Zobrazeno 1 - 10
of 156
pro vyhledávání: '"D. C. Reynolds"'
Autor:
Antonio Crespo, T. C. Collins, A. Saxler, James K. Gillespie, T.J. Jenkins, J. E. Hoelscher, Cole W. Litton, R.D. Worley, Glen D. Via, D. C. Reynolds, Robert C. Fitch
Publikováno v:
physica status solidi (c). 2:2736-2739
Four (4) unique optical transitions are reported in both the emission and reflection spectra of high-quality AlGaN/GaN heterostructures. Study of the shifts of spectral peak energies and their intensity variations with temperature, reveal that these
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9885dc9fe1af4cf38fa2359822c655ff
https://doi.org/10.1002/pssc.200461542
https://doi.org/10.1002/pssc.200461542
Autor:
Jeff Nause, D. C. Reynolds, Cole W. Litton, Bruce B. Claflin, J. E. Hoelscher, David C. Look, T. C. Collins, B. Nemeth
Publikováno v:
Journal of Applied Physics. 95:4802-4805
High-quality, melt-grown ZnO crystals are reported. The reflection and emission spectra of the melt-grown samples are compared with the same spectra from high-quality, vapor-grown ZnO crystals. We isolate the reflection and emission spectra predomina
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::082ebfc4f3b34419ee7b9c0a646701d0
https://doi.org/10.1063/1.1691186
https://doi.org/10.1063/1.1691186
Autor:
D. C. Reynolds, J. E. Hoelscher, T. C. Collins, T.J. Jenkins, A. Saxler, G. D. Via, R. Fitch, Cole W. Litton, J. K. Gillespie, A. Crespo
Publikováno v:
Journal of Applied Physics. 94:4263-4266
Emission and reflection spectra from AlGaN/GaN single heterostructures grown on SiC substrates were investigated. Two-dimensional electron gas (2DEG) transitions were observed in both emission and reflection. The transitions are sharp, associated wit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e6f0304ebaed502e2ceb8ecfc0da7b6
https://doi.org/10.1063/1.1603954
https://doi.org/10.1063/1.1603954
Publikováno v:
Journal of Applied Physics. 88:5760-5763
The energy positions of the optical transitions in both GaN and ZnO were investigated when the samples were excited simultaneously with a HeCd laser and an Ar+ ion laser. The increased number of free electrons excited by the Ar+ ion laser will effect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::22b763caf9baf3162670caef05c5c7e9
https://doi.org/10.1063/1.1320026
https://doi.org/10.1063/1.1320026
Autor:
G. Cantwell, R. E. Sherriff, David C. Look, B. Jogai, W. C. Harsch, D. C. Reynolds, J. E. Hoelscher, T. C. Collins
Publikováno v:
Journal of Applied Physics. 88:3454-3457
The crystal structure of ZnO is wurtzite and the stacking sequence of atomic layers along the “c” axis is not symmetric. As a result, a ZnO crystal surface that is normal to the c axis exposes one of two distinct polar faces, with (0001) being co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f9de01089c49a362d714935cbc738345
https://doi.org/10.1063/1.1288159
https://doi.org/10.1063/1.1288159
Publikováno v:
Journal of Applied Physics. 88:1460-1463
High quality GaN crystals can be grown on sapphire by hydride vapor phase epitaxy. The thermal expansion mismatch between sapphire and GaN produces strain in the GaN crystal as it is cooled from the growth temperature to room temperature. The strain
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c4b4efb4ef4a69b6cd95cc971d89c76
https://doi.org/10.1063/1.373839
https://doi.org/10.1063/1.373839
Publikováno v:
Journal of Applied Physics. 83:260-265
A comprehensive characterization, including room temperature Hall effect, near infrared absorption, temperature dependent dark current and photocurrent (using 1.13 eV light), normalized thermally stimulated current (NTSC), photoluminescence at 4.2 K
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::439e20dab9ee9ac34f02c69630df948a
https://doi.org/10.1063/1.366680
https://doi.org/10.1063/1.366680
Autor:
A. Botchkarev, Hadis Morkoç, Arnel Salvador, D. C. Reynolds, Ö. Aktas, Wook Kim, David C. Look
Publikováno v:
Journal of Applied Physics. 80:2960-2963
Molecular‐beam‐epitaxial GaN layers change from strongly conductive (ρ≂10−2 Ω cm at 300 K) to semi‐insulating (ρ≂106 Ω cm) as the N flux is increased. Layers grown at low fluxes show strong n‐type conduction, with transport in the c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cf709b9d5628da95ee28f37e7beb8706
https://doi.org/10.1063/1.363128
https://doi.org/10.1063/1.363128
Autor:
Cole W. Litton, D. C. Reynolds, T. Sota, Kouji Hazu, G. Cantwell, Shigefusa F. Chichibu, Satoru Adachi
Publikováno v:
Journal of Applied Physics. 96:1270-1272
The phase relaxation time of biexcitons T2bi and that of excitons T2ex in a bulk ZnO have been measured by the use of femtosecond four-wave mixing as functions of excitation wavelength, excitation power, and temperature. The biexciton-acoustic phonon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c476ace5a9d9270f9f53808319da37d
https://doi.org/10.1063/1.1760831
https://doi.org/10.1063/1.1760831
Publikováno v:
Physical Review B. 51:2572-2575
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fb1c478871eba5d8329ed141f64520b0
https://doi.org/10.1103/physrevb.51.2572
https://doi.org/10.1103/physrevb.51.2572