Zobrazeno 1 - 10 of 26 pro vyhledávání: '"D. Dominijanni"'
2
MESFETs on H-terminated polycrystalline diamond
Autor: P. CALVANI, F. SINISI, ROSSI, Maria Cristina, D. DOMINIJANNI, E. GIOVINE, E. LIMITI, DOI . ULIS, CONTE, Gennaro
Publikováno v: info:cnr-pdr/source/autori:Calvani, P.; Sinisi, F.; Rossi, M. C.; Conte, G.; Giovine, E.; Ciccognani, W.; Limiti, E./congresso_nome:10th International Conference on ULtimate Integration of Silicon, ULIS 2009/congresso_luogo:/congresso_data:18-20%2F03%2F2009/anno:2009/pagina_da:257/pagina_a:260/intervallo_pagine:257–260
info:cnr-pdr/source/autori:P. Calvani (1), F. Sinisi (1), M.C. Rossi (1), G. Conte (1), E. Giovine (2), W. Ciccognani (3), E. Limiti (3)/congresso_nome:10th International Conference on Ultimate Integration on Silicon/congresso_luogo:Aachen, GERMANY/congresso_data:MAR 18-20, 2009/anno:2009/pagina_da:257/pagina_a:260/intervallo_pagine:257–260
Metal-Semiconductor Field Effect Transistors (MESFETs) were fabricated on polycrystalline diamond. Devices were realized to be employed in Microwave Integrated Circuits for satellite communications and high frequency power amplification, areas were d
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7b457118799fdfff46a995b7d2b4aea4
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3
Fabrication of Schottky diodes for terahertz imaging
Autor: Ennio Giovine, R. Casini, Andrea Notargiacomo, Vittorio Foglietti, D. Dominijanni, Michele Ortolani
Publikováno v: Microelectronic engineering 88 (2011): 2544–2546. doi:10.1016/j.mee.2011.02.107
info:cnr-pdr/source/autori:E. Giovine, R. Casini, D. Dominijanni, A. Notargiacomo, M. Ortolani, V. Foglietti/titolo:Fabrication of Schottky diodes for terahertz imaging/doi:10.1016%2Fj.mee.2011.02.107/rivista:Microelectronic engineering/anno:2011/pagina_da:2544/pagina_a:2546/intervallo_pagine:2544–2546/volume:88
In this paper we present design, fabrication and characterization of Schottky terahertz diodes. The diode is based on a Ti/n-GaAs junction with very low junction capacitance. T-gate technology, based on trilayer of electronic resists and electron-bea
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1c46c9e5cb3b491576342c1a01b1110d
https://doi.org/10.1016/j.mee.2011.02.107
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4
Fabrication and quantitative comparison of quasi-optical terahertz rectifiers with integrated antennas
Autor: Michele Ortolani, P. Romanini, Vittorio Foglietti, Ennio Giovine, Florestano Evangelisti, D. Dominijanni, R. Casini, A. Di Gaspare, Marco Peroni
Publikováno v: 36th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), Houston, TX, 02-07/10/2011
info:cnr-pdr/source/autori:Di Gaspare, A.; Casini, R.; Ortolani, M.; Giovine, E.; Foglietti, V.; Romanini, P.; Dominijanni, D.; Peroni, M.; Evangelisti, F./congresso_nome:36th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)/congresso_luogo:Houston, TX/congresso_data:02-07%2F10%2F2011/anno:2011/pagina_da:/pagina_a:/intervallo_pagine
IEEE Proc. of IR, milli. and THz Waves IRMMW-THz, 2011
info:cnr-pdr/source/autori:A. Di Gaspare, R. Casini, M. Ortolani, E. Giovine, V. Foglietti, P. Romanini, D. Dominijanni, M. Peroni, F. Evangelisti/congresso_nome:, IEEE Proc. of IR, milli. and THz Waves IRMMW-THz/congresso_luogo:/congresso_data:2011/anno:2011/pagina_da:/pagina_a:/intervallo_pagine
We fabricated GaAs air-bridge Schottky diodes and pseudomorphic InGaAs/AlGaAs heterostructure field-effect transistors with similar on-chip lithographic antennas. Detectors were packaged with a silicon lens and their rectified signal when exposed to
