Zobrazeno 1 - 10
of 31
pro vyhledávání: '"D. A. Zakheim"'
Autor:
E. E. Zavarin, W. V. Lundin, A. F. Tsatsul’nikov, A. V. Sakharov, D. A. Zakheim, D. S. Arteev
Publikováno v:
Semiconductors. 53:1900-1903
The broadening of the spectral linewidth of the GaN/InGaN/GaN quantum wells caused by the random distribution of indium and gallium atoms in the cation sublattice was analyzed theoretically. The calculated values of the full width at half maximum of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::32e5731a73c3c1d2863d378ce47cc0bd
https://doi.org/10.1134/s1063782619140033
https://doi.org/10.1134/s1063782619140033
Autor:
I. A. Eliseyev, Alexander N. Smirnov, W. V. Lundin, V. Yu. Davydov, L.K. Markov, M. A. Yagovkina, A. F. Tsatsul’nikov, E.Yu. Lundina, E. E. Zavarin, D. A. Zakheim, Pavel N. Brunkov, A. V. Sakharov
Publikováno v:
Journal of Crystal Growth. 504:1-6
We investigated the growth of III-N/graphene heterostructures as a single process in a MOVPE reactor. Raman spectra revealed that graphene can be successfully deposited on sapphire substrate by propane pyrolysis if temperature exceeds 1060 °C and hy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ad3fa2e4b2fc2b52504d26f83f4dc55e
https://doi.org/10.1016/j.jcrysgro.2018.09.017
https://doi.org/10.1016/j.jcrysgro.2018.09.017
Autor:
S. O. Usov, D. A. Zakheim, W. V. Lundin, P. E. Sim, L. E. Velikovskiy, N. Y. Kurbanova, A. F. Tsatsul’nikov, M. A. Yagovkina, E. E. Zavarin, A. V. Sakharov, O. I. Demchenko
Publikováno v:
Semiconductors. 52:1843-1845
InAlN/AlN/GaN semiconductor heterostructures with a barrier thickness of 5–13 nm have been grown by metalorganic vapor phase epitaxy (MOVPE) on sapphire and SiC substrates. Optimization of GaN buffer and InAlN layers allows fabricating structures w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d14652e700aa26ae4bfae14657d86868
https://doi.org/10.1134/s1063782618140257
https://doi.org/10.1134/s1063782618140257
Autor:
A. V. Sakharov, A. F. Tsatsulnikov, O. I. Demchenko, W. V. Lundin, E. E. Zavarin, D. S. Arteev, D. A. Zakheim, P. E. Sim, L. E. Velikovskiy, M. A. Yagovkina, N E Kurbanova, I A Filippov
Publikováno v:
IOP Conference Series: Materials Science and Engineering. 1019:012071
High electron mobility transistors (HEMTs) technologies based on AlGaN/GaN and InAlN/GaN heterostructures have been developed. The research focused on influence of epitaxial growth conditions and buffer doping profiles on electrical properties HEMTs.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e0724dd8d18c9fa779240aab9219e4dc
https://doi.org/10.1088/1757-899x/1019/1/012071
https://doi.org/10.1088/1757-899x/1019/1/012071
Autor:
I. A. Eliseyev, A. E. Nikolaev, Alexander N. Smirnov, A. A. Lebedev, A. V. Zubov, A. V. Sakharov, A. F. Tsatsul’nikov, E. E. Zavarin, W. V. Lundin, V. Yu. Davydov, Vitalii V. Kozlovski, D. A. Zakheim, K. S. Davydovskaya
Publikováno v:
Journal of Physics: Conference Series. 1697:012073
Radiation hardness of different types of GaN based epitaxial structures which can be used as elements of electronic devices is studied by Hall effect,CV and IV measurements, as well as photoluminescence and Raman scattering. It is shown that proton i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7fbd76ac52c04a81000a8efb6d20f16c
https://doi.org/10.1088/1742-6596/1697/1/012073
https://doi.org/10.1088/1742-6596/1697/1/012073
Autor:
A. V. Sakharov, A. F. Tsatsulnikov, E. E. Zavarin, M. I. Gindina, D. A. Zakheim, Pavel N. Brunkov, W. V. Lundin, D. S. Arteev
Publikováno v:
Journal of Physics: Conference Series. 1697:012206
The effect of the Fe doping profile of the GaN buffer layer in the heterostructures for high-electron mobility transistors was studied experimentally and by computer simulation. The exponential Fe tail extending to the nominally undoped layers may gr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2aebcd852254f380c7450c2ecfea2b5a
https://doi.org/10.1088/1742-6596/1697/1/012206
https://doi.org/10.1088/1742-6596/1697/1/012206
Autor:
I. P. Smirnova, D. A. Zakheim, M. V. Kukushkin, S. I. Pavlov, A. S. Pavluchenko, L. K. Markov
Publikováno v:
Semiconductors. 50:984-988
A new method for fabricating transparent conducting coatings based on indium-tin oxide (ITO) with a controlled refractive index is proposed. This method implies the successive deposition of material by electron-beam evaporation and magnetron sputteri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d4ee258ea10bdfce79282879100055ab
https://doi.org/10.1134/s1063782616070150
https://doi.org/10.1134/s1063782616070150
Publikováno v:
Semiconductors. 49:972-975
Reflection from multilayer coatings serving as contacts in AlInGaN light-emitting diodes (LEDs) is calculated in terms of a model based on the transfer-matrix method. ITO/SiO2/Ag composites with an ITO film constituted by two layers with different re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fe992660e78181d59c6a0e4f974d2d4e
https://doi.org/10.1134/s1063782615070192
https://doi.org/10.1134/s1063782615070192
Autor:
L. K. Markov, D. A. Bauman, D. A. Zakheim, A. S. Pavluchenko, M. V. Kukushkin, O. V. Osipov, G. V. Itkinson, I. P. Smirnova
Publikováno v:
physica status solidi c. 12:381-384
In this paper, we report on the development and fabrication of high power LED chips based on AlGaInN. These chips are meant for flip-chip mounting and have novel contact pad topology utilizing two-level metallization with the intermediate dielectric
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::84587991ed0ef157ee67d5c1ee53e2e3
https://doi.org/10.1002/pssc.201400174
https://doi.org/10.1002/pssc.201400174