Zobrazeno 1 - 7
of 7
pro vyhledávání: '"D. B. Dimitrov"'
Publikováno v:
Diamond and Related Materials. 8:1148-1151
The electrical, structural and optical properties of thin SiC films were investigated. A new approach based on high temperature annealing of layered carbon–silicon structures was used for the formation of the films. The SiC films were prepared by d
Publikováno v:
Journal of Materials Research. 12:2511-2514
In this work the properties of polycrystalline silicon layers obtained by rapid thermal annealing have been discussed. Amorphous silicon layers with thickness of 3000 Å have been deposited on silicon wafers in rf sputtering system. The layers were a
Publikováno v:
1997 21st International Conference on Microelectronics. Proceedings.
The photoluminescence (PL) spectra of porous silicon layers annealed for 15 to 180 sec in vacuum at temperatures above 800/spl deg/C are presented. The experimental spectra consist of two main PL bands at 1.8 eV and 2.2 eV. The 2.2 eV band is indepen
Autor:
D. B. Dimitrov
Publikováno v:
Physical review. B, Condensed matter. 51(3)
Publikováno v:
Journal de Physique IV Proceedings
Journal de Physique IV Proceedings, EDP Sciences, 1993, 03 (C3), pp.C3-493-C3-497. ⟨10.1051/jp4:1993368⟩
Journal de Physique IV Proceedings, EDP Sciences, 1993, 03 (C3), pp.C3-493-C3-497. ⟨10.1051/jp4:1993368⟩
Polly-Silicon Films obtained by μPCVD were studied with respect to their structural and electrical properties influenced by rapid thermal annealing (RTA) in vacuum. In addition an annealing in H 2 atmosphere at atmospheric pressure was curried out.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::abd606f145598201701d170c45549a3d
https://hal.archives-ouvertes.fr/jpa-00251425
https://hal.archives-ouvertes.fr/jpa-00251425
Autor:
D. B. Dimitrov
Publikováno v:
Ukrainian Mathematical Journal. 25:156-160
Autor:
D. B. Dimitrov
Publikováno v:
Functional Analysis and Its Applications. 5:158-160