Zobrazeno 1 - 10
of 25
pro vyhledávání: '"D. Birmpiliotis"'
Publikováno v:
Microelectronics Reliability. :840-845
The potential application of Yttrium Oxide (Y2O3) in capacitive Micro-Electro-Mechanical Switches (MEMS) dielectric films is investigated. The electrical properties and the impact of electrical stress on capacitive switches have been investigated wit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e31da6b99949877b005e68fd54ab7a0e
https://doi.org/10.1016/j.microrel.2018.07.087
https://doi.org/10.1016/j.microrel.2018.07.087
Publikováno v:
Microelectronics Reliability. 126:114294
The present paper provides a novel, inexpensive and non-destructive method to assess the surface charge density variance in capacitive RF-MEMS switches. The charge variance evolution can be monitored during charging and discharging processes by measu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a10cafcd60d2ca54f9cfd55cd618f47e
https://doi.org/10.1016/j.microrel.2021.114294
https://doi.org/10.1016/j.microrel.2021.114294
Autor:
George Konstantinidis, G. Stavrinidis, Matroni Koutsoureli, D. Birmpiliotis, George J. Papaioannou
Publikováno v:
Microelectronics Reliability. :614-618
The present paper aims to provide a better insight on the electrical properties of silicon nitride (SiNx) dielectric films with embedded carbon nanotubes (CNTs) that can be used in RF MEMS capacitive switches. The effect of the embedded CNTs on the l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c8137f826c71d2291e0e955629062f33
https://doi.org/10.1016/j.microrel.2017.07.041
https://doi.org/10.1016/j.microrel.2017.07.041
Akademický článek
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Publikováno v:
Microelectronics Reliability. 64:688-692
The present paper aims to provide a better approach on the analysis of pull-up capacitance-voltage characteristic of MEMS capacitive switches by introducing an analytical model that takes into account the case of a real device, where the charge is no
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c7e212bd290cea5a314754059ff23144
https://doi.org/10.1016/j.microrel.2016.07.027
https://doi.org/10.1016/j.microrel.2016.07.027
Publikováno v:
Microelectronic Engineering. 159:209-214
The paper presents a new method to determine and monitor the surface charge density of dielectric film in capacitive MEMS switches which experience a significant interference from substrate parasitic MOS capacitors coupling. The method is based on th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::40d0f3fc68ea7e00a1cc30af2e77f453
https://doi.org/10.1016/j.mee.2016.04.008
https://doi.org/10.1016/j.mee.2016.04.008
Autor:
George Konstantinidis, George J. Papaioannou, D. Birmpiliotis, G. Stavrinidis, Matroni Koutsoureli
Publikováno v:
Microelectronics Reliability. 114:113878
A more realistic approach of the discharging process in MEMS capacitive switches is presented with the introduction of the effective temperature in order to determine the behavior of the microscopic parameters of hopping conduction, which dominates t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a373d449eaa8d0d9b5088e434e61faa9
https://doi.org/10.1016/j.microrel.2020.113878
https://doi.org/10.1016/j.microrel.2020.113878
Publikováno v:
Microelectronics Reliability. 114:113759
This work presents an in depth investigation regarding the effect of PECVD silicon nitride (SiNx) stoichiometry on its charging mechanisms. The investigation took place in SiNx dielectric films with different Si-content (x = 0.47–1.04) with the aid
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::51fe2b39e76243427f2fd794dc86f54a
https://doi.org/10.1016/j.microrel.2020.113759
https://doi.org/10.1016/j.microrel.2020.113759
Autor:
D. Birmpiliotis, Matroni Koutsoureli, G. Konstantinidis, George J. Papaioannou, G. Stavrinidis
Publikováno v:
Microelectronic Engineering. 223:111230
In the present work, we investigate thermally activated processes in nanostructured SiNx films with embedded CNTs, which can be used in RF MEMS capacitive switches. Nanostructured films have been fabricated with a simple process, in order to incorpor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2f52401173de48556f1d0a46509b6bb4
https://doi.org/10.1016/j.mee.2020.111230
https://doi.org/10.1016/j.mee.2020.111230
Publikováno v:
International Symposium for Testing and Failure Analysis.
Metal-insulator-metal (MIM) capacitors with single TiO2 and a TiO2/Y2O3 stack are used as insulator films in MIM and MEMS, respectively, are explored. It is found that, under electron injection from bottom electrode, the TiO2 MIM capacitors demonstra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e686165fc715d09a6e0b846a2a39a6c
https://doi.org/10.31399/asm.cp.istfa2018p0324
https://doi.org/10.31399/asm.cp.istfa2018p0324