Zobrazeno 1 - 10
of 294
pro vyhledávání: '"D. Belot"'
Autor:
B. Martineau, D. Belot
Publikováno v:
2020 IEEE International Electron Devices Meeting (IEDM).
This paper presents an overview of Si and SOI CMOS technologies for millimeter-wave applications. Implementations of CMOS-only, partially depleted and fully depleted SOI technologies are compared for the different blocks constituting an integrated RF
Kniha
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Publikováno v:
Proceedings of the IEEE. 97:9-17
ldquoMore than Moorerdquo is becoming the password for these coming years. New steps to overcome technology limitations to diffuse, on the same die, different chips to have a complete system have been developed. This approach is called system in pack
Publikováno v:
Modeling and Measurement Methods for Acoustic Waves and for Acoustic Microdevices
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::99eb696f26209a0440e899752f501219
http://www.intechopen.com/articles/show/title/techniques-for-tuning-baw-smr-resonators-for-the-4th-generation-of-mobile-communications
http://www.intechopen.com/articles/show/title/techniques-for-tuning-baw-smr-resonators-for-the-4th-generation-of-mobile-communications
Publikováno v:
Study and Analysis of a New Implementation of a Mixed-Signal Cartesian Feedback for a Low Power Zero-IF WCDMA Transmitter
NEWCAS
NEWCAS, Jun 2013, PARIS, France. pp.1-4
NEWCAS
NEWCAS, Jun 2013, PARIS, France. pp.1-4
International audience; tThis paper, we proposes a new architecture to reduce the silicon area of the Cartesian feedback (CFB) used to linearize a power amplifier in WCDMA contextcommunication standard. The first stage of the previous version consist
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bad7367af9d5fab10cfaff0a0716a297
https://hal.archives-ouvertes.fr/hal-00841311
https://hal.archives-ouvertes.fr/hal-00841311
Publikováno v:
A 2.535 GHz Fully Integrated Doherty Power Amplifier in CMOS 65nm with Constant PAE in Backoff
LASCAS 2013
LASCAS 2013, Feb 2013, CUZCO, Peru. pp.1-4
LASCAS
LASCAS 2013
LASCAS 2013, Feb 2013, CUZCO, Peru. pp.1-4
LASCAS
International audience; A fully integrated Doherty power amplifier at 2.535 GHz is presented in 65 nm CMOS technology with constant PAE over a 8.75dB backoff. The amplifier has 23.4 dBm output power and both PAE peaks have the same level in 25%. Both
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f810b7b6abd1cd5d270f47aa6b12062b
https://hal.archives-ouvertes.fr/hal-00842193
https://hal.archives-ouvertes.fr/hal-00842193
Publikováno v:
ISSCC
Radio-frequency performance is limited by fundamental constraints in dynamic range, as CMOS scaling continues to push supply voltages lower. The receiver needs to reject large in-band and out-of-band blockers while detecting small desired signals. Th
Publikováno v:
LASCAS
The optimization of passive devices is performed to contribute to the design of a linear 60 GHz Power Amplifier (PA). The difficulty in this design consists in the use of thin digital 7 metal layers (1P7M) Back End of Line (BEOL) and Low Power (LP) t
Autor:
J. P. Guzman, Denis Pache, Michel Ney, D. Belot, N. Demirel, Romain Pilard, C. Person, Yenny Pinto, Christophe Calvez, Eric Kerherve, Daniel Gloria
Publikováno v:
Antennas on Silicon: Hybrid Integration Versus SoC Solutions?
European Antennas and Propagation (EUCAP)
European Antennas and Propagation (EUCAP), Mar 2012, Prague, Czech Republic. pp.75-80
European Antennas and Propagation (EUCAP)
European Antennas and Propagation (EUCAP), Mar 2012, Prague, Czech Republic. pp.75-80
International audience; Silicon technologies are now competitive with III-V components for applications in the millimeter wave frequencies range, as already demonstrated through fully integrated on-chip systems [1]-[6]. We discuss in this paper of th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d9603f0914b13fd6b940ffd2d97de7c2
https://hal.archives-ouvertes.fr/hal-00719207
https://hal.archives-ouvertes.fr/hal-00719207
Publikováno v:
International Journal of RF and Microwave Computer-Aided Engineering
International Journal of RF and Microwave Computer-Aided Engineering, Wiley, 2011, 21 issue 5, pp.496-504
International Journal of RF and Microwave Computer-Aided Engineering, Wiley, 2011, 21 issue 5, pp.496-504
This paper presents the impedance behavior of the bulk acoustic wave solidly mounted resonators (BAW-SMR). Also, it shows the effects of the addition of passive elements (L, C) to this type of resonators. In addition, this article presents a tunable
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2d8daf934ebf487fab1cb4fa77d294ac
https://hal.archives-ouvertes.fr/hal-01044466
https://hal.archives-ouvertes.fr/hal-01044466