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pro vyhledávání: '"D. Arar"'
Akademický článek
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Publikováno v:
Optical Materials. 86:24-31
In this paper, a new Selenium (Se) solar cell design based on inserting dissimilar ultrathin metallic layers (MLs), (Au and Ti), is proposed. Analytical models of the proposed design are developed, where the analytical results are in agreement with t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8857d4eb64d762010f1feb206bebe121
https://doi.org/10.1016/j.optmat.2018.09.025
https://doi.org/10.1016/j.optmat.2018.09.025
Publikováno v:
Journal of Luminescence. 191:117-121
In this paper, a new metallic thin film engineering aspect is proposed to achieve superior absorption for TiO 2 /Metal/TiO 2 on Silicon substrate UV -based photodetectors ( PDs ). The overall device optical performance comparison with three dissimila
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c391f1368bb6497db01910a9fd4837d2
https://doi.org/10.1016/j.jlumin.2016.09.032
https://doi.org/10.1016/j.jlumin.2016.09.032
Akademický článek
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Publikováno v:
Materials Today: Proceedings. 4:6804-6813
Recently, the Junctionless Double Gate MOSFET with source/drain extensions has proved competitive performance measures due to the reduction of the series resistance between the metal contacts and source/drain regions. However, the precise modeling of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::011369fbc3108c3d1938cd3a6c486891
https://doi.org/10.1016/j.matpr.2017.07.007
https://doi.org/10.1016/j.matpr.2017.07.007
Publikováno v:
physica status solidi c. 13:151-155
The use of uniformly doped channel, source and drain regions presents the well-known problem of the high series resistance associated to the extensions, which degrades the electrical performance of the nanoscale multi-gate junctionless MOSFETs. There
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2939f065c440db1579d16a36fd19a10e
https://doi.org/10.1002/pssc.201510167
https://doi.org/10.1002/pssc.201510167
Publikováno v:
Materials Science in Semiconductor Processing. 42:264-267
Multi-Gate Junctionless MOSFETs are promising devices to overcome the undesired short channel effects for low cost nanoelectronic applications. However, the high series resistance associated to the source and drain extensions can arise as a serious p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e710697bacf013e8e6ba6344e464c007
https://doi.org/10.1016/j.mssp.2015.07.060
https://doi.org/10.1016/j.mssp.2015.07.060
Publikováno v:
physica status solidi c. 12:131-135
The SiGe-based alloy is considered as one of the most promising materials for reliable and high performance microelectronic devices. The use of a lower band-gap material in the channel region of the MOSFET, such as SiGe, is a potential candidate give
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::99829f15e88f7c012fb537cedc4ffa69
https://doi.org/10.1002/pssc.201400088
https://doi.org/10.1002/pssc.201400088
Publikováno v:
Advanced Materials Research. 856:188-192
To improve the electrical performance and reduce the fabrication cost of the solar cell, thin-film solar-cell concepts are widely explored. In this context, many studies have been carried out to study the impact of the thin thickness of the material
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb68f0c03531e2b440238cdc9c7fa2d9
https://doi.org/10.4028/www.scientific.net/amr.856.188
https://doi.org/10.4028/www.scientific.net/amr.856.188
Publikováno v:
physica status solidi c. 11:65-68
This paper is devoted to the presentation of a quantitative analysis of the Junctionless Gate All Around RADFET (JL GAA RADFET) dosimeter, where the numerical simulation has been carried out using the Atlas 3-D simulator. The impact of the total dose
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e0087e2b024041b52cac3508627e1bf
https://doi.org/10.1002/pssc.201300146
https://doi.org/10.1002/pssc.201300146