Zobrazeno 1 - 10
of 122
pro vyhledávání: '"D. Batuk"'
Autor:
C. Porret, J.-L. Everaert, M. Schaekers, L.-A. Ragnarsson, A. Hikavyy, E. Rosseel, G. Rengo, R. Loo, R. Khazaka, M. Givens, X. Piao, S. Mertens, N. Heylen, H. Mertens, C. Toledo De Carvalho Cavalcante, G. Sterckx, S. Brus, A. Nalin Mehta, M. Korytov, D. Batuk, P. Favia, R. Langer, G. Pourtois, J. Swerts, E. Dentoni Litta, N. Horiguchi
Publikováno v:
2022 International Electron Devices Meeting (IEDM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::78086ce8edcc5c3d4eede696a5240455
https://doi.org/10.1109/iedm45625.2022.10019501
https://doi.org/10.1109/iedm45625.2022.10019501
Autor:
H. Mertens, R. Ritzenthaler, Y. Oniki, P. Puttarame Gowda, G. Mannaert, F. Sebaai, A. Hikavyy, E. Rosseel, E. Dupuy, A. Peter, K. Vandersmissen, D. Radisic, B. Briggs, D. Batuk, J. Geypen, G. Martinez-Alanis, F. Seidel, O. Richard, B.T. Chan, J. Mitard, E. Dentoni Litta, N. Horiguchi
Publikováno v:
2022 International Electron Devices Meeting (IEDM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7559774f6d1287531641ef258b9aefd7
https://doi.org/10.1109/iedm45625.2022.10019497
https://doi.org/10.1109/iedm45625.2022.10019497
Autor:
V. Vega-Gonzalez, D. Radisic, S. Choudhury, D. Tierno, A. Thiam, D. Batuk, G.T. Martinez, F. Seidel, S. Decoster, S. Kundu, D. Tsvetanova, A. Peter, H. De Coster, A. Sepulveda-Marquez, E. Altamirano-Sanchez, Bt Chan, Y. Drissi, Y. Sherazi, J. Uk-Lee, I. Ciofi, G. Murdoch, N. Nagesh, G. Hellings, J. Ryckaert, S. Biesemans, E. Dentoni Litta, N. Horiguchi, S. Park, Zs. Tokei
Publikováno v:
2022 International Electron Devices Meeting (IEDM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f9b19ff76457aea9272a0db1975d3005
https://doi.org/10.1109/iedm45625.2022.10019483
https://doi.org/10.1109/iedm45625.2022.10019483
Device engineering guidelines for performance boost in IGZO front gated TFTs based on defect control
Autor:
S. Subhechha, N. Rassoul, A. Belmonte, H. Hody, H. Dekkers, M. J. van Setten, A. Chasin, S.H. Sharifi, K. Banerjee, H. Puliyalil, S. Kundu, M. Pak, D. Tsvetanova, N. Bazzazian, K. Vandersmissen, D. Batuk, J. Geypen, J. Heijlen, R. Delhougne, G. S. Kar
Publikováno v:
2022 International Conference on IC Design and Technology (ICICDT).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::51f5d1a5fa12853fb235792ac034f93d
https://doi.org/10.1109/icicdt56182.2022.9933087
https://doi.org/10.1109/icicdt56182.2022.9933087
Autor:
A. Veloso, A. Jourdain, D. Radisic, R. Chen, G. Arutchelvan, B. O'Sullivan, H. Arimura, M. Stucchi, A. De Keersgieter, M. Hosseini, T. Hopf, K. D'have, S. Wang, E. Dupuy, G. Mannaert, K. Vandersmissen, S. Iacovo, P. Marien, S. Choudhury, F. Schleicher, F. Sebaai, Y. Oniki, X. Zhou, A. Gupta, T. Schram, B. Briggs, C. Lorant, E. Rosseel, A. Hikavyy, R. Loo, J. Geypen, D. Batuk, G. T. Martinez, J. P. Soulie, K. Devriendt, B. T. Chan, S. Demuynck, G. Hiblot, G. Van der Plas, J. Ryckaert, G. Beyer, E. Dentoni Litta, E. Beyne, N. Horiguchi
Publikováno v:
2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4fe65e0b6bd182b564dfefec2e7bf7a2
https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830177
https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830177
