Zobrazeno 1 - 10
of 36
pro vyhledávání: '"D. Brazzelli"'
Autor:
Z.T. Kiss, D. Brazzelli, I. Mica, P. Monge Roffarello, A. Galbiati, Maria Luisa Polignano, P. Bacciaglia, M. Juhel, S. Grasso, E. Tomezzoli, Andrea Mario Torti, D. Cseh
Publikováno v:
Materials Today: Proceedings. 5:14778-14784
The objective of this paper is to study the phenomenology of the extended defects generated by phosphorus (P) implantations in silicon with a special attention to the interaction with a previous implantation of the same specie already recovered by a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dfe12ca074e3f8319e36c0d74eee0028
https://doi.org/10.1016/j.matpr.2018.03.068
https://doi.org/10.1016/j.matpr.2018.03.068
Publikováno v:
Microelectronic Engineering. 72:5-9
Aim of this work is to investigate the impact of soft breakdown on the main transistor parameters and the recovery of transistor leakage and performance after an annealing treatment. The correlation between soft (SBD) and hard breakdown (HBD) failure
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::705fbb7869eba034bea66692ab092609
https://doi.org/10.1016/j.mee.2003.12.008
https://doi.org/10.1016/j.mee.2003.12.008
Publikováno v:
Microelectronics Reliability. 43:1229-1235
In this paper we report a detailed characterization of anomalous gate oxide conduction on isolation edges. Previously, it was shown that gate oxide can feature severe thickness variation [Liu et al., Proceedings of VLSI Symposium, 1999, p. 75; Mat. R
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7cf48b3fb54d5eab5cb917094f79246f
https://doi.org/10.1016/s0026-2714(03)00176-8
https://doi.org/10.1016/s0026-2714(03)00176-8
Publikováno v:
Applied Surface Science. :437-440
Dynamic secondary ion mass spectrometry (SIMS) is commonly considered an important analytical technique to study the materials used for microelectronics. Direct analyses on electrically tested structures are hard to perform because of strict requirem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::319d430dbc410898cdcd5054ba990eb5
https://doi.org/10.1016/s0169-4332(02)00696-7
https://doi.org/10.1016/s0169-4332(02)00696-7
Autor:
D. Brazzelli, Gabriella Ghidini
Publikováno v:
Microelectronics Reliability. 42:1473-1480
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c1c2042762a118c42cf9ec5f260e359
https://doi.org/10.1016/s0026-2714(02)00173-7
https://doi.org/10.1016/s0026-2714(02)00173-7
Publikováno v:
Solid-State Electronics. 45:1271-1278
Thin wet oxides have been grown by in situ steam generation technique and nitrided by NO or N2O in a RTP Centura by applied material system after the oxidation. Nitrogen distributions are obtained by SIMS measurements and correlated with the charge t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a1c84e1c9e12f275eb6fab1a535ca84e
https://doi.org/10.1016/s0038-1101(01)00057-0
https://doi.org/10.1016/s0038-1101(01)00057-0
Publikováno v:
Microelectronics Reliability. 41:1003-1006
The deposition of WSi 2 on transistor gate in SiH 4 /WF 6 ambient produces strong variations into the active oxide layer, introducing a significant fluorine concentration into the dielectric. This phenomenon is here shown to have different effects on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4fa8f994babcee7c5c1353018acf925f
https://doi.org/10.1016/s0026-2714(01)00057-9
https://doi.org/10.1016/s0026-2714(01)00057-9
Autor:
D. Lopes, G.E Miner, G.C Xing, B. Crivelli, D. Brazzelli, R. Zonca, N D’Astici, Massimo Bersani, Satheesh Kuppurao, Gabriella Ghidini
Publikováno v:
Microelectronics Reliability. 40:641-644
The aim of this work is to investigate the possibility of producing high quality gate oxides by means of the RTP equipment. In particular, different nitrided oxides are compared. Nitrogen distributions are obtained by SIMS measurements and correlated
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2acc6e25b4a512db1905420be18698be
https://doi.org/10.1016/s0026-2714(99)00268-1
https://doi.org/10.1016/s0026-2714(99)00268-1
Autor:
M. L. POLIGNANO, M. ALESSANDRI, D. BRAZZELLI, B. CRIVELLI, G. GHIDINI, R. ZONCA, CARICATO, Anna Paola, M. BERSANI, M. SBETTI, L. VANZETTI, G. C. XING, G. E. MINER, N. ASTICI, S. KUPPURAO AND D. LOPES
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______4034::a80f9225ee982b7498817761633e9b72
https://hdl.handle.net/11587/117525
https://hdl.handle.net/11587/117525
Autor:
A. Ghetti, D. Brazzelli, M. Brambilla, Nadia Galbiati, A. Mauri, Roberta Bottini, A. Sebastiani, Gabriella Ghidini, C. Scozzari
Publikováno v:
2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual.
Aim of this work is to study the reliability of the dielectric between cell control gate and drain contact. Conduction characteristics and reliability under high field stress are investigated. The large spread in this dielectric thickness because of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::064cc25366382a0da50124e13bbd030b
https://doi.org/10.1109/relphy.2007.369960
https://doi.org/10.1109/relphy.2007.369960