, Andreas G. Boudouvis, D. Drygiannakis, Evangelos Gogolides, Panagiotis Argitis, Ioannis Raptis
Publikováno v:
Microelectronic Engineering. 85:949-954
Experiments and simulations suggest that low-molecular-weight resist materials could result in low line-edge roughness (LER) which is a critical parameter for the forthcoming technology nodes. Two positive molecular resist architectures are modeled w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ecc416aa93a0db2e7cbfaf35652cfdb
https://doi.org/10.1016/j.mee.2007.12.072
https://doi.org/10.1016/j.mee.2007.12.072
Autor:
Dimitra Niakoula, Panagiotis Argitis, George P. Patsis, Elias A. Couladouros, Veroniki P. Vidali, Ioannis Raptis, D. Drygiannakis, Evangelos Gogolides
Publikováno v:
Microelectronic Engineering. 84:1062-1065
The influence of resist molecular weight as well as its architecture becomes important in lithographic scales aiming at sub-45nm resolution. The effects of processing and resist molecular geometry on line-edge roughness (LER) should be well understoo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::20dda611308fcbffaff08cd9e2c3b799
https://doi.org/10.1016/j.mee.2007.01.044
https://doi.org/10.1016/j.mee.2007.01.044
Publikováno v:
Microelectronic Engineering
Macroscopic photoresist processing simulation tools are combined with mesoscopic stochastic simulations in order to enable quantification of the discrete composition of the photoresist material. The effect of degree of polymerization of the polymer 2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ac6e710fc9add5b84ab6d73895616790
Publikováno v:
SPIE Proceedings.
Strong candidate lithography for the mass production of devices at the 32nm technology node and beyond is extreme ultra violet lithography (EUVL). The mask used in EUVL is a complex set of layers. The material composition and thickness of each layer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ff13c7a637e55533e9f04d051ecac27f
https://doi.org/10.1117/12.769392
https://doi.org/10.1117/12.769392
Autor:
George P. Patsis, Stelios Stavroulakis, Emmanuel Voyiatzis, Ioannis Raptis, D. Drygiannakis, Nikolaos Tsikrikas
Publikováno v:
SPIE Proceedings.
The whole process of stochastic lithography simulation combined with an electron-beam exposure pattern convolution module, could be useful in the validation of design rules taking into account fine details such as line-edge roughness, and for simulat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f727ad7eb40f6093017ac2c213cf4687
https://doi.org/10.1117/12.708858
https://doi.org/10.1117/12.708858