Zobrazeno 1 - 10
of 31
pro vyhledávání: '"D. A. Zakheim"'
Autor:
E. E. Zavarin, W. V. Lundin, A. F. Tsatsul’nikov, A. V. Sakharov, D. A. Zakheim, D. S. Arteev
Publikováno v:
Semiconductors. 53:1900-1903
The broadening of the spectral linewidth of the GaN/InGaN/GaN quantum wells caused by the random distribution of indium and gallium atoms in the cation sublattice was analyzed theoretically. The calculated values of the full width at half maximum of
Autor:
I. A. Eliseyev, Alexander N. Smirnov, W. V. Lundin, V. Yu. Davydov, L.K. Markov, M. A. Yagovkina, A. F. Tsatsul’nikov, E.Yu. Lundina, E. E. Zavarin, D. A. Zakheim, Pavel N. Brunkov, A. V. Sakharov
Publikováno v:
Journal of Crystal Growth. 504:1-6
We investigated the growth of III-N/graphene heterostructures as a single process in a MOVPE reactor. Raman spectra revealed that graphene can be successfully deposited on sapphire substrate by propane pyrolysis if temperature exceeds 1060 °C and hy
Autor:
S. O. Usov, D. A. Zakheim, W. V. Lundin, P. E. Sim, L. E. Velikovskiy, N. Y. Kurbanova, A. F. Tsatsul’nikov, M. A. Yagovkina, E. E. Zavarin, A. V. Sakharov, O. I. Demchenko
Publikováno v:
Semiconductors. 52:1843-1845
InAlN/AlN/GaN semiconductor heterostructures with a barrier thickness of 5–13 nm have been grown by metalorganic vapor phase epitaxy (MOVPE) on sapphire and SiC substrates. Optimization of GaN buffer and InAlN layers allows fabricating structures w
Autor:
A. V. Sakharov, A. F. Tsatsulnikov, O. I. Demchenko, W. V. Lundin, E. E. Zavarin, D. S. Arteev, D. A. Zakheim, P. E. Sim, L. E. Velikovskiy, M. A. Yagovkina, N E Kurbanova, I A Filippov
Publikováno v:
IOP Conference Series: Materials Science and Engineering. 1019:012071
High electron mobility transistors (HEMTs) technologies based on AlGaN/GaN and InAlN/GaN heterostructures have been developed. The research focused on influence of epitaxial growth conditions and buffer doping profiles on electrical properties HEMTs.
Autor:
A. V. Sakharov, A. F. Tsatsulnikov, E. E. Zavarin, M. I. Gindina, D. A. Zakheim, Pavel N. Brunkov, W. V. Lundin, D. S. Arteev
Publikováno v:
Journal of Physics: Conference Series. 1697:012206
The effect of the Fe doping profile of the GaN buffer layer in the heterostructures for high-electron mobility transistors was studied experimentally and by computer simulation. The exponential Fe tail extending to the nominally undoped layers may gr
Autor:
I. A. Eliseyev, A. E. Nikolaev, Alexander N. Smirnov, A. A. Lebedev, A. V. Zubov, A. V. Sakharov, A. F. Tsatsul’nikov, E. E. Zavarin, W. V. Lundin, V. Yu. Davydov, Vitalii V. Kozlovski, D. A. Zakheim, K. S. Davydovskaya
Publikováno v:
Journal of Physics: Conference Series. 1697:012073
Radiation hardness of different types of GaN based epitaxial structures which can be used as elements of electronic devices is studied by Hall effect,CV and IV measurements, as well as photoluminescence and Raman scattering. It is shown that proton i
Autor:
I. P. Smirnova, D. A. Zakheim, M. V. Kukushkin, S. I. Pavlov, A. S. Pavluchenko, L. K. Markov
Publikováno v:
Semiconductors. 50:984-988
A new method for fabricating transparent conducting coatings based on indium-tin oxide (ITO) with a controlled refractive index is proposed. This method implies the successive deposition of material by electron-beam evaporation and magnetron sputteri
Publikováno v:
Semiconductors. 49:972-975
Reflection from multilayer coatings serving as contacts in AlInGaN light-emitting diodes (LEDs) is calculated in terms of a model based on the transfer-matrix method. ITO/SiO2/Ag composites with an ITO film constituted by two layers with different re
Autor:
L. K. Markov, D. A. Bauman, D. A. Zakheim, A. S. Pavluchenko, M. V. Kukushkin, O. V. Osipov, G. V. Itkinson, I. P. Smirnova
Publikováno v:
physica status solidi c. 12:381-384
In this paper, we report on the development and fabrication of high power LED chips based on AlGaInN. These chips are meant for flip-chip mounting and have novel contact pad topology utilizing two-level metallization with the intermediate dielectric