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Characterization of plasma enhanced chemical vapor deposited SiC and its application in advanced reticle technology–scattering with angular limitation in projection electron beam lithography membrane

Autor: Steven M. Smith, D. Convey, Richard B. Gregory, W. J. Dauksher, S.-I. Han, P. J. S. Mangat

Publikováno v: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 18:1225-1229

In scattering with angular limitation in projection electron beam lithography (SCALPEL) mask technology, the choice of membrane material is an important issue from the perspective of mask performance and manufacturing. Low-pressure chemical vapor dep

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3746cd868d892e8de4c4703ab33433e9
https://doi.org/10.1116/1.582330

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Optical measurement system for characterizing compound semiconductor interface and surface states

Autor: R.N. Legge, M. Passlack, Jonathan K. Abrokwah, D. Convey, Zhiyi Yu

Publikováno v: IEEE Transactions on Instrumentation and Measurement. 47:1362-1366

An optical measurement system that is useful for the characterization of interface and surface states on a wide variety of compound semiconductor material systems has been developed. The PC-based measurement system, using argon ion laser excitation f

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f743b4d4603edb8b002bce45ffa3caeb
https://doi.org/10.1109/19.746611

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Epitaxial PbZr.52Ti.48O3 films on SrTiO3/(001)Si substrates deposited by sol–gel method

Autor: S. M. Smith, D. Convey, T. Eschrich, Jay Curless, S. Voight, Peter Fejes, J. Finder, Zhiyi Jimmy Yu, A. Hooper, K. Eisenbeiser, A. Alec Talin, David Penunuri

Publikováno v: Applied Physics Letters. 81:1062-1064

We report on the sol–gel deposition and characterization of high-quality, epitaxial films of PbZr.52Ti.48O3 (PZT) on (001)Si substrates, with a thickness range of 400 A to 1 μm. The epitaxial growth of PZT on (001)Si is achieved using a thin templ

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::cd7b1dfa77b4035172ad61f7d3d2b357
https://doi.org/10.1063/1.1498006

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Selective formation and alignment of InAs quantum dots over mesa stripes along the [011] and [001] directions on GaAs (100) substrates

Autor: K. Shiralagi, Herbert Goronkin, Ruth Zhang, Raymond K. Tsui, D. Convey

Publikováno v: Applied Physics Letters. 73:505-507

We have studied the selective formation of InAs self-organized quantum dots on top of [001]- and [011]-oriented mesa stripes on patterned GaAs (100) substrates. The GaAs stripes are also grown by selective area epitaxy. The dot density and spatial di

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::278f2f4268ef818eb99a2a386ab6edad
https://doi.org/10.1063/1.121915

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High Spatial Resolution CL Images of ZnO Nanostructures

Autor: J. Xu, J. Liu, D. Convey, D. Yuchi

Publikováno v: Microscopy and Microanalysis. 19:1980-1981

Extended abstract of a paper presented at Microscopy and Microanalysis 2013 in Indianapolis, Indiana, USA, August 4 – August 8, 2013.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::66f83e1e9a30dad38f995f1c5f3e0fc9
https://doi.org/10.1017/s1431927613011896

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A MOCVD reactor safety system for a production environment

Autor: Raymond K. Tsui, Jay Curless, Neal J. Mellen, Eric S. Johnson, D. Convey

Publikováno v: Journal of Crystal Growth. 68:497-501

MOCVD growth of GaAs frequently is accomplished using trimethylgallium and arsine. Although these materials are presently used safely worldwide in a research environment, their hazardous nature is an important consideration in the application of MOCV

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::960add8c619e3b23c13ebb884c772149
https://doi.org/10.1016/0022-0248(84)90456-1

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Arsenic polyps on contacts to GaAs

Autor: Herbert Goronkin, D. Convey

Publikováno v: IEEE Transactions on Electron Devices. 36:600-603

Features resembling polyps composed of As/sub 2/O/sub 3/ observed on GaAs devices under two conditions are discussed. In one case they appear on top of multilayer metal contacts on GaAs and are related to the presence of Au in the contact materials t

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6f653743d80af72d251c789af244cd59
https://doi.org/10.1109/16.19974

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Akademický článek

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Akademický článek

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