Zobrazeno 1 - 10
of 28
pro vyhledávání: '"D. A. Yarkin"'
Publikováno v:
Oftalʹmologiâ, Vol 21, Iss 3, Pp 577-584 (2024)
Relevance. Dry eye syndrome is an important medical and social problem due to its high prevalence and impact on visual functions in human daily life. In cataract surgery, the result of the operation and the patient’s satisfaction directly depends o
Externí odkaz:
https://doaj.org/article/3dafadff47da476fa5a8af55e3b72b69
Publikováno v:
Офтальмохирургия, Vol 0, Iss 3, Pp 28-39 (2021)
Purpose. Analyze of the long-term results of treatment of patients with progressive keratoconus initial stages performed according to the developed algorithm. Material and methods. Clinical studies were carried out on the basis of a retrospective ana
Externí odkaz:
https://doaj.org/article/ce6361a3e6884f30ab65f08d89b6c88c
Autor:
A. B. Granovskiĭ, A. V. Korolev, A. F. Orlov, Yu. P. Sukhorukov, V. I. Zinenko, N. S. Perov, E. A. Gan’shina, V. V. Saraĭkin, Yu. A. Agafonov, D. G. Yarkin, A. V. Telegin
Publikováno v:
JETP Letters. 85:335-338
Manganese-implanted silicon plates of both n and p types have been obtained by implanting 195-keV manganese ions with doses from 1 × 1015 to 2 × 1016 cm−2. According to magnetic measurements by a vibrating sample magnetometer and a SQUID magnetom
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6c9f147c071f530e33748b3d52a11f9a
https://doi.org/10.1134/s0021364007070077
https://doi.org/10.1134/s0021364007070077
Autor:
D. G. Yarkin, S. O. Klimonsky, A.S. Konstantinova, Andrei V. Sapelkin, N. S. Perov, L. A. Balagurov, A. F. Orlov, S. P. Kobeleva
Publikováno v:
Journal of Physics: Condensed Matter. 18:10999-11005
The structure and magnetic properties of different titanium oxide films doped with magnetic impurities are investigated both in the as-deposited state and after thermal treatments in a vacuum. The samples were characterized by x-ray diffraction (XRD)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7fe6e581727debba71fc115af4ab526b
https://doi.org/10.1088/0953-8984/18/48/027
https://doi.org/10.1088/0953-8984/18/48/027
Publikováno v:
Electrochimica Acta. 51:2938-2941
The features of electrochemical formation process of porous silicon (PS) at the temperatures above the room temperature have been studied. It was found that besides electrochemical dissolution, chemical etching takes part in the formation process of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4c3b95bd2a0f479bcc44ac8258148a7a
https://doi.org/10.1016/j.electacta.2005.09.022
https://doi.org/10.1016/j.electacta.2005.09.022
Autor:
L. A. Balagurov, G V Liberova, E. A. Petrova, Andrei V. Sapelkin, B.A. Loginov, Bayram Unal, D. G. Yarkin, S Ya Andrushin
Publikováno v:
Semiconductor Science and Technology. 20:1217-1222
Porous silicon (PS) is an excellent material to be used as a sacrificial layer (SL) for the fabrication of membranes, bridges, cantilevers and other complicated micro-sensor structures. Major advantages of this material are its smooth surface and lar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0fdc0acad381cdae19bbfbaf3f458150
https://doi.org/10.1088/0268-1242/20/12/013
https://doi.org/10.1088/0268-1242/20/12/013
Autor:
E. A. Gan’shina, L. A. Balagurov, A. F. Orlov, D. G. Yarkin, S. P. Kobeleva, N. S. Perov, S. O. Klimonskii
Publikováno v:
Crystallography Reports. 50:686-689
The conditions and the mechanism of the formation of a ferromagnetic phase in a Ti1-x Co x O2-δ oxide semiconductor are studied. It is found that the ferromagnetism manifests itself at room temperature in the films of Co-doped TiO2-δ oxide deposite
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a2d4f1930e60c95b171e85aa03d82b5
https://doi.org/10.1134/1.1996746
https://doi.org/10.1134/1.1996746
Publikováno v:
Semiconductor Science and Technology. 19:1343-1347
Electrochemical dissolution (in hydrofluoric acid) of p-type polycrystalline silicon layers deposited on crystalline silicon substrates has been studied. Some properties of the porous silicon (PS) layers obtained are described. The dissolution occurs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::161992ca187791a51e42a1a7cae7544d
https://doi.org/10.1088/0268-1242/19/12/002
https://doi.org/10.1088/0268-1242/19/12/002
Publikováno v:
Semiconductor Science and Technology. 19:100-105
Metal/PS/c-Si structures with porous silicon (PS) layers of 55?75% porosity were fabricated on moderately doped p- and n-type c-Si substrates and were thermally oxidized at 400?960 ?C. We studied the effect of oxidation on the charge carrier transpor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2714b133ed7e650c24ef8de42a1096da
https://doi.org/10.1088/0268-1242/19/1/017
https://doi.org/10.1088/0268-1242/19/1/017
Autor:
V. S. Kasatochkin, E. A. Petrova, S. C. Bayliss, D. G. Yarkin, L. A. Balagurov, A. F. Orlov, S Ya Andrushin
Publikováno v:
Solid-State Electronics. 47:65-69
Photosensitive metal/PS/c-Si structures with oxidized and non-oxidized porous silicon (PS) layers were fabricated. The structures were made from moderately doped p-type c-Si substrates with dielectric windows and “stop” rings prepared using stand
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fbc0ac93c61de044ac102f3f8da9f776
https://doi.org/10.1016/s0038-1101(02)00308-8
https://doi.org/10.1016/s0038-1101(02)00308-8