Zobrazeno 1 - 3
of 3
pro vyhledávání: '"D. D. Krut"'
Autor:
G. S. Glenn, D. D. Krut
Publikováno v:
AIP Conference Proceedings.
Significant progress has been made in the development of high efficiency concentrator technology. This is particularly evident at the laboratory cell level. At the same time high efficiency GaAs cells have been produced for a number of years for spac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::024e878dcc3bc868c6cc5fb18b8de8f2
https://doi.org/10.1063/1.45749
https://doi.org/10.1063/1.45749
Autor:
R. R. King, D. C. Law, K. M. Edmondson, C. M. Fetzer, R. A. Sherif, G. S. Kinsey, D. D. Krut, H. L. Cotal, N. H. Karam
Publikováno v:
2006 IEEE 4th World Conference on Photovoltaic Energy Conference; 2006, p760-763, 4p
Publikováno v:
The Physics and Technology of Amorphous SiO2 ISBN: 9781461283010
The common silicon dopants B, P and As tend to be incorporated in SiO2 as network formers, i.e. they will attempt to occupy Si sites in the glassy oxide structure. The present study deals with dopants introduced by ion implantation. Since the amount
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::71eacff52486a5fa5d9a920106dc3031
https://doi.org/10.1007/978-1-4613-1031-0_30
https://doi.org/10.1007/978-1-4613-1031-0_30
