Zobrazeno 1 - 6
of 6
pro vyhledávání: '"D. C. Marvin"'
Autor:
B. Nesmith, Edward M. Gaddy, Paul M. Stella, L. Kazmerski, R. Bunker, Henry B. Curtis, D. C. Marvin, Nick Mardesich, R. Surampudi, D. Rapp, T. Hamilton, Sheila G. Bailey, J. Mondt, Michael F. Piszczor
Publikováno v:
Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002..
A technology review committee from NASA, the U.S. Department of Energy (DOE), and the Air Force Research Lab (AFRL) was formed to assess solar cell and array technologies required for future NASA science missions. After consulting with mission planni
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2fdb7c4b8bfee257ce4eee87d28b4907
https://doi.org/10.1109/pvsc.2002.1190694
https://doi.org/10.1109/pvsc.2002.1190694
Publikováno v:
29th Joint Propulsion Conference and Exhibit.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::547f41c205d7ba152ae93f942203b4df
https://doi.org/10.2514/6.1993-2221
https://doi.org/10.2514/6.1993-2221
Publikováno v:
IEEE Transactions on Nuclear Science. 33:1565-1570
The PISCES-II device analysis program has been modified to perform two-dimensional SEU induced latch-up simulations. The results of the simulations have been compared to cyclotron test data taken on a custom test chip. The comparison indicates that t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cdfa31af9d5dcdb3466d927141512a14
https://doi.org/10.1109/tns.1986.4334642
https://doi.org/10.1109/tns.1986.4334642
Publikováno v:
IEEE Journal of Quantum Electronics. 25:1064-1071
Analytical models for ambipolar diffusion and recombination successfully describe picosecond reflectivity signals for flat n-type GaAs, providing quantitative evaluation of surface recombination velocities. The simple models fail to describe the sign
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::01d319523821cfffd38610c5f36fe0c0
https://doi.org/10.1109/3.28001
https://doi.org/10.1109/3.28001
Publikováno v:
SPIE Proceedings.
Picosecond transient reflectivity was applied to measure surface recombination processes in intrinsic and n-doped GaAs. Photowashed surfaces were characterized by slow recombination and the results imply flat band conditions were achieved. Unwashed s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c46fc276a50548149999e33e8e190a5a
https://doi.org/10.1117/12.940920
https://doi.org/10.1117/12.940920