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pro vyhledávání: '"D. DONETSKY"'
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Autor:
Gela Kipshidze, D. Donetsky, Gregory Belenky, Jinghe Liu, Kevin Kucharczyk, Stefan P. Svensson
Publikováno v:
Conference on Lasers and Electro-Optics.
We describe an nBp structure comprised of waveguide with gratings for electronic steering a 10.6-µm laser and show that a 0.06 change of the refractive index by carrier injection leads to a 3.5° steering angle.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a37ff8acb3697e3ec70296c9094c43ca
https://doi.org/10.1364/cleo_at.2021.jtu3a.51
https://doi.org/10.1364/cleo_at.2021.jtu3a.51
Publikováno v:
Journal of Vacuum Science & Technology B. 38:032206
The composition of III–V semiconductor alloys with multiple group V elements results from a complex interaction of each group V species with each other and with group IIIs. Molecular beam epitaxy growth conditions, such as the group V absolute flux
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6c22b2679735347e9d9f1616bbf7309a
https://doi.org/10.1116/1.5145066
https://doi.org/10.1116/1.5145066
Autor:
Eli Stavitski, Bin Cheng, D. Donetsky, Igor Lubomirsky, Harishchandra Singh, Jian Liu, Anatoly I. Frenkel, Jason R. Trelewicz, Klaus Attenkofer
Publikováno v:
The Review of scientific instruments. 89(4)
We report the development, testing, and demonstration of a setup for modulation excitation spectroscopy experiments at the Inner Shell Spectroscopy beamline of National Synchrotron Light Source - II. A computer algorithm and dedicated software were d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::725b725518d985c1ded9762c2ce55dca
https://pubmed.ncbi.nlm.nih.gov/29716373
https://pubmed.ncbi.nlm.nih.gov/29716373
Autor:
D. Donetsky, Gregory Belenky, Wendy L. Sarney, Youxi Lin, D. Wang, Harry Hier, Stefan P. Svensson
Publikováno v:
Journal of Electronic Materials. 43:3184-3190
Minority carrier lifetimes in undoped and Beryllium-doped Type-2 Ga-free, InAs/InAsSb strained layer superlattices (SLS) with energy gaps as low as 0.165 eV were determined from photoluminescence kinetics. The minority carrier lifetime of 450 ns at 7
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cc96a9d9b9eda1889c04ce39de6f1d49
https://doi.org/10.1007/s11664-014-3239-6
https://doi.org/10.1007/s11664-014-3239-6
Autor:
Wendy L. Sarney, Jinghe Liu, D. Donetsky, Stefan P. Svensson, Leon Shterengas, Gregory Belenky, Gela Kipshidze
Publikováno v:
Applied Physics Letters. 115:081102
We demonstrate the strong modulation of the long wave infrared transmission of GaInSb/InAsSb/AlInAsSb heterostructures under carrier injection. This results in the population of states in the conduction band of the narrow-gap layer and changes the ab
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f2c67912e22a1adf917dda848695bf4f
https://doi.org/10.1063/1.5111980
https://doi.org/10.1063/1.5111980
Autor:
Stefan P. Svensson, Gregory Belenky, Sergey Suchalkin, W. A. Beck, D. Donetsky, Wendy L. Sarney
Publikováno v:
Applied Physics Letters. 114:122102
InAsSb is the only direct-bandgap III–V compound semiconductor alloy that absorbs and emits light over the entire long-wavelength infrared band (8–12 micron). We measured its free electron concentration and mobility as a function of temperature i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7ed8d17631ac65df0ecd29d738395e54
https://doi.org/10.1063/1.5081120
https://doi.org/10.1063/1.5081120
Autor:
Leon Shterengas, Wendy L. Sarney, D. Donetsky, Gregory Belenky, Gela Kipshidze, Youxi Lin, Stefan P. Svensson, D. Wang
Publikováno v:
Journal of Crystal Growth. 425:357-359
Growth of unrelaxed and unstrained Al z In 1− z As y Sb 1− y with a lattice constant=6.23 A was demonstrated. InAs 1- x Sb x with this lattice constant produces a bandgap corresponding to absorption in the long-wavelength infrared range. The stru
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0d13ced980e37d3e389446e58562a7ef
https://doi.org/10.1016/j.jcrysgro.2015.02.036
https://doi.org/10.1016/j.jcrysgro.2015.02.036
Publikováno v:
Journal of Electronic Materials. 41:3027-3030
Minority carrier lifetime in long-wave infrared (LWIR) type II InAs/GaSb superlattices was studied using the optical modulation response (OMR) technique in wide ranges of excitation and temperature. The measured carrier lifetime was found to increase
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::075e7c3cee64529fe408cdc2bb291f0e
https://doi.org/10.1007/s11664-012-2216-1
https://doi.org/10.1007/s11664-012-2216-1
Publikováno v:
Journal of Applied Physics. 124:035304
This work describes a thorough investigation of the structural properties of intended binary InAs/InSb strained layer superlattices (SLS) on GaSb substrates for infrared detection. The designed periods were as short as possible, with the InSb layers
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e4fdb52dce6c02a97519741eac25d52c
https://doi.org/10.1063/1.5029328
https://doi.org/10.1063/1.5029328