Zobrazeno 1 - 10
of 22
pro vyhledávání: '"D. B. Kushev"'
Autor:
N N Zheleva, D B Kushev
Publikováno v:
Journal of Physics D: Applied Physics. 28:1239-1243
A method for obtaining analytical expressions for the energy (intensity) optical coefficients and their envelopes of a film with a linear variation in thickness is proposed. The method is demonstrated for the transmittivity, front and back reflectivi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::03e0b084f1a188218a992e34e121efdb
https://doi.org/10.1088/0022-3727/28/6/029
https://doi.org/10.1088/0022-3727/28/6/029
Autor:
D B Kushev, N N Zheleva
Publikováno v:
Semiconductor Science and Technology. 8:S322-S325
An approach for characterization of some narrow-gap semiconductors from the minimum of the bulk reflectivity spectra in the plasma reflectivity region is presented. Determination of the concentration, effective mass, relaxation time and optical mobil
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::42ab68577de75a4ac7d24b719ffc276a
https://doi.org/10.1088/0268-1242/8/1s/071
https://doi.org/10.1088/0268-1242/8/1s/071
Publikováno v:
Crystal Research and Technology. 28:463-468
Lead diiodide has been proposed as a solvent for liquid-phase growth of PbTe layers on BaF2 substrates. The contact with pre-eutectic (PbI2-PbTe) solutions has resulted in deposition of PbI2 islands of spherical cupola shape. The relatively small con
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d612a6c4ab9bd03b670824fe278a1d73
https://doi.org/10.1002/crat.2170280408
https://doi.org/10.1002/crat.2170280408
Publikováno v:
AIP Conference Proceedings.
Transmissivity and refelectivities of SnTe thin films are measured for determination of the optical band gap. Step like form of the absorption edge spectral dependence appear for sample thicknesses less than 0.3 μm. There is also shifting of the abs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::14291d53782bff7f81f8ca2dea5641d8
https://doi.org/10.1063/1.2733431
https://doi.org/10.1063/1.2733431
Autor:
N. N. Zheleva, D. B. Kushev
Publikováno v:
Applied Optics. 35:113
The normal-incidence transmissivity and reflectivities (front and back) for the incoherent case are calculated for an absorbing-plane sample with linear variation of the thickness. Closed-form expressions for the direct determination of the energy (i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::de2200f99d6f272d27473e3b1043e7a5
https://doi.org/10.1364/ao.35.000113
https://doi.org/10.1364/ao.35.000113
Autor:
D. B. Kushev
Publikováno v:
Journal of Applied Spectroscopy. 22:567-573
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ac2e6c8c29be7be04ba3f12a578c458
https://doi.org/10.1007/bf00614718
https://doi.org/10.1007/bf00614718
Publikováno v:
physica status solidi (b). 100:731-737
Using reflection methods in the plasma frequency range, nonparabolic valence bands of solid solutions Pb1—xSnxTe with composition near the inversion point of the bands (x = 0.55, 0.6, 0.65) are investigated. The Hall concentration of the samples ar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4c676496aeb99f729c7b2a7beec61686
https://doi.org/10.1002/pssb.2221000242
https://doi.org/10.1002/pssb.2221000242
Publikováno v:
Physica Status Solidi (a). 52:341-345
The properties of iron-doped GaP crystals are investigated using double injection methods of p–i–n diodes, absorption, and luminescence. Current–voltage characteristics are observed (probably for the first time in GaP) with N- and S-like parts.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::074461293a6ba417f76118d02ceccf45
https://doi.org/10.1002/pssa.2210520138
https://doi.org/10.1002/pssa.2210520138
Autor:
A. S. Popov, D. B. Kushev
Publikováno v:
physica status solidi (a). 97:K63-K67
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6c43da97a6bb21a399d650993dba16cf
https://doi.org/10.1002/pssa.2210970147
https://doi.org/10.1002/pssa.2210970147
Publikováno v:
Materials Research Bulletin. 23:779-783
Direct low temperature synthesis was applied for preparing III-V compounds. Its major advantages are: the purity of the product is determined by that of the initial elements; the vapor pressure of the group V element is reduced.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d565d1094f54a1bdf6d86da79703eb91
https://doi.org/10.1016/0025-5408(88)90069-4
https://doi.org/10.1016/0025-5408(88)90069-4