Zobrazeno 1 - 10
of 115
pro vyhledávání: '"D. Arsova"'
Publikováno v:
Surface and Coatings Technology. 307:542-546
Amorphous selenium and crystalline tellurium thin films were deposited by frequency assisted thermal deposition in vacuum – a new approach for preparation of thin films based on condensation of the evaporated material on an excited substrate, at wh
Publikováno v:
Semiconductors. 50:941-946
The I–V characteristics obtained for layers of chalcogenide vitreous semiconductor of the Ge–Sb–Te system in the current-generator mode are investigated. The instability region, i.e., the region of conductivity oscillations, observed in the cas
Far-infrared spectra of a germanium-antimony-tellurium alloy in the glassy and crystalline states have been measured and analyzed in the frequency range 20–400 cm-1 at room temperature. The absorption in this range is due to the phonon modes of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::90392a11e51ad8110515dcecb468d425
https://zenodo.org/record/822759
https://zenodo.org/record/822759
Publikováno v:
Technical Physics. 59:546-550
The measuring circuit with a voltage generator, which is traditionally used for studying electric properties of glasslike semiconductors, is compared with an alternative version using a current generator. The results obtained in the latter case refle
Publikováno v:
physica status solidi (b). 249:153-157
In annealed chalcogenide films, thinner than 1 µm, highly expressed photodarkening (PD) can be fully restored after prolonged illumination. It was supposed that this light annealing effect (LAE) results from the dual action of light, which provokes
Publikováno v:
Journal of Non-Crystalline Solids. 356:2850-2857
Annealing of the Ge39Ga2S59 virgin amorphous thin film leads to the blue shift of the optical band gap owing to an increase of the film network order and to a decrease in the refractive index associated with both the film thickness expansion and a de
Publikováno v:
Physica B: Condensed Matter. 405:3924-3928
The presence or absence of correlation between irreversible and reversible photo- and thermoinduced changes of optical band gap ( E g ) and refractive index ( n ) is analyzed in films (∼700 nm thick) from compositions of the Ge 2 S 3 –AsS 3 glass
Publikováno v:
Materials Chemistry and Physics. 119:315-318
The photoinduced irreversible effects in thermally evaporated amorphous GeS 2 films were investigated. The magnitude of the photobleaching induced by gap photons was found at around ≈13%. The photoinduced increase in the optical band gap and the in
Publikováno v:
Physica B: Condensed Matter
Physica B: Condensed Matter, Elsevier, 2006, 371 (2), pp.302-308. ⟨10.1016/j.physb.2005.10.133⟩
Physica B: Condensed Matter, Elsevier, 2006, 371 (2), pp.302-308. ⟨10.1016/j.physb.2005.10.133⟩
cited By 8; International audience; The electronic structure of GexAs40- xS60 glasses and amorphous films has been obtained by means of X-ray photoelectron spectroscopy. Core level peaks and valence band spectra in the dependence on the composition a
Publikováno v:
Solid State Communications. 134:349-353
Thermal conductivity, k , of Ge x As 40− x S 60 glasses has been measured between 4.5 and 300 K. A variation of k with the composition is found and dependences of its parameters on the mean coordination numbers are established. Analyses have been m