Zobrazeno 1 - 10
of 13
pro vyhledávání: '"D. Davito"'
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 8:79-83
We report a procedure for fabricating Ga/sub 1-x/Al/sub x/As-GaAs heterojunction bipolar transistors with a single Al-Ge-Ni metallization step for rapid material analysis. Al-Ge-Ni produces an excellent ohmic contact to both n- and p-type GaAs, and e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e49bbd8b4bd0bd530b591d5fd22ef7d2
https://doi.org/10.1109/66.350760
https://doi.org/10.1109/66.350760
Publikováno v:
Journal of The Electrochemical Society. 140:1450-1453
We report the results of preliminary investigations into the suitability of the metallization system, aluminum-tin-nickel, as an ohmic contact to both p-type and n-type GaAs. We have found that the Al-Sn-Ni contact is similar to Al-Ge-Ni in that it m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::959d5b3bdbd1c40c0ceb8026802c38c1
https://doi.org/10.1149/1.2221577
https://doi.org/10.1149/1.2221577
Publikováno v:
1993 IEEE MTT-S International Microwave Symposium Digest.
The large-signal performance of GaInP/GaAs HBTs (heterojunction bipolar transistors) at X-band is reported on. A CW (continuous wave) output power of 1.0 W is obtained from a GaInP/GaAs HBT consisting of ten 2- mu m*30- mu m emitter fingers, correspo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f8e82a5439a72fce8e4ceb90eeb63383
https://doi.org/10.1109/mwsym.1993.276861
https://doi.org/10.1109/mwsym.1993.276861
Publikováno v:
IEEE Transactions on Electron Devices. 40:1351-1353
The temperature dependences of current gain are investigated for both GaInP/GaAs and AlGaAs/GaAs heterojunction bipolar transistors (HBTs). Measured results indicate that for GaInP/GaAs HBTs the current gain at collector current densities >0.1 A/cm/s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b52514f39e4310932b67f906aa6d6be5
https://doi.org/10.1109/16.216446
https://doi.org/10.1109/16.216446
Publikováno v:
IEEE Electron Device Letters. 14:176-178
The microwave performance of a self-aligned GaInP/GaAs heterojunction bipolar transistor (HBT) is presented. At an operating current density of 2.08*10/sup 4/ A/cm/sup 2/, the measured cutoff frequency is 50 GHz and the maximum oscillation frequency
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::390a39a63fffc9863fee20a54c4c3284
https://doi.org/10.1109/55.215159
https://doi.org/10.1109/55.215159
Publikováno v:
Electronics Letters. 28:2341-2343
High gain (β = 175) 3 × 10 & μm2 GaInP &GaAs HBTs fabricated using a triple mesa etched non-selfaligned process are reported. The devices show a current gain of 46 even at a collector current of 1 μA. Microwave measurements indicate the devices h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5cc89a00507961668ff0d5c12d3879ca
https://doi.org/10.1049/el:19921509
https://doi.org/10.1049/el:19921509
Autor:
W. West, J. Barrette, D. Davito, Robert C. Fitch, B. Bayraktaroglu, R. Neidhard, L. Kehias, R. Scherer, M.P. Mack
Publikováno v:
Electronics Letters. 29:1068
The first high power demonstration of an InGaP/GaAs heterojunction bipolar transistor is presented. Multifinger selfaligned HBTs were tested at 3 GHz. A maximum output power of 2.82 W CW was obtained for a 600 μm2 emitter area device (4.7 mW/μm2 po
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cf90272f99e49a9f2f2dbff6a1c277b6
https://doi.org/10.1049/el:19930713
https://doi.org/10.1049/el:19930713
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.