(Invited) Second Harmonic Generation: A Powerful Non-Destructive Characterization Technique for Dielectric-on-Semiconductor Interfaces

Autor: Aude Bouchard, Brian Larzelere, Guy Vitrant, Irina Ionica, Gerard Ghibaudo, Sorin Cristoloveanu, Anne Kaminski, Lionel Bastard, D. Blanc-Pelissier, Martine Gri, Ming Lei, Xavier Mescot, D. Damianos

Publikováno v: ECS Transactions
ECS Transactions, Electrochemical Society, Inc., 2020, 97 (1), pp.119-130. ⟨10.1149/09701.0119ecst⟩

The quality of interfaces between dielectrics and semiconductors has a tremendous impact on the performances of semiconductor devices. High-k dielectrics are omnipresent in the gate stack of advanced MOSFETs. They are also used as passivation layers

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4c559a9982bbfb0bde00b2f71dba9c2d
https://hal.archives-ouvertes.fr/hal-02861584

Second Harmonic Generation characterization of SOI wafers: Impact of layer thickness and interface electric field

Autor: Guy Vitrant, I. Ionica, D. Blanc-Pelissier, Ming Lei, D. Damianos, J. Changala, A. Kaminski-Cachopo, Sorin Cristoloveanu

Publikováno v: Solid-State Electronics
Solid-State Electronics, Elsevier, 2018, 143, pp.90-96. ⟨10.1016/j.sse.2017.12.006⟩

International audience; In this work, we investigate Second Harmonic Generation (SHG) as a non-destructive characterization method for Silicon-On-Insulator (SOI) materials. For thick SOI stacks, the SHG signal is related to the thickness variations o

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6dd26320f1ef090b930440a02ad68c51
https://hal.archives-ouvertes.fr/hal-01893421

Transient second harmonic generation and correlation with Ψ-MOSFET in SOI wafers

Autor: G. Vitrant, A. Kaminski-Cachopo, M. Kryger, I. Ionica, Sorin Cristoloveanu, D. Blanc Pelissier, D. Damianos, J. Changala

Publikováno v: 2016 EUROSOI-ULIS Proceedings
2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)
2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Jan 2016, Vienna, Austria. pp.222-225, ⟨10.1109/ULIS.2016.7440093⟩

session poster; International audience; Silicon-on-Insulator (SOI) wafers are characterized using a non-destructive second harmonic generation (SHG) method. Correlation between the electrical parameters extracted from pseudo-MOSFET characteristics an

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f08c776926d012358b9794f97ccfde96
https://hal.archives-ouvertes.fr/hal-01974394

Field-effect passivation of Si by ALD-Al2O3: Second harmonic generation monitoring and simulation

Autor: D. Blanc-Pelissier, M. Gri, G. Vitrant, A. Bouchard, Gerard Ghibaudo, I. Ionica, Sorin Cristoloveanu, D Damianos, X. Mescot, Ming Lei, A. Kaminski-Cachopo, J. Changala

Publikováno v: Journal of Applied Physics
Journal of Applied Physics, American Institute of Physics, 2018, 124 (12), pp.125309. ⟨10.1063/1.5041062⟩

International audience; This paper investigates the ability of second harmonic generation (SHG) to probe the passivation quality of atomic layer deposited (ALD) Al2O3 on Si by estimating the induced interface electric field due to fixed charges in th

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::273a47f07324586db329b03c5cbe6970
https://doi.org/10.1063/1.5041062

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