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Current transport mechanisms in n-type amorphous silicon-carbon on p-type crystalline silicon (a-:H/c-Si) heterojunction diodes

Autor: Xavier Correig, Albert Orpella, Ramon Alcubilla, Lluis F. Marsal, D. Bardés, Josep Pallarès

Publikováno v: Semiconductor Science and Technology. 13:1148-1153

N-type amorphous silicon-carbon on p-type crystalline silicon heterojunction diodes have been fabricated and electrically characterized. The a-:H film was deposited by plasma-enhanced chemical vapour deposition. The electrical properties were investi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5185ee8000d5ae425bcc2974c0d90e9f
https://doi.org/10.1088/0268-1242/13/10/016

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Annealed Si1-xCx Emitter Silicon Heterojunction Bipolar Transistors

Autor: X. Correiga, J. Calderer, Lluis F. Marsal, Josep Pallarès, Ramon Alcubilla, Albert Orpella, D. Bardés

Publikováno v: Materials Science Forum. :1455-1458

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e12a5f322e3f20760989d14dc51e6a06
https://doi.org/10.4028/www.scientific.net/msf.264-268.1455

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Fabrication and characterization of in-situ doped a-Si0.8C0.2 emitter bipolar transistors

Autor: Lluis F. Marsal, Albert Orpella, Ramon Alcubilla, Joaquim Puigdollers, Josep Pallarès, D. Bardés

Publikováno v: Recercat. Dipósit de la Recerca de Catalunya
instname
UPCommons. Portal del coneixement obert de la UPC
Universitat Politècnica de Catalunya (UPC)

Silicon–carbon emitters were deposited by plasma enhanced chemical vapour deposition (PECVD) on a conventional silicon transistor base. The resulting transistors were annealed after the emitter had been deposited which led to the dopant diffusing f

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ce25738b1f78a73a7dd9ef1cdc483253
https://hdl.handle.net/2117/112407

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Analysis of conduction mechanisms in annealed n-Si1-xCx:H/p-crystalline Si heterojunction diodes for different doping concentrations

Autor: Albert Orpella, D. Bardés, Josep Pallarès, Lluis F. Marsal, Ramon Alcubilla, Xavier Correig

Publikováno v: Scopus-Elsevier
Recercat. Dipósit de la Recerca de Catalunya
instname
UPCommons. Portal del coneixement obert de la UPC
Universitat Politècnica de Catalunya (UPC)

We fabricated and characterized annealed n-type amorphous Si1-xCx on p-type crystalline silicon heterojunction diodes with three different base doping concentrations: NA~1016,¿1018, and 1020¿cm-3. The conduction mechanisms were determined by analyz

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::523b345c57fe46aa47781f081ef219d4
https://hdl.handle.net/2117/130750

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Analytical modelling of bjt neurtral base region under variable injection conditions

Autor: D. Bardés, Ramon Alcubilla

Publikováno v: Recercat. Dipósit de la Recerca de Catalunya
instname
UPCommons. Portal del coneixement obert de la UPC
Universitat Politècnica de Catalunya (UPC)
Scopus-Elsevier

We present a set of closed form analytical solutions of the transport equation in the base of bipolar transistors. The presented 1D solutions hold for variable injection conditions, arbitrary doping profiles and arbitrary intrinsic carrier concentrat

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::25afe2384433439611ab92b776e44ecf
https://hdl.handle.net/2117/130753

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Electrical properties of PECVD amorphous silicon-carbon alloys from amorphous-crystalline heterojunctions

Autor: Ramon Alcubilla, D. Bardés, Josep Pallarès, Xavier Correig, Lluis F. Marsal, J. Calderer, Manuel Dominguez

Publikováno v: UPCommons. Portal del coneixement obert de la UPC
Universitat Politècnica de Catalunya (UPC)
Recercat. Dipósit de la Recerca de Catalunya
instname

Heterojunction diodes fabricated by plasma enhanced chemical vapour deposition of n -type amorphous silicon carbide on p-type crystalline silicon are analysed by measuring their current-voltage characteristics. Two carrier transport mechanisms are be

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::802a0a1240d51b915c3938d5b50e6624
http://hdl.handle.net/2117/130752

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Analysis of Charge Storage in Polysilicon Contacts

Autor: D. Bardés, R. Alcubilla

Publikováno v: Simulation of Semiconductor Devices and Processes ISBN: 9783709173725

We present the use of a commercial 2D device simulator, MEDICI [1], to analyze a polysilicon emitter contact. By using a 2-box model we adjust simultaneously the effective recombination velocity and the stored charge in the polysilicon layer.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::959b7aa907b45d8f5262b6981d4dfe23
https://doi.org/10.1007/978-3-7091-6657-4_72

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