Autor:
S. Subhechha, N. Rassoul, A. Belmonte, H. Hody, H. Dekkers, M. J. van Setten, A. Chasin, S.H. Sharifi, S. Sutar, L. Magnarin, U. Celano, H. Puliyalil, S. Kundu, M. Pak, L. Teugels, D. Tsvetanova, N. Bazzazian, K. Vandersmissen, C. Biasotto, D. Batuk, J. Geypen, J. Heijlen, R. Delhougne, G. S. Kar
Publikováno v:
2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a8dfafc52d9b69a3f5065f4a459005b8
https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830448
https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830448
Autor:
A. Belmonte, H. Oh, S. Subhechha, N. Rassoul, H. Hody, H. Dekkers, R. Delhougne, L. Ricotti, K. Banerjee, A. Chasin, M. J. van Setten, H. Puliyalil, M. Pak, L. Teugels, D. Tsvetanova, K. Vandersmissen, S. Kundu, J. Heijlen, D. Batuk, J. Geypen, L. Goux, G. S. Kar
Publikováno v:
2021 IEEE International Electron Devices Meeting (IEDM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e4c53e74474b5d2daaa435c1ec9f604
https://doi.org/10.1109/iedm19574.2021.9720596
https://doi.org/10.1109/iedm19574.2021.9720596
Autor:
Philippe Leray, N. Jourdan, O. Varela Pedreira, E. Dentoni-Litta, Thomas Witters, Werner Gillijns, Nancy Heylen, L. Ramakers, E. Grieten, Zaid El-Mekki, Gayle Murdoch, V. Vega-Gonzalez, Anne-Laure Charley, Ivan Ciofi, Zsolt Tokei, H. Vats, S. V. Gompel, M. H. van der Veen, L. Halipre, J. Swerts, A. Haider, Bilal Chehab, S. Park, N. Bazzazian, Quoc Toan Le, B. De Wachter, T. Peissker, Harinarayanan Puliyalil, Naoto Horiguchi, Miroslav Cupak, J. Versluijs, G. T. Martinez, Y. Kimura, R. Kim, J. Geypen, J. Uk-Lee, N. Nagesh, D. Montero, L. Rynders, M. Ercken, D. Batuk, K. Croes, Patrick Verdonck, Manoj Jaysankar, Y. Drissi, T. Webers
Publikováno v:
2021 IEEE International Interconnect Technology Conference (IITC).
The integration of high aspect-ratio (AR) vias or supervias (SV) with a min CD bottom = 10.5 nm and a max AR = 5.8 is demonstrated, allowing a comparison between ruthenium (Ru) and cobalt (Co) chemical vapor deposition (CVD) metallizations. Ru gave a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::775097fabe7d875876eeac9844668bb1
https://doi.org/10.1109/iitc51362.2021.9537535
https://doi.org/10.1109/iitc51362.2021.9537535
Autor:
P. Schuddinck, J. Hung, Sylvain Baudot, Yong Kong Siew, D. Batuk, P. Morin, X. Zhou, R. Koret, E. Capogreco, E. Dentoni Litta, S. Subramanian, G. Mannaert, Farid Sebaai, Naoto Horiguchi, Alessio Spessot, Maryamsadat Hosseini, Thomas Chiarella, T. Hopf, D. Radisic, Antony Premkumar Peter, Andriy Hikavyy, G. T. Martinez, Boon Teik Chan, B. Briggs, S. Sarkar, Anabela Veloso, S. Wang, Steven Demuynck, Katia Devriendt, Erik Rosseel, Julien Ryckaert, Juergen Boemmels
Publikováno v:
2020 IEEE Symposium on VLSI Technology.
We report the first monolithic integration of 3D Complementary Field Effect Transistor (CFET) on 300mm wafers using imec's N14 platform. A monolithic CFET process is cost effective compared to a sequential CFET process. The small N/P separation in a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ea63300978f76e7c728e74e620105f61
https://doi.org/10.1109/vlsitechnology18217.2020.9265073
https://doi.org/10.1109/vlsitechnology18217.2020.9265073
