Zobrazeno 1 - 10
of 98
pro vyhledávání: '"D. D. Edwall"'
Autor:
S. Bhargava, M. Zandian, P. Dreiske, A. Yulius, Daeyeon Lee, A. C. Chen, M. Carmody, W. E. Tennant, D. D. Edwall, E. Piquette
Publikováno v:
Journal of Electronic Materials. 45:4587-4595
We review recent advances in the HgCdTe material quality and detector performance achieved at Teledyne using molecular beam epitaxy growth and the double-layer planar hetero-junction (DLPH) detector architecture. By using an un-doped, fully depleted
Autor:
Daeyeon Lee, D. D. Edwall, M. Carmody, J. K. Markunas, J. M. Arias, D. Benson, R. N. Jacobs, Andrew J. Stoltz, A. Almeida, E. Piquette, A. Yulius
Publikováno v:
Journal of Electronic Materials. 41:2719-2724
Alternate substrates for molecular beam epitaxy growth of HgCdTe including Si, Ge, and GaAs have been under development for more than a decade. MBE growth of HgCdTe on GaAs substrates was pioneered by Teledyne Imaging Sensors (TIS) in the 1980s. Howe
Autor:
J. M. Arias, Jacob B. Khurgin, Curtis Billman, R. DeWames, Patrick Maloney, Daeyeon Lee, D. D. Edwall, Joseph G. Pellegrino
Publikováno v:
Journal of Electronic Materials. 41:2785-2789
This paper correlates measurements of minority carrier lifetime using photoconductivity transient or photoconductive decay (PCD) with measurements and analysis of current–voltage (I–V) on P + n photodiodes of the same layer. This analysis is done
Autor:
Whitney Mason, Yuanping Chen, S. Freeman, R. N. Jacobs, D. D. Edwall, Jose M. Arias, E. Piquette, M. Kangas, Andrew J. Stoltz, J. G. Pasko, M. Carmody, Nibir K. Dhar
Publikováno v:
Journal of Electronic Materials. 37:1184-1188
The use of silicon as an alternative substrate to bulk CdZnTe for epitaxial growth of HgCdTe for infrared detector applications is attractive because of potential cost savings as a result of the large available sizes and the relatively low cost of si
Autor:
Yuanping Chen, Nibir K. Dhar, M. Carmody, D. D. Edwall, L. A. Almeida, Jose M. Arias, John H. Dinan, R. N. Jacobs, M. Groenert, Jon Ellsworth, G. Brill
Publikováno v:
Journal of Electronic Materials. 36:1098-1105
It has been reported that the basic electrical properties of n-type long wave length infrared (LWIR) HgCdTe grown on silicon, including the majority carrier mobility (μ e) and minority carrier lifetime (τ), are qualitatively comparable to those rep
Autor:
William W. Bewley, William E. Tennant, D. D. Edwall, M. L. Thomas, James R. Lindle, E. Piquette, Igor Vurgaftman, Jerry R. Meyer
Publikováno v:
Journal of Electronic Materials. 36:988-992
We used an InSb radiometric thermal imager to characterize the performance of 1″ × 1″ negative luminescent (NL) arrays. The devices grown on both CdZnTe (two arrays) and silicon (three arrays) as substrates have cut-off wavelengths ranging from
Autor:
U. Lee, M. Martinka, J. D. Benson, M. Carmody, L. A. Almeida, R. N. Jacobs, J. K. Markunas, D. D. Edwall
Publikováno v:
Journal of Electronic Materials. 36:949-957
The as-grown molecular beam epitaxy (MBE) (211)B HgCdTe surface has variable surface topography, which is primarily dependent on substrate temperature and substrate/epilayer mismatch. Nano-ripple formation and cross-hatch patterning are the predomina
Autor:
T. D. Golding, L. Wang, H. O. Sankur, L. O. Bubulac, D. D. Edwall, W. Zhao, John H. Dinan, R. Hellmer, M. Carmody
Publikováno v:
Journal of Electronic Materials. 35:1465-1469
Preliminary results of a study of the hydrogenation of HgCdTe epilayers grown by molecular beam epitaxy on Si substrates using a glow-discharge plasma are presented. The aim of the program is to employ H to passivate the detrimental opto-electronic e
Publikováno v:
Journal of Electronic Materials. 35:1346-1349
Characterization data are presented for arsenic-doped Hg1−xCdxTe epilayers, grown on CdZnTe substrates by molecular beam epitaxy. Arsenic incorporation is influenced both by the cracker-cell bulk temperature (As flux) and by the substrate surface t
Autor:
G. Brill, John H. Dinan, Jose M. Arias, L. A. Almeida, Yuanping Chen, J. G. Pasko, Robert B. Bailey, Nibir K. Dhar, M. Carmody, D. D. Edwall, M. Groenert
Publikováno v:
Journal of Electronic Materials. 35:1417-1422
We have fabricated a series of 256 pixel×256 pixel, 40 µm pitch LWIR focal plane arrays (FPAs) with HgCdTe grown on (211) silicon substrates using MBE grown CdTe and CdSeTe buffer layers. The detector arrays were fabricated using Rockwell Scientifi