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8edb84af8974182451502d2b04f21b6c
http://www.scopus.com/record/display.url?eid=2-s2.0-84855879373&origin=inward
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5
Quasi-optical terahertz detectors based on compound semiconductor heterostructures
Autor: M. Ortolani (1), R. Casini (1), A. Di Gaspare (1), E. Giovine (1), V. Foglietti (1), F. Evangelisti (1), M. Peroni (2), D. Dominijanni (1), P. Romanini (2), C. Lanzieri (2), A. Cetronio (2)
Publikováno v: Documentation des 6es Journées Francaises du Terahertz., La Grande Motte, Montpellier, 2011
info:cnr-pdr/source/autori:M. Ortolani (1), R. Casini (1), A. Di Gaspare (1), E. Giovine (1), V. Foglietti (1), F. Evangelisti (1), M. Peroni (2), D. Dominijanni (1), P. Romanini (2), C. Lanzieri (2), A. Cetronio (2)/congresso_nome:Documentation des 6es Journées Francaises du Terahertz./congresso_luogo:La Grande Motte, Montpellier,/congresso_data:2011/anno:2011/pagina_da:/pagina_a:/intervallo_pagine
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=cnr_________::63b15c3785b1d08cc836428e6e4fb0aa
http://www.cnr.it/prodotto/i/81672
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6
Dual step EBL Gate fabrication technology for GaN-HEMT wideband applications
Autor: D. Dominijanni, P. Romanini, E. Giovine, Antonio Nanni, A. Pantellini, Marco Peroni, Andrea Notargiacomo
Publikováno v: Microelectronic engineering 88 (2011): 1927–1930. doi:10.1016/j.mee.2011.02.064
info:cnr-pdr/source/autori:D. Dominijanni (1), E. Giovine (1), A. Notargiacomo (1), A. Pantellini (2), P. Romanini (2), M. Peroni (2), A. Nanni (2)/titolo:Dual step EBL Gate fabrication technology for GaN-HEMT wideband applications/doi:10.1016%2Fj.mee.2011.02.064/rivista:Microelectronic engineering/anno:2011/pagina_da:1927/pagina_a:1930/intervallo_pagine:1927–1930/volume:88
The operation at frequencies above 100 GHz of electronic devices like transistors has been achieved both by using high electron mobility III-V semiconductor materials or heterostructures and by implementing fabrication techniques which strongly reduc
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0ac82d551c4d49d66c314de958d3b9df
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7
Fabrication of planar sub-micron Schottky diodes for terahertz imaging applications
Autor: Arnaldo D'Amico, Michele Ortolani, F. Gatta, Vittorio Foglietti, D. Dominijanni, Ennio Giovine, R. Casini
Publikováno v: 15th Italian Conference on Sensors and Microsystems, AISEM 2010, pp. 247–251, 08-10/02/2010
info:cnr-pdr/source/autori:Gatta, Francesco; Casini, Roberto; D'Amico, Arnaldo; Ortolani, Michele; Giovine, Ennio; Dominijanni, Donatella; Foglietti, Vittorio/congresso_nome:15th Italian Conference on Sensors and Microsystems, AISEM 2010/congresso_luogo:/congresso_data:08-10%2F02%2F2010/anno:2011/pagina_da:247/pagina_a:251/intervallo_pagine:247–251
Lecture Notes in Electrical Engineering ISBN: 9789400713239
Imaging sensors employing sub-millimeter waves and terahertz radiation (frequencies from 100 to 3000 GHz) are needed for security applications requiring stand-off, non-destructive sensing, due to its much larger penetration depth into dielectric mate
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::729bf4bf1d3aeb6d548694db30752f0e
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8
Trilayer Electron-beam Lithography and surface preparation for sub-micron Schottky contacts on GaAs heterostructures
Autor: P. Romanini, Marco Peroni, Ennio Giovine, D. Dominijanni, Vittorio Foglietti, Andrea Notargiacomo, R. Casini, Michele Ortolani, Claudio Lanzieri
