Zobrazeno 1 - 10 of 278 pro vyhledávání: '"D. Angermeier"'
1
Integrated morphologic and molecular analysis of Trichomonas vaginalis, Mycoplasma hominis, and human papillomavirus using cytologic smear preparations
Autor: Alexander Muckenhuber, M. Schmidmayr, I. Nikas, R. Götz, M. Bettstetter, D. Angermeier, U. Schenck, Alexander Hapfelmeier, V. Seifert-Klauss, Martin Mollenhauer, Gregor Weirich
Publikováno v: Parasitology Research. 117:1443-1451
Pathogenic microbes may colonize the female genital tract via sexual transmission and cause health issues like inflammation or malignancy, summarized as sexually transmitted disease (STD). A major representative of such pathogens is Trichomonas vagin
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3a1dba769f2341e8fdc0b62bc9d302c6
https://doi.org/10.1007/s00436-018-5829-3
Zobrazit plný text záznamu
2
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
5
Modeling and Analysis of the Silicon Epitaxial Growth with SiHCl3 in a Horizontal Rapid Thermal Chemical Vapor Deposition Reactor
Autor: Abdelilah Slaoui, D. Angermeier, J.C. Muller, R. Monna
Publikováno v: Journal of The Electrochemical Society. 144:3256-3261
The growth of epitaxial Si on (100)‐oriented Si wafers in a horizontal rapid thermal chemical vapor deposition (RTCVD) reactor has been investigated. Trichlorosilane was employed as a precursor diluted in carrier gas at 1 atm reactor pressure. The
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::cf6a9ba65d1c2a3efe4b9752af8fc4d5
https://doi.org/10.1149/1.1837993
Zobrazit plný text záznamu
6
Initial Growth Processes in the Epitaxy of Ge with GeH4 on Oxidized Si Substrates
Autor: Robert Triboulet, D. Ballutaud, R. Druihle, D. Angermeier, W.S. Kuhn, W. Gebhardt
Publikováno v: Journal of The Electrochemical Society. 144:694-697
The heteroepitaxial growth of Ge on (100) Si in a horizontal, atmospheric pressure metallorganic vapor-phase epitaxy reactor is reported using germane GeH{sub 4} (0.1% in H{sub 2}). A particularly crucial parameter for germanium deposition on silicon
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::20b3cb3b4c05cce3e7a639b7eebd5f1e
https://doi.org/10.1149/1.1837470
Zobrazit plný text záznamu
7
Akademický článek
High gestational leucine level dampens WDPCP/MAPK signaling to impair the EMT and migration of cardiac microvascular endothelial cells in congenital heart defects.
Autor: Hong, Wei1 (AUTHOR), You, Guozhou1 (AUTHOR), Luo, Zhongming1 (AUTHOR), Zhang, Mingxiang1 (AUTHOR), Chen, Jian1 (AUTHOR) chenjian7@kmmu.edu.cn
Publikováno v: Pulmonary Circulation. Oct2024, Vol. 14 Issue 4, p1-15. 15p.
Zobrazit plný text záznamu
9
ChemInform Abstract: Initial Growth Processes in the Epitaxy of Ge with GeH4 on Oxidized Si Substrates
Autor: W.S. Kuhn, W. Gebhardt, Robert Triboulet, D. Angermeier, D. Ballutaud, R. Druihle
Publikováno v: ChemInform. 28
The heteroepitaxial growth of Ge on (100) Si in a horizontal, atmospheric pressure metallorganic vapor-phase epitaxy reactor is reported using germane GeH{sub 4} (0.1% in H{sub 2}). A particularly crucial parameter for germanium deposition on silicon
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::78d1e678934b3e709725e767eb88daa6
https://doi.org/10.1002/chin.199722252
Zobrazit plný text záznamu
10
Akademický článek
Habitat use of anadromous and amphidromous sturgeons in North America: a systematic review.
Autor: Gilligan-Lunda, Erin K.1 erin.gilligan@oregonstate.edu, Duarte, Adam2, Peterson, James T.3
Publikováno v: Canadian Journal of Fisheries & Aquatic Sciences. 2024, Vol. 81 Issue 5, p508-524. 17p.
Zobrazit plný text záznamu

Vyhledávací nástroje:

Upřesnit hledání

Omezení vyhledávání
Plný text Recenzováno Digitální knihovna AV ČR
Zdroje