Zobrazeno 1 - 10
of 29
pro vyhledávání: '"D. B. Poker"'
Autor:
J. M. Williams, R. A. Zuhr, Eric Carlson, E.J. Yadlowsky, M. D. Keitz, Robert C. Hazelton, D. B. Poker, C. Christopher Klepper
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 20:725-732
In principle, boron (B) as a material has many excellent surface properties, including corrosion resistance, very high hardness, refractory properties, and a strong tendency to bond with most substrates. The potential technological benefits of the ma
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9830a804f5502503f31d21f6c18c43ae
https://doi.org/10.1116/1.1464844
https://doi.org/10.1116/1.1464844
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 13:662-665
Si‐capped SiGeC films grown on Si(100) substrates by chemical vapor deposition were implanted with several doses of 200 keV Sb ions. One sample was implanted with 1×1016 ions/cm2 of 200 keV Si ions at 77 K in order to completely amorphize the laye
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::92f58de0081c8c0cac344cb8c7909b40
https://doi.org/10.1116/1.579803
https://doi.org/10.1116/1.579803
Publikováno v:
Annual Review of Materials Science. 24:125-158
The development of ion implantation as a technique for the surface modi fication of materials has traditionally focused on metals and semi conductors. This is primarily because implantation techniques have found most of their technological applic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c49328e5308af067228c22af4e9e9571
https://doi.org/10.1146/annurev.ms.24.080194.001013
https://doi.org/10.1146/annurev.ms.24.080194.001013
Autor:
C. W. White, S.A. Pappert, W. Xia, D. B. Poker, S. A. Schwarz, B. Zhu, S. S. Lau, A. R. Clawson, Paul K. L. Yu
Publikováno v:
Journal of Applied Physics. 71:2602-2610
Compositional disordering of III‐V compound superlattice structures has received considerable attention recently due to its potential application for photonic devices. The conventional method to induce compositional disorder in a layered structure
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6861f3edcd82beb8e075ef3dbefea4c6
https://doi.org/10.1063/1.351079
https://doi.org/10.1063/1.351079
Autor:
W. Xia, S.A. Pappert, C.C. Han, D. B. Poker, Paul K. L. Yu, B. Zhu, S.N. Hsu, C. Cozzolino, C.W. White, S.A. Schwarz, S. S. Lau
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. :491-498
Compositional disordering of III–V compound superlattice structures has received considerable attention recently due to its potential application for photonic devices. The conventional method to induce compositional disorder is to implant a moderat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::efe239bf09289c473502d30d347c8e61
https://doi.org/10.1016/0168-583x(91)95266-g
https://doi.org/10.1016/0168-583x(91)95266-g
Publikováno v:
Applied Physics Letters. 66:1132-1134
Coimplantations of carbon implanted GaAs at doses of mtsp;5×1013 and mtsp;5×1014 cm−2 were performed at room temperature using argon, gallium, arsenic, and krypton ions with varying beam intensity. The electrical activation of carbon implanted ga
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5565d6499167055552771df53b8c149e
https://doi.org/10.1063/1.113836
https://doi.org/10.1063/1.113836
Publikováno v:
MRS Proceedings. 639
Low temperature photoluminescence is used to study the levels introduced by low-dose implantation of Mg, C, and Be into GaN, together with Ne, Al, P, or Ar co-implantation species. None of the co-implants successfully creates shallow C or Be acceptor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ff067244934562efa0c404ff3fb87e35
https://doi.org/10.1557/proc-639-g11.39
https://doi.org/10.1557/proc-639-g11.39
This CRADA was intended to investigate and optimize the process used by ASTEX-PlasmaQuest for deposition of diamond-like carbon films. Approval for funding was delayed, and an unexpected move of the PlasmaQuest headquarters and research facilities pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3230f7d5ba4f70b4bc58f7c0ea429eca
https://doi.org/10.2172/770428
https://doi.org/10.2172/770428
Autor:
D. H. Lowndes, A. P. Alivisatos, M. Alper, R. S. Averback, J. Jacob Barhen, J. A. Eastman, D. Imre, I. McNulty, T. A. Michalske, K-M Ho, A. J. Nozik, T. P. Russell, R. A. Valentin, D. O. Welch, J. Barhen, S. R. Agnew, P. Bellon, J. Blair, L. A. Boatner, Y. Braiman, J. D. Budai, G. W. Crabtree, L. C. Feldman, C. P. Flynn, D. B. Geohegan, E. P. George, E. Greenbaum, C. Grigoropoulos, T. E. Haynes, J. Heberlein, J. Hichman, O. W. Holland, S. Honda, J. A. Horton, M. Z.-C. Hu, D. E. Jesson, D. C. Joy, A. Krauss, W.-K. Kwok, B. C. Larson, D. J. Larson, K. Likharev, C. T. Liu, A. Majumdar, P. J. Maziasz, A. Meldrum, J. C. Miller, F. A. Modine, S. J. Pennycook, G. M. Pharr, S. Phillpot, D. L. Price, V. Protopopescu, D. B. Poker, D. Pui, J. M. Ramsey, N. Rao, L. Reichl, J. Roberto, M-L Saboungi, M. Simpson, S. Strieffer, T. Thundat, M. Wambsganss, J. Wendleken, C. W. White, G. Wilemski, S. P. Withrow, D. Wolf, J. H. Zhu, R. A. Zuhr, A. Zunger, S. Lowe
This report describes important future research directions in nanoscale science, engineering and technology. It was prepared in connection with an anticipated national research initiative on nanotechnology for the twenty-first century. The research d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::daf9e67a0a727ea6cbd8994259429221
https://doi.org/10.2172/899254
https://doi.org/10.2172/899254