Zobrazeno 1 - 10
of 229
pro vyhledávání: '"D. Crotti"'
Autor:
Y. C. Wu, W. Kim, S. Couet, K. Garello, S. Rao, S. Van Beek, S. Kundu, S. Houshmand Sharifi, D. Crotti, J. Van Houdt, G. Groeseneken, G. S. Kar
Publikováno v:
AIP Advances, Vol 10, Iss 3, Pp 035123-035123-5 (2020)
We study the characteristics of the precessional switching induced by voltage control of magnetic anisotropy (VCMA) in back-end-of-line (BEOL)-compatible perpendicular magnetic tunnel junction devices. Using micromagnetic simulation, we find three op
Externí odkaz:
https://doaj.org/article/dd260e04e0e84387bef005299e24d09d
Publikováno v:
Microbiologia Medica, Vol 22, Iss 3 (2007)
Externí odkaz:
https://doaj.org/article/b42232522d7b4d94921c5f5b0989dd16
Publikováno v:
Microbiologia Medica, Vol 21, Iss 3 (2006)
Externí odkaz:
https://doaj.org/article/203979e8ee3f457084dbf602950be439
Publikováno v:
Microbiologia Medica, Vol 21, Iss 3 (2006)
Externí odkaz:
https://doaj.org/article/2a227f8669c44d70afbe87c53f87ba30
Autor:
F. Bernieri, L. Merlino, M. Agnello, A. Buratta, M. Borsotti, M. Quercioli, R. Rossetti, D. Crotti
Publikováno v:
Microbiologia Medica, Vol 19, Iss 2 (2004)
Externí odkaz:
https://doaj.org/article/4616389eb8664dcd93bfab4531ec95ba
Publikováno v:
Microbiologia Medica, Vol 19, Iss 2 (2004)
Externí odkaz:
https://doaj.org/article/d44ccca8f78b4f17987e8706a974a027
Publikováno v:
Giornale di Clinica Nefrologia e Dialisi, Vol 10, Iss 1 (1998)
Abstract non disponibile
Externí odkaz:
https://doaj.org/article/36450b5eb69049769cb6b6152672ca9f
Publikováno v:
Giornale di Clinica Nefrologia e Dialisi, Vol 9, Iss 4 (1997)
Abstract non disponibile
Externí odkaz:
https://doaj.org/article/188fcfd712b24f55a3be74f96d316628
Autor:
Siddharth Rao, Sebastien Couet, M. Perumkunnil, Francky Catthoor, Gouri Sankar Kar, Arnaud Furnemont, Sushil Sakhare, D. Crotti, Simon Van Beek
Publikováno v:
IEEE Transactions on Electron Devices. 67:3618-3625
Due to the complexity of device processing, the trade-off between yield and area has resulted in diminishing rate of scaling for the high-density static random access memory (SRAM) cell at advanced CMOS nodes. An introduction of extreme ultraviolet (
Autor:
Gouri Sankar Kar, Kevin Garello, S. Van Beek, M. Perumkunnil, Siddharth Rao, R. Carpenter, D. Crotti, Mohit Kumar Gupta, Y. C. Wu, V. Kateel, F. Yasin, K. K. Vudya Sethu, Sebastien Couet, W. Kim
Publikováno v:
Physical Review Applied
Physical Review Applied, American Physical Society, 2021, 15 (6), ⟨10.1103/PhysRevApplied.15.064015⟩
Physical Review Applied, 2021, 15 (6), ⟨10.1103/PhysRevApplied.15.064015⟩
Physical Review Applied, American Physical Society, 2021, 15 (6), ⟨10.1103/PhysRevApplied.15.064015⟩
Physical Review Applied, 2021, 15 (6), ⟨10.1103/PhysRevApplied.15.064015⟩
International audience; The voltage-gate-assisted spin-orbit-torque (VGSOT) writing scheme combines the advantages from voltage control of magnetic anisotropy (VCMA) and spin-orbit-torque (SOT) effects, enabling multiple benefits for magnetic random-