Zobrazeno 1 - 10
of 10
pro vyhledávání: '"D. D. Rathman"'
Publikováno v:
IEEE Transactions on Electron Devices. 51:864-869
The dynamic response of an electronically shuttered charge-coupled device (CCD) imager to nanosecond voltage pulses has been investigated. Measurements show that the shutter can be dynamically opened and closed in nanosecond times. For the shutter op
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2ef7dd8fa4236b4c8bb9e0eb282a3e5d
https://doi.org/10.1109/ted.2004.828168
https://doi.org/10.1109/ted.2004.828168
Autor:
T. Perry, Robert K. Reich, Douglas J. Young, M. D. Ulibarri, R. A. Murphy, Scott Watson, R. M. Osgood, D. D. Rathman, Michael Rose, A. H. Loomis, B. B. Kosicki, D.M. O'Mara, E. J. Kohler, Robert Berger
Publikováno v:
Review of Scientific Instruments. 74:2027-2031
Electronically shuttered solid-state imagers are being developed for high-speed imaging applications. A 5 cm×5 cm, 512×512-element, multiframe charge-coupled device (CCD) imager has been fabricated for the Los Alamos National Laboratory DARHT facil
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d2f673741913f6091061056d94ce642
https://doi.org/10.1063/1.1535250
https://doi.org/10.1063/1.1535250
Publikováno v:
Applied Physics Letters. 66:1147-1149
The variation of electric field gradient above arrays of field emission cathodes has been investigated using atomic force microscopy. The spatial distribution of electric field gradient was obtained as a function of bias and height. Results show a pa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac94b336a3b5d0604d88bb1028d84ba5
https://doi.org/10.1063/1.113841
https://doi.org/10.1063/1.113841
Publikováno v:
Journal of The Electrochemical Society. 129:2303-2306
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::192705ad518efc6121d70c00ed8dae2c
https://doi.org/10.1149/1.2123499
https://doi.org/10.1149/1.2123499
Publikováno v:
Journal of Applied Physics. 54:3272-3277
Surface damage in Si substrates created by Ar‐ion milling or by reactive‐ion etching in CF4, CHF3, Cl2, SiCl4, or SiF4 has been investigated. Metal‐oxide‐semiconductor capacitors were fabricated on the etched Si substrates, and the interface
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e683bf1f2b333cf421e9d5797876e3e
https://doi.org/10.1063/1.332437
https://doi.org/10.1063/1.332437
Autor:
D. D. Rathman, T. F. Deutsch
Publikováno v:
Applied Physics Letters. 45:623-625
ArF excimer laser radiation has been used to deposit W films on silicon and on SiO2 by initiating the gas phase reaction of WF6 with H2. Deposition rates >100 nm/min and film resistivities as low as two times the bulk value have been obtained at depo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::81a8c6f7164fcc64e70c49bcc2c2d6dd
https://doi.org/10.1063/1.95333
https://doi.org/10.1063/1.95333
Publikováno v:
Applied Physics Letters. 39:825-827
The electrical properties of single‐crystal and amorphous Si, doped using a pulsed UV laser, have been studied as a function of laser wavelength and fluence and of UV dose. BCl3 or PCl3 parent gases were used to provide B or P dopant atoms. Dissoci
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::54c3477fb4b484608dc3338c93759358
https://doi.org/10.1063/1.92572
https://doi.org/10.1063/1.92572
Publikováno v:
Applied Physics Letters. 44:223-225
The Si overgrowth of deposited W gratings, which is the most critical step in the fabrication of the overgrown version of the Si permeable base transistor, has been characterized by transmission electron microscopy. At the high temperatures (>1000 °
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::213e6055eb0a7bcbb4ae55f260fc26d7
https://doi.org/10.1063/1.94717
https://doi.org/10.1063/1.94717
Publikováno v:
Extended Abstracts of the 1984 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ae59261a0a926724afef85912de85705
https://doi.org/10.7567/ssdm.1984.b-6-1
https://doi.org/10.7567/ssdm.1984.b-6-1
Publikováno v:
Chemischer Informationsdienst. 14
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::24a2a996f8d6f6df23fa0a5199d77893
https://doi.org/10.1002/chin.198306005
https://doi.org/10.1002/chin.198306005