Publikováno v: 35th International Conference on Infrared, Millimeter and Terahertz Waves, 05-10/09/2013
info:cnr-pdr/source/autori:Dominijanni, D.; Casini, R.; Foglietti, V.; Ortolani, M.; Notargiacomo, A.; Lanzieri, C.; Peroni, M.; Romanini, P.; Giovine, E./congresso_nome:35th International Conference on Infrared, Millimeter and Terahertz Waves/congresso_luogo:/congresso_data:05-10%2F09%2F2013/anno:2010/pagina_da:/pagina_a:/intervallo_pagine
Foreseen operation at sub-THz frequencies of Schottky contacts for diodes and transistor gates on GaAs based heterostructures requires area reduction down to 0.1×1 microns, and wet chemical processes. We report on the compatibility of Trilayer Elect
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d9d884e66f2ca5730c014b4a1ac67d7f
https://doi.org/10.1109/icimw.2010.5612783
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9
AlGaN/GaN Heterostructure Transistors for the Generation and Detection of THz Radiation
Autor: Ennio Giovine, Florestano Evangelisti, Emilio Giovenale, D. Dominijanni, Claudio Lanzieri, Andrea Doria, A. Di Gaspare, Michele Ortolani, Ivan Spassovsky, Antonio Cetronio, Marco Peroni, Gian Piero Gallerano, Vittorio Foglietti
Publikováno v: IEEE Proc. of the 35th international conference on infrared millimetre and terahertz waves IRMMW-THz 2010, 2010
info:cnr-pdr/source/autori:E. Giovine, A. Di Gaspare, M. Ortolani, F. Evangelisti, V. Foglietti, A. Cetronio, D. Dominijanni, C. Lanzieri, M. Peroni, A. Doria, E. Giovenale, I. Spassovsky, G.P. Gallerano/congresso_nome:IEEE Proc. of the 35th international conference on infrared millimetre and terahertz waves IRMMW-THz 2010/congresso_luogo:/congresso_data:2010/anno:2010/pagina_da:/pagina_a:/intervallo_pagine
35th International Conference on Infrared, Millimeter and Terahertz Waves, 05-10/09/2010
info:cnr-pdr/source/autori:Giovine, E.; Di Gaspare, A.; Ortolani, M.; Evangelisti, F.; Foglietti, V.; Cetronio, A.; Dominijanni, D.; Lanzieri, C.; Peroni, M.; Doria, A.; Giovenale, E.; Spassovsky, I.; Gallerano, G. P./congresso_nome:35th International Conference on Infrared, Millimeter and Terahertz Waves/congresso_luogo:/congresso_data:05-10%2F09%2F2010/anno:2010/pagina_da:/pagina_a:/intervallo_pagine
The AlGaN/GaN heterostructure is an excellent candidate for the realization of sub-millimeter wave power amplifiers, which can serve as integrated power source for THz frequency multipliers. Here we discuss the operation of AlGaN/GaN transistors as T
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e63641e8ee2b0f0b907c0bbec0b2c71c
http://www.cnr.it/prodotto/i/172104
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10
RF Power Performance Evaluation of Surface Channel Diamond MESFET
Autor: Gennaro Conte, D. Dominijanni, E. Giovine, Ernesto Limiti, Paolo Calvani, B Pasciuto, Giovanni Ghione, Vittorio Camarchia, Maria Cristina Rossi, Federica Cappelluti
Publikováno v: 1203 (2010).
info:cnr-pdr/source/autori:M.C. Rossi, P. Calvani, G. Conte, V. Camarchia, F. Cappelluti, G. Ghione, B. Pasciuto, E. Limiti, D. Dominijanni, E. Giovine/titolo:RF Power Performance Evaluation of Surface Channel Diamond MESFET/doi:/rivista:/anno:2010/pagina_da:/pagina_a:/intervallo_pagine:/volume:1203
We experimentally investigate the large-signal radio frequency performances of surface-channel p-type diamond MESFETs fabricated on hydrogenated polycrystalline diamond. The devices under examination have a coplanar layout with two gate fingers, tot
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::718521df29110b016c7801378847de82
http://www.cnr.it/prodotto/i/171659
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