Zobrazeno 1 - 10
of 458
pro vyhledávání: '"D. C. TSUI"'
Autor:
Kirk Baldwin, Wei Pan, D. C. Tsui, Michael Lilly, John L. Reno, W. Kang, Ken W. West, Loren Pfeiffer
Publikováno v:
Physical review letters. 124(15)
We report on detailed experimental studies of a high-quality heterojunction insulated-gate field-effect transistor (HIGFET) to probe the particle-hole symmetry of the fractional quantum Hall effect (FQHE) states about half-filling in the lowest Landa
Publikováno v:
Physical Review B. 94
We report in this Rapid Communication an antilevitation behavior of Landau levels in vanishing magnetic fields in a high quality heterojunction insulated-gated field-effect transistor. We found, in the Landau fan diagram of electron density versus ma
Publikováno v:
International Journal of Modern Physics B. 23:2808-2812
We report the results of tilted magnetic field experiments on three high quality wide GaAs quantum wells, with particular emphasis on the N ≥ 1 Landau levels. With an increasing component of in-plane magnetic field, B∥, we observe reentrant behav
Publikováno v:
International Journal of Modern Physics B. 21:1219-1227
We present a fabrication process and results of transport measurements of a number of p-channel heterojunction-insulated-gate field-effect transistors (HIGFETs). Without intentional doping in HIGFETs, the disorder is likely to be less than that in th
Publikováno v:
International Journal of Modern Physics B. 21:1379-1385
Wigner solids in two-dimensional electron systems in high magnetic field B exhibit a striking, microwave or rf resonance, that is understood as a pinning mode. The temperature, Tm, above which the resonance is absent, is interpreted as the melting te
Publikováno v:
Physical Review B. 92
We report measurements of microwave spectra of two-dimensional electron systems hosted in dilute Al alloy ${\mathrm{Al}}_{x}{\mathrm{Ga}}_{1\ensuremath{-}x}\mathrm{As}$ for a range of Landau level fillings $\ensuremath{\nu}$ around 1. For $\ensuremat
We have carried out a systematic study of the tilted magnetic field induced anisotropy at the Landau level filling factor \nu=5/2 in a series of high quality GaAs quantum wells, where the setback distance (d) between the modulation doping layer and t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e7e905a15998b102c5ff0a886662cbb3
http://arxiv.org/abs/1504.00338
http://arxiv.org/abs/1504.00338
Autor:
Loren Pfeiffer, Wei Pan, L. Yin, Ken W. West, Alessandro Serafin, Jian-Sheng Xia, Kirk Baldwin, Neil Sullivan, D. C. Tsui
We present in this Letter the results from two high quality, low density GaAs quantum wells. In sample A of electron density n=5.010 10 cm -2 , anisotropic electronic transport behavior was observed at =7/2 in the second Landau level. We believ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8cfcdc6dd70e3827815393a9a4ccedfd
https://doi.org/10.2172/1177382
https://doi.org/10.2172/1177382
Autor:
C. L. Vicente, D. C. Tsui, Wei Pan, Jian-Sheng Xia, Neil Sullivan, L. N. Pfeiffer, Horst Stormer, Ken W. West, E. D. Adams, Gabor Csathy
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 35:309-314
Recent experiments have shown that two-dimensional electron systems with an externally applied magnetic field are an extremely rich ground for many-body physics. In particular, when only two of the Landau levels (LL) are filled an intricate magnetore