Zobrazeno 1 - 3
of 3
pro vyhledávání: '"D. C. Lapierre"'
Publikováno v:
IEEE Transactions on Nuclear Science. 30:4183-4186
An experimental evaluation of the transient radiation upset threshold of silcon MESFET circuits has been performed. Upset thresholds in the range of 2 to 6×108 rad/sec have been observed for shift registers and 1 to 5×107 rad/sec for 1K static memo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d78c6e315644e736582e10ff247baeeb
https://doi.org/10.1109/tns.1983.4333105
https://doi.org/10.1109/tns.1983.4333105
Autor:
R. Blanchard, B-Y. Tsaur, Chenson Chen, H. K. Choi, J. T. Schott, D. C. LaPierre, V. J. Sferrino, R. W. Mountain, W. M. Shedd
Publikováno v:
IEEE Transactions on Nuclear Science. 33:1372-1376
The effects of total-dose radiation have been investigated for the first complementary JFETs fabricated in zone-melting-recrystallized (ZMR) Si films on SiO2-coated Si substrates. With a -5 V bias applied to the Si substrate during irradiation and de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4764545e80c4be3cc182c70881bc4c69
https://doi.org/10.1109/tns.1986.4334607
https://doi.org/10.1109/tns.1986.4334607
Publikováno v:
IEEE Transactions on Nuclear Science. 31:1483-1486
A comprehensive study of the radiation hardness of the silicon MESFET technology using LOCOS isolation is reported. A MESFET 4K × 1 sRAM fabricated on bulk silicon using LOCOS isolation has essentially no change in performance through 28.5 Mrad(Si)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c0e153b88265ad3c208de00b3fd30deb
https://doi.org/10.1109/tns.1984.4333534
https://doi.org/10.1109/tns.1984.4333534