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pro vyhledávání: '"D. B. Kaprov"'
Autor:
S. V. Chernykh, M. N. Kondakov, D. B. Kaprov, Kirill D. Shcherbachev, N. B. Gladysheva, A. V. Chernykh, N. Yu. Tabachkova, A. A. Dorofeev, Sergey Didenko
Publikováno v:
Russian Microelectronics. 45:402-409
Mo/Al/Mo/Au metallization scheme as an ohmic contact to undoped AlGaN/GaN heterostructures was investigated. The optimal thicknesses of the metal layers were determined: Mo (10 nm)/Al (60 nm)/ Mo (50 nm)/Au (50 nm). The specific contact resistance of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::158890be345b7b07f53b9764f924087b
https://doi.org/10.1134/s1063739716060032
https://doi.org/10.1134/s1063739716